Diffusion of ion-implanted Boron and Silicon in Germanium

2004 ◽  
Vol 809 ◽  
Author(s):  
Suresh Uppal ◽  
A. F. W. Willoughby ◽  
J. M. Bonar ◽  
N. E. B. cowern ◽  
R. J. H. Morris ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Resolution ◽  
Diffusion Coefficients ◽  
Doping Concentration ◽  
Diffusion Mechanism ◽  
Concentration Profiles ◽  
Furnace Annealing ◽  
Temperature Range ◽  
Self Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusion of B and Si in Ge is studied using implantation doping. Concentration profiles after furnace annealing in the temperature range 800–900 °C were obtained using high resolution secondary ion mass spectroscopy (SIMS). Diffusion coefficients are calculated by fitting the annealed profiles. For B, we obtain diRusivity values which are two orders of magnitude slower than previously reported in literature. An activation energy of 4.65(±0.3) eV is calculated for B diffusion in Ge. The results suggest that diffusion mechanism other than vacancy should be considered for B diffusion in Ge. For Si diffusion in Ge, the diffusivity values calculated in the temperature range 750–875 °C are in agreement with previous work. The activation energy of 3.2(±0.3) eV for Si diffusion is closer to that for Ge self-diffusion which suggests that Si diffusion in Ge occurs via the same mechanism as in Ge self-diffusion.

Behaviour of Implanted Hydrogen in Gallium Phosphide Single Crystals

1988 ◽  
Vol 144 ◽  
Author(s):  
J. M. Zavada ◽  
R. G. Wilson ◽  
S. W. Novak ◽  
S. J. Pearton ◽  
A. R. Von Neida
Keyword(s):  
Mass Spectrometry ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Gallium Phosphide ◽  
Secondary Ion Mass Spectrometry ◽  
Furnace Annealing ◽  
Higher Temperature ◽  
Redistribution Of Hydrogen ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTIn this paper we report on the depth distributions of implanted hydrogen in GaP crystals and the subsequent changes produced by post- implantation furnace annealing. A sulfur doped n+ GaP wafer has been implanted with 333 keV protons to a fluence of 5E15/cm+2. A similar wafer was implanted with 350 keV deuterons to the same fluence. Portions of each wafer have been furnace annealed at temperatures up to 500°C. The implanted hydrogen and the dopant S atoms were then depth profiled using secondary ion mass spectrometry (SIMS). The measurements show that the redistribution of hydrogen begins with annealing at about 300°C and proceeds both towards the surface and deeper into the substrate. The overall behavior is similar to that found previously for hydrogen in GaAs. However, in GaP crystals this redistribution begins at a higher temperature and proceeds more slowly in the implanted region. Based on the SIMS profiles, diffusion coefficients for hydrogen migrating into substrate are obtained.

Te Induced AlAs/GaAs Superlattice Mixing

1988 ◽  
Vol 126 ◽  
Author(s):  
P. Mel ◽  
S. A. Schwarz ◽  
T. Venkatesan ◽  
C. L. Schwartz ◽  
E. Colas
Keyword(s):  
Mass Spectrometry ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Temperature Range ◽  
The Relationship ◽  
Secondary Ion

ABSTRACTTe enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.

scholarly journals Self Diffusion in Compressed Fluid CF3Brand CF3Cl

1989 ◽  
Vol 44 (12) ◽  
pp. 1210-1214 ◽  
Author(s):  
M. Has ◽  
H.-D. Lüdemann
Keyword(s):  
Diffusion Coefficients ◽  
Sphere Model ◽  
Temperature Range ◽  
Self Diffusion ◽  
Compressed Fluid

Abstract Self diffusion coefficients of CF3Br and CF3Cl are given for the temperature range 140 - 430 K at pressures up to 200 MPa. The are analysed by the interacting sphere model.

Diffusion in Co-Ni System Studied by Multifoil Technique

2011 ◽  
Vol 312-315 ◽  
pp. 466-471 ◽  
Author(s):  
V.D. Divya ◽  
U. Ramamurty ◽  
Aloke Paul
Keyword(s):  
Activation Energy ◽  
Binary System ◽  
Diffusion Couple ◽  
Diffusion Coefficients ◽  
Impurity Diffusion ◽  
Intrinsic Diffusion ◽  
Exponential Factor ◽  
Temperature Range

Diffusion couple experiments were performed in the Co-Ni binary system for determining inter-, impurity- and intrinsic-diffusion coefficients in the temperature range of 1050 - 1250°C. The activation energy and pre-exponential factor estimated for interdiffusion do not vary significantly with composition. The activation energy calculated for impurity diffusion experiments shows is higher than . Intrinsic diffusion coefficients estimated from the multifoil experiment show that Ni is the fastest diffusing species in this system.

Diffusion of Boron in Silicon and Silicon-Germanium in the Presence of Carbon

2005 ◽  
Vol 237-240 ◽  
pp. 998-1003
Author(s):  
Mudith S.A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Peter Ashburn ◽  
Arthur F.W. Willoughby
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficients ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Coated Surfaces ◽  
Secondary Ion ◽  
Strained Sige

Boron diffusion in Si and strained SiGe with and without C was studied. Using gassource molecular beam epitaxy (MBE), B containing epitaxial layers of: (i) Si, (ii) Si containing 0.1% C, (iii) SiGe with 11% Ge and (iv) SiGe with 11% Ge and with a 0.1% C, were grown on substrates. These samples were then rapid thermal annealed (RTA) at 940, 1000 and 1050°C in an O2 ambient. Self-interstitial-, vacancy- and non-injection conditions were achieved by annealing bare, Si3N4- and Si3N4+SiO2-coated surfaces, respectively. Concentration profiles of B, Ge and C were obtained using Secondary-Ion Mass Spectrometry (SIMS). Diffusion coefficients of B in each type of matrix were extracted by computer simulation. We find that B diffusivity is reduced by both Ge and C. The suppression due to C is much larger. In all materials, a substantial enhancement of B diffusion was observed due to self-interstitial injection compared to non-injection conditions. These results indicate that B diffusion in all four types of layers is mediated primarily by interstitialcy type defects.

