scholarly journals The polylogarithm and the Lambert W functions in thermoelectrics

2011 ◽  
Vol 89 (11) ◽  
pp. 1171-1178 ◽  
Author(s):  
Muralikrishna Molli ◽  
K. Venkataramaniah ◽  
S.R. Valluri
Keyword(s):  
Functional Equations ◽  
Figure Of Merit ◽  
Chemical Potential ◽  
Complex Variables ◽  
Lambert W Function ◽  
Scattering Mechanism ◽  
Degenerate Semiconductor ◽  
Carrier Scattering ◽  
Electrical Conductivities ◽  
Extremum Conditions

In this work, we determine the conditions for the extremum of the figure of merit, θ2, in a degenerate semiconductor for thermoelectric (TE) applications. We study the variation of the function θ2 with respect to the reduced chemical potential μ* using relations involving polylogarithms of both integral and nonintegral orders. We present the relevant equations for the thermopower, thermal, and electrical conductivities that result in optimizing θ2 and obtaining the extremum equations. We discuss the different cases that arise for various values of r, which depends on the type of carrier scattering mechanism present in the semiconductor. We also present the important extremum conditions for θ2 obtained by extremizing the TE power factor and the thermal conductivity separately. In this case, simple functional equations, which lead to solutions in terms of the Lambert W function, result. We also present some solutions for the zeros of the polylogarithms. Our analysis allows for the possibility of considering the reduced chemical potential and the index r of the polylogarithm as complex variables.

Tuning the carrier scattering mechanism to effectively improve the thermoelectric properties

2017 ◽  
Vol 10 (3) ◽  
pp. 799-807 ◽  
Author(s):  
Jing Shuai ◽  
Jun Mao ◽  
Shaowei Song ◽  
Qing Zhu ◽  
Jifeng Sun ◽  
...  
Keyword(s):  
Thermoelectric Power ◽  
Power Density ◽  
Output Power ◽  
Power Factor ◽  
Figure Of Merit ◽  
Scattering Mechanism ◽  
Thermoelectric Power Factor ◽  
Carrier Scattering ◽  
High Figure ◽  
Large Output

A high thermoelectric power factor not only enables a potentially high figure of merit ZT but also leads to a large output power density, and hence it is pivotal to find an effective route to improve the power factor.

scholarly journals Mechanosynthesis and Thermoelectric Properties of Fe, Zn, and Cd-Doped P-Type Tetrahedrite: Cu12-xMxSb4S13

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3448
Author(s):  
Francisco Arturo López Cota ◽  
José Alonso Díaz-Guillén ◽  
Oscar Juan Dura ◽  
Marco Antonio López de la Torre ◽  
Joelis Rodríguez-Hernández ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Powder Processing ◽  
High Energy ◽  
Secondary Phases ◽  
Ambient Conditions ◽  
Cadmium Sulfate ◽  
Electrical Conductivities ◽  
Compositional Changes ◽  
P Type

This contribution deals with the mechanochemical synthesis, characterization, and thermoelectric properties of tetrahedrite-based materials, Cu12-xMxSb4S13 (M = Fe2+, Zn2+, Cd2+; x = 0, 1.5, 2). High-energy mechanical milling allows obtaining pristine and substituted tetrahedrites, after short milling under ambient conditions, of stoichiometric mixtures of the corresponding commercially available binary sulfides, i.e., Cu2S, CuS, Sb2S3, and MS (M = Fe2+, Zn2+, Cd2+). All the target materials but those containing Cd were obtained as single-phase products; some admixture of a hydrated cadmium sulfate was also identified by XRD as a by-product when synthesizing Cu10Cd2Sb4S13. The as-obtained products were thermally stable when firing in argon up to a temperature of 350–400 °C. Overall, the substitution of Cu(II) by Fe(II), Zn(II), or Cd(II) reduces tetrahedrites’ thermal and electrical conductivities but increases the Seebeck coefficient. Unfortunately, the values of the thermoelectric figure of merit obtained in this study are in general lower than those found in the literature for similar samples obtained by other powder processing methods; slight compositional changes, undetected secondary phases, and/or deficient sintering might account for some of these discrepancies.

