ATOMIC FORCE MICROSCOPY AND XRD ANALYSIS OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2006 ◽  
Vol 20 (02) ◽  
pp. 217-231 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Thickness of the films varied between 20 nm and 72.8 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. Three-dimension and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching 41.9 nm when the film size reaches 60 nm. Grain size was calculated from the information provided by the XRD spectrum and averaging method. We could not find any sequential variation in the grain size with the growth rate.

SURFACE CHARACTERIZATION AND GRAIN SIZE CALCULATION OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2005 ◽  
Vol 12 (05n06) ◽  
pp. 759-766 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). Thickness of the films varied between 20 nm and 60 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. 3D and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Grain sizes were calculated using the XRD results and Scherer's formula. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching a maximum value of 41.9 nm when the film size reaches 60 nm. We could not find any sequential variation in the grain size with the growth rate.

scholarly journals D.C conductivity of In2O3: SnO2 thin films and manufacturing of gas sensor

2018 ◽  
Vol 16 (37) ◽  
pp. 32-45
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
Operating Temperature ◽  
Degree Of Crystallinity ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
Sno2 Thin Films ◽  
Doping Ratio

Compounds were prepared from In2O3 doped SnO2 with different doping ratio by mixing and sintering at 1000oC. Pulsed Laser Deposition PLD was used to deposit thin films of different doping ratio In2O3: SnO2 (0, 1, 3, 5, 7 and 9 % wt.) on glass and p-type wafer Si(111) substrates at ambient temperature under vacuum of 10-3 bar thickness of ~100nm. X-ray diffraction and atomic force microscopy were used to examine the structural type, grain size and morphology of the prepared thin films. The results show the structures of thin films was also polycrystalline, and the predominate peaks are identical with standard cards ITO. On the other side the prepared thin films declared a reduction of degree of crystallinity with the increase of doping ratio. Atomic Force Microscopy (AFM) measurements show the average grain size exhibit to change in non-systematic manner with the increase of doping ratio with tin oxide. The average grain size increases at doping ratios 1, 5 and 7 % from 52.48 to 79.12, 87.57, and 105.59 nm respectively and decreases at residual doping ratio. The average surface roughness increases from 0.458 to 26.8 nm with the increase of doping ratio. The gas sensing measurements of In2O3:SnO2 thin films prepared on p-Si to NO2 gas showed good sensitivity and Maximum sensitivity (50) obtained for In2O3:SnO2 prepared on p-Si at operating temperature 573 K and doping ratio 7 % and 9 %. Maximum speed of response time (8 sec) at operating temperature 573 K and doping ratio 1 %.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Atomic force microscopy of slip lines in FeAl

1995 ◽  
Vol 10 (9) ◽  
pp. 2159-2161 ◽  
Author(s):  
J.H. Schneibel ◽  
L. Martínez
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Force Microscope ◽  
Room Temperature ◽  
Frequency Distributions ◽  
Slip Lines ◽  
Force Microscopy ◽  
Atomic Force ◽  
Shear Strains

Fe–40 at. % Al–0.1 at. % B specimens were polished flat, strained at room temperature, and examined in an atomic force microscope. The angles of height contours perpendicular to the slip lines were interpreted as shear strains and were statistically evaluated. The frequency distributions of these shear strains correlated well with the macroscopic strains. The maximum shear strains found were not much larger than the macroscopic strains. In particular, no steep slip steps corresponding to large local shears were found.

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