Self- and Impurity Diffusion in γ-TiAl Single Crystals

2006 ◽  
Vol 258-260 ◽  
pp. 259-269
Author(s):  
Hideo Nakajima ◽  
Y. Nose ◽  
Teruyuki Ikeda
Keyword(s):  
Activation Energy ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Ion Beam ◽  
Implantation Technique ◽  
Diffusion Anisotropy ◽  
Opposite Trend ◽  
Ordered Alloys ◽  
Predominant Process ◽  
Secondary Ion

The diffusion coefficients of 44Ti, 63Ni and 59Fe in γ-TiAl single crystals have been measured by ion-beam sputter-sectioning technique, while those of In have been measured using ion implantation technique and secondary ion mass spectroscopy (SIMS) in order to clarify the diffusion anisotropy: the diffusion perpendicular and parallel to the [001] axis. The diffusion of Ti and In perpendicular to the [001] axis is faster than that parallel to the [001] axis. However, the diffusion anisotropies of Fe and Ni show opposite trend to those of Ti and In, namely the diffusion parallel to the [001] axis is faster than that perpendicular to the axis. The predominant process of diffusion perpendicular to the [001] axis has been discussed from a viewpoint of activation energy using the expression of the diffusion coefficients in L10-ordered alloys.

Dislocation-enhanced diffusion in silver single crystals

1970 ◽  
Vol 48 (13) ◽  
pp. 1548-1552 ◽  
Author(s):  
C. T. Lai ◽  
H. M. Morrison
Keyword(s):  
Crystal Lattice ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Enhanced Diffusion ◽  
Temperature Range ◽  
Self Diffusion

An electrolytic sectioning technique has been used to measure self-diffusion coefficients in silver single crystals in the temperature range 300–800 °C. The results are analyzed in terms of diffusion through the crystal lattice, enhanced by diffusion along dislocations.

Hot Deformation Behavior and Microstructure Evolution of Ti-6.5Al-1.5Zr-3.5Mo-0.3Si with an Equiaxed α+β Starting Structure

2007 ◽  
Vol 546-549 ◽  
pp. 1383-1388 ◽  
Author(s):  
Hui Qin Chen ◽  
Hao Zhuan Lin ◽  
L. Guo ◽  
Chun Xiao Cao
Keyword(s):  
Activation Energy ◽  
Apparent Activation Energy ◽  
Phase Field ◽  
Hot Deformation ◽  
Deformation Behavior ◽  
Hot Deformation Behavior ◽  
Temperature Range ◽  
Self Diffusion ◽  
Β Phase ◽  
Plastic Deformation Behavior

The hot deformation behavior of TC11 with an equiaxed α+β pre-form microstructure was investigated by hot compression tests in the temperature range 800°C–1090°C and strain rate range 1×10-310s-1. Several approaches have been used in this investigation, which include analysis of shapes of stress–strain curves, kinetic analysis and microstructure observation. The experimented results showed that, (1) In the β phase field, the alloy exhibits dynamic re-crystallization. The apparent activation energy in this domain is estimated to be 183kJ/ mol, which is close to that for self-diffusion in β. The re-crystallized grain size may be governed by competing of diffusion and dynamic re-crystallization rate at deforming conditions. (2) In the α+β phase field, the alloy exhibits super-plastic deformation behavior at 0.001-0.01s-1 and 980°C -850°C, and the apparent activation energy estimated in this domain is about 600 kJ/mol, which is much higher than that for self-diffusion in α-titanium due to β volume fraction is not constant over the test temperature range.

First Study of Iron Self-Diffusion in Fe2O3 Single Crystals by SIMS

2005 ◽  
Vol 237-240 ◽  
pp. 277-281 ◽  
Author(s):  
Antônio Claret Soares Sabioni ◽  
Antônio Márcio J.M. Daniel ◽  
W.A.A. Macedo ◽  
M.D. Martins ◽  
Anne Marie Huntz ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Stable Isotope ◽  
Single Crystals ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Reliable Data ◽  
Oxygen Atmosphere ◽  
Self Diffusion ◽  
Secondary Ion

Iron bulk self-diffusion coefficients were measured in Fe2O3 single crystals using an original methodology based on the utilization of 57Fe stable isotope as iron tracer and depth profiling by secondary ion mass spectrometry (SIMS). The iron self-diffusion coefficients measured along c-axis direction, between 900 and 1100o C, in oxygen atmosphere, can be described by the following Arrhenius relationship: D(cm2/s)= 5.2x106 exp [-510 (kJ/mol)/RT], and are similar to reliable data available in the literature, obtained by means of radioactive techniques.

Self-Diffusion in Gold

1971 ◽  
Vol 49 (21) ◽  
pp. 2704-2709 ◽  
Author(s):  
H. M. Morrison ◽  
Virginia L. S. Yuen
Keyword(s):  
High Temperature ◽  
Diffusion Coefficients ◽  
Temperature Behavior ◽  
Enhanced Diffusion ◽  
Temperature Range ◽  
High Temperature Behavior ◽  
Self Diffusion ◽  
Lower Temperature

An electrolytic sectioning technique has been used to measure self-diffusion coefficients for gold in the temperature range 360 to 740 °C. At 740 °C our value agrees with previous work at this temperature, while the lower temperature values are larger than predicted by extrapolation of the well-established high-temperature behavior. The results are interpreted in terms of dislocation enhanced diffusion.

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