An extraction method of channel resistance for analysis of carrier scattering mechanism in SiC trench MOSFETs

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGD04
Author(s):  
Katsuhiro Kutsuki ◽  
Eiji Kagoshima ◽  
Toru Onishi ◽  
Jun Saito ◽  
Kensaku Yamamoto ◽  
...  
Keyword(s):  
Extraction Method ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Channel Resistance

Tellurium doped n-type Zintl Zr3Ni3Sb4 thermoelectric materials: Balance between carrier-scattering mechanism and bipolar effect

2017 ◽  
Vol 2 ◽  
pp. 54-61 ◽  
Author(s):  
Zihang Liu ◽  
Jun Mao ◽  
Shengyuan Peng ◽  
Binqiang Zhou ◽  
Weihong Gao ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Scattering Mechanism ◽  
Carrier Scattering ◽  
Materials Balance

Transport Properties of Thermoelectric Nanocomposites

2009 ◽  
Vol 1166 ◽  
Author(s):  
Lilia M Woods ◽  
Adian Popescu ◽  
Joshua Martin ◽  
George S. Nolas
Keyword(s):  
Experimental Data ◽  
Transport Process ◽  
Scattering Mechanism ◽  
Optimum Regime ◽  
Thermoelectric Transport ◽  
Potential Barriers ◽  
Barrier Heights ◽  
Carrier Scattering ◽  
Key Factor

AbstractWe present a theoretical model for carrier conductivity and Seebeck coefficient of thermoelectric materials composed of nanogranular regions. The model is used to successfully describe experimental data for chalcogenide PbTe nanocomposites. We also present similar calculations for skutterudite CoSb3 nanocomposites. The carrier scattering mechanism is considered explicitly and it is determined that it is a key factor in the thermoelectric transport process. The grain interfaces are described as potential barriers. We investigate theoretically the role of the barrier heights, widths, and distances between the barriers to obtain an optimum regime for the composites thermoelectric characetristics.

scholarly journals Thermoelectric Properties of Sr1-3x/2Lax/2Smx/2TiO3-δ (0.05 ≤ x ≤ 0.30) Ceramics

2021 ◽  
Author(s):  
Adindu C. Iyasara
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Ceramic Powders ◽  
Thermoelectric Figure ◽  
Seebeck Coefficients ◽  
Reducing Gas ◽  
Maximum Value ◽  
Heat Treated ◽  
Electrical Conductivities ◽  
Sintering Processes

Abstract Influence of strongly reducing processing atmosphere on Sr-vacancy Sr1-3x/2Lax/2Smx/2TiO3-δ (x = 0.05, 0.10, 0.15, 0.20, 0.30) ceramics was investigated. The ceramic powders were prepared by the solid-state reaction (SSR) method, and heat treated in 5 % H2/N2 reducing gas at 1573 K for 6 h and 1773 K for 8 h for calcination and sintering processes, respectively. Thermoelectric properties of Sr1-3x/2Lax/2Smx/2TiO3-δ ceramics were evaluated from 573 to 973 K. Their electrical conductivities increased with carrier concentration and also decreased with temperature, indicating metallic behaviour. The Seebeck coefficients showed n-type behaviour and increased with temperature. Additionally, the total thermal conductivities exhibited low values, with a minimum value, 2.67 W/m. K for x = 0.20 ceramics at 973 K. A maximum thermoelectric figure of merit, ZT = 0.30 at 973 K was reached for Sr0.7La0.1Sm0.1TiO3-δ ceramics, which is 20 % higher than the maximum value reported previously for La-Sm electron doped SrTiO3 ceramics.

Enhanced thermoelectric performance through carrier scattering at heterojunction potentials in BiSbTe based composites with Cu3SbSe4 nanoinclusions

2015 ◽  
Vol 3 (27) ◽  
pp. 7045-7052 ◽  
Author(s):  
Yuanyue Li ◽  
Di Li ◽  
Xiaoying Qin ◽  
Xiuhui Yang ◽  
Yongfei Liu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Power Factor ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Carrier Scattering ◽  
Interface Scattering

Owing to enhanced power factor and reduced lattice thermal conductivity through interface scattering, a largest thermoelectric figure of merit ZT = 1.61 is achieved at 467 K for BiSbTe based composite with Cu3SbSe4 nanoinclusions.

scholarly journals Spectrometer-Free Graphene Plasmonics Based Refractive Index Sensor

Sensors ◽  
2020 ◽  
Vol 20 (8) ◽  
pp. 2347 ◽  
Author(s):  
Li Zhang ◽  
Mohamed Farhat ◽  
Khaled Nabil Salama
Keyword(s):  
Refractive Index ◽  
Figure Of Merit ◽  
Chemical Potential ◽  
Gas Sensing ◽  
Refractive Index Sensor ◽  
Mode Of Operation ◽  
Free Graphene ◽  
One Step ◽  
Terahertz Sensing ◽  
Electrical Mode

We propose a spectrometer-free refractive index sensor based on a graphene plasmonic structure. The spectrometer-free feature of the device is realized thanks to the dynamic tunability of graphene’s chemical potential, through electrostatic biasing. The proposed sensor exhibits a 1566 nm/RIU sensitivity, a 250.6 RIU−1 figure of merit in the optical mode of operation and a 713.2 meV/RIU sensitivity, a 246.8 RIU−1 figure of merit in the electrical mode of operation. This performance outlines the optimized operation of this spectrometer-free sensor that simplifies its design and can bring terahertz sensing one step closer to its practical realization, with promising applications in biosensing and/or gas sensing.

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