BULK NONPARABOLIC EFFECTIVE MASS APPLIED TO CALCULATION OF LANDAU LEVEL ENERGY AND COMPARISON WITH CYCLOTRON RESONANCE IN InGaAs/InAlAs QUANTUM WELLS

2004 ◽  
Vol 18 (27n29) ◽  
pp. 3835-3838
Author(s):  
NOBUO KOTERA ◽  
KOICHI TANAKA ◽  
NOBORU MIURA
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Electron Energy ◽  
Landau Level ◽  
Cyclotron Resonance ◽  
Energy Calculation ◽  
Level Energy ◽  
Band Nonparabolicity

Observation of band nonparabolicity is difficult because the electron energy in conduction band cannot be controlled widely. Using quantization energy in quantum well (QW) where the eigen energy is changed by QW thickness, nonparabolic effective mass inside a single QW of InGaAs was determined recently, up to 0.5 eV above bandedge. The dependence of effective mass on energy was analyzed and applied to calculate Landau level energy. Calculation fit well with cyclotron resonance experiments. Coupling between skew and normal cyclotron resonance was identified by this analysis.

Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields

1997 ◽  
Vol 11 (09) ◽  
pp. 1195-1207
Author(s):  
E. K. Takahashi ◽  
A. T. Lino ◽  
L. M. R. Scolfaro
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
Magnetic Fields ◽  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Electron Energy ◽  
Self Consistent ◽  
Plane Direction ◽  
The Magnetic Field

Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Contactless electroreflectance of GaNyAs1−y/GaAs multi quantum wells: The conduction band offset and electron effective mass issues

2006 ◽  
Vol 138 (7) ◽  
pp. 365-370 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Motyka ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
J.A. Gupta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Band Offset ◽  
Electron Effective Mass ◽  
Conduction Band Offset

Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells

2002 ◽  
Vol 13 (2-4) ◽  
pp. 1078-1081 ◽  
Author(s):  
C. Skierbiszewski ◽  
S.P. Łepkowski ◽  
P. Perlin ◽  
T. Suski ◽  
W. Jantsch ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Band Dispersion

scholarly journals Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
Yasuhisa Omura
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Threshold Voltage ◽  
Mathematical Formulation ◽  
Electron System ◽  
Band Model ◽  
Dimensional Electron ◽  
Dimensional Electron System ◽  
Low Dimensional ◽  
Band Nonparabolicity

This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2layer. The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers. To examine the feasibility of our consideration, the model is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results. This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition.

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