scholarly journals Coded masks for imaging of neutrino events

2021 ◽  
Vol 81 (11) ◽  
Author(s):  
M. Andreotti ◽  
P. Bernardini ◽  
A. Bersani ◽  
S. Bertolucci ◽  
S. Biagi ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Liquid Argon ◽  
Light Signal ◽  
Scintillation Light ◽  
Photon Detectors ◽  
Photon Detection ◽  
Potential Applications ◽  
Photon Detection Efficiency ◽  
New Generation

AbstractThe capture of scintillation light emitted by liquid Argon and Xenon under molecular excitations by charged particles is still a challenging task. Here we present a first attempt to design a device able to have a sufficiently high photon detection efficiency, in order to reconstruct the path of ionizing particles. The study is based on the use of masks to encode the light signal combined with single-photon detectors, showing the capability to detect tracks over focal distances of about tens of centimeters. From numerical simulations it emerges that it is possible to successfully decode and recognize signals, even of rather complex topology, with a relatively limited number of acquisition channels. Thus, the main aim is to elucidate a proof of principle of a technology developed in very different contexts, but which has potential applications in liquid argon detectors that require a fast reading. The findings support us to think that such innovative technique could be very fruitful in a new generation of detectors devoted to neutrino physics.

scholarly journals Towards THGEM UV-photon detectors for RICH: on single-photon detection efficiency in Ne/CH4and Ne/CF4

2010 ◽  
Vol 5 (01) ◽  
pp. P01002-P01002 ◽  
Author(s):  
C D R Azevedo ◽  
M Cortesi ◽  
A V Lyashenko ◽  
A Breskin ◽  
R Chechik ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detectors ◽  
Photon Detection ◽  
Photon Detection Efficiency

Advances in Silicon Carbide Single Photon Detectors

2011 ◽  
Vol 679-680 ◽  
pp. 543-546
Author(s):  
Alexey V. Vert ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Optical Filter ◽  
Cost Effective ◽  
Single Photon Detection ◽  
Photon Detectors ◽  
Photon Detection ◽  
Solar Blind ◽  
Single Photon Detectors ◽  
Photon Detection Efficiency

We present overview of achieved results on 4H-SiC avalanche photodiodes (APDs) and arrays. Cost-effective solar-blind optical filter allows achieving high solar photon rejection ratio of more than 106 in combination with more than 40% single photon detection efficiency at 266nm. Three iterations of devices were fabricated and evaluated to compare their optical and electrical properties. Dark count rates and single photon detection efficiencies are the main characteristics compared for these three iterations of device designs.

An efficient performance evaluation modeling tool for SNSPD used in QKD systems

2019 ◽  
Vol 17 (07) ◽  
pp. 1950059
Author(s):  
Adil F. Mushatet ◽  
Shelan K. Tawfeeq
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detectors ◽  
Photon Detection ◽  
Efficient Performance ◽  
Single Photon Detectors ◽  
Dark Counts ◽  
Photon Detection Efficiency ◽  
The Impact

Single-photon detection concept is the most crucial and often difficult factor to determine the performance of quantum key distribution (QKD) systems. One solution to facilitate understanding this concept is to create a virtual environment for modeling, analyzing, and investigating the performance of single photon detectors. In this paper, a simulator for superconducting single photon detectors with time domain visualizer and configurable parameters is presented. The widely used ID281SNSPD in the QKD area was theoretically modeled in terms of pulse analysis, the impact of biasing current and the temperature on the dark counts rate and single photon-detection efficiency and influence of the number of photons per pulse on the single photon-detection efficiency. The simulated results were in good agreement with the theoretical results and the simulator demonstrated its adaptability.

Design of High Speed and High Efficiency Single-Photon Detectors Using Silicon Avalanche Photodiodes

2016 ◽  
Vol 705 ◽  
pp. 168-173
Author(s):  
Nan Zhou ◽  
Miao Qing Zhuang ◽  
Hao Liang
Keyword(s):  
High Speed ◽  
High Efficiency ◽  
Detection Efficiency ◽  
Single Photon ◽  
Avalanche Photodiodes ◽  
Single Photon Detection ◽  
Photon Detectors ◽  
Photon Detection ◽  
Single Photon Detectors ◽  
Photon Detection Efficiency

Avalanche photodiodes are crucial materials for single-photon detection. Single-photon detectors are indispensable components for optical experiments and applications such as quantum information processing and quantum communications, both of which demand high single-photon detection efficiency. The authors have first developed a silicon single-photon avalanche detector in near infrared spectrum with 1 MHz square wave gating and tested its performance. Then we have also designed a high-speed and high-efficiency silicon single-photon detection system with 152 MHz sine wave gating and improved its single-photon detection efficiency to 77.48%.

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

High photon detection efficiency single photon avalanche diode in 0.18 μm standard CMOS process

2017 ◽  
Vol 31 (17) ◽  
pp. 1750193 ◽  
Author(s):  
Wei Wang ◽  
Xiaoyuan Bao ◽  
Li Chen ◽  
Ting Chen ◽  
Guanyu Wang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Bias Voltage ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Process ◽  
Guard Ring ◽  
Reverse Bias Voltage ◽  
Photon Detection ◽  
Standard Cmos Process ◽  
Photon Detection Efficiency

This paper proposed a single photon avalanche diodes (SPADs) designed with 0.18 [Formula: see text] standard CMOS process. One of the major challenges in CMOS SPADs is how to raise the low photon detection efficiency (PDE). In this paper, the device structure and process parameters of the CMOS SPAD are optimized so as to improve PDE properties which have been investigated in detail. The CMOS SPADs are designed in p+/n-well/deep n-well (DNW) structure with the p-sub and the p-well guard ring (GR). The simulation results show that with the p-well GR, the quantum efficiency (QE) is about 80% with the breakdown voltage of 12.7 V, the unit responsivity is as high as 0.38 A/W and the PDE of 51% and 53% is obtained when the excess bias is at 1 V and 2 V, respectively. The dark count rate (DCR) is 6.2 kHz when bias voltage is 14 V. With the p-sub GR, the breakdown voltage is 13 V, the unit responsivity is up to 0.26 A/W, the QE is 58%, the PDE is 33% and 37% at excess bias of 1 V and 2 V, respectively. The DCR is 3.4 kHz at reverse bias voltage of 14 V.

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