SURFACE CHARACTERIZATION AND GRAIN SIZE CALCULATION OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2005 ◽  
Vol 12 (05n06) ◽  
pp. 759-766 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). Thickness of the films varied between 20 nm and 60 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. 3D and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Grain sizes were calculated using the XRD results and Scherer's formula. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching a maximum value of 41.9 nm when the film size reaches 60 nm. We could not find any sequential variation in the grain size with the growth rate.

ATOMIC FORCE MICROSCOPY AND XRD ANALYSIS OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2006 ◽  
Vol 20 (02) ◽  
pp. 217-231 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Thickness of the films varied between 20 nm and 72.8 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. Three-dimension and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching 41.9 nm when the film size reaches 60 nm. Grain size was calculated from the information provided by the XRD spectrum and averaging method. We could not find any sequential variation in the grain size with the growth rate.

Stress-induced surface characterization by wavelet and fractal analysis in Ga-doped ZnO thin films

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3105-3110
Author(s):  
Chenlei Jing ◽  
Yang Hu ◽  
Wu Tang
Keyword(s):  
Plane Stress ◽  
Surface Characterization ◽  
Room Temperature ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Surface Profiles ◽  
Doped Zno ◽  
Two Parameters ◽  
Irregular Variation

ABSTRACTThe Ga-doped ZnO (GZO) were deposited by magnetron reactive sputtering on glass substrates at room temperature with different deposited times to obtain various thickness. The root-mean-square (RMS) roughness obtained from the atomic force microscopy (AFM) images is observed to shift linearly with the deposited time, the fractal geometry and multi-resolution signal decomposition (MRSD) based on wavelet transform were applied on the surface profiles and the results does not synchronously changes as the thickness, which is related to the profile’s frequency. The calculated compressive in-plane stress of highly c-axis oriented GZO films also shows an irregular variation as the increase of film thickness, what’s more, the in-plane stress and fractal dimension exhibit a polynomial relationship and the two parameters can be used for describing the surface morphology.

Effect of Copper Concentration on Characterization of Cu2Zn0.8Cd0.2SnS4 Pentrary Alloy Nanostructures

2015 ◽  
Vol 754-755 ◽  
pp. 1115-1119 ◽  
Author(s):  
A.S. Ibraheam ◽  
Y. Al-Douri ◽  
Uda Hashim
Keyword(s):  
Spin Coating ◽  
Copper Concentration ◽  
Sol Gel ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Average Grain Size ◽  
Alloy Nanostructures ◽  
Effect Of Copper

Cu2Zn0.8Cd0.2SnS4 pentrary alloy nanostructure were prepared and deposited on glass substrates with different copper concentrations ( 0.3, 0.5, 0.7 and 0.9 mol/L ) using Sol gel – spin coating method.morphological and analytical studies were investigated by Field Emission-Scanning Electron Microscope (FE-SEM), atomic force microscopy (AFM). It is found that the average grain size of Cu2Zn0.8Cd0.2SnS4 pentrary alloy nanostructure is 51.92 to 76.43 nm for the thin films prepared at 0.3, 0.5, 0.7 and 0.9 mol/L respectively .

Structural, morphology and electrical properties of layered copper selenide thin film

Open Physics ◽  
2009 ◽  
Vol 7 (2) ◽  
Author(s):  
J. Ying Chyi Liew ◽  
Zainal Talib ◽  
W. Mahmood ◽  
M. Yunus ◽  
Zulkarnain Zainal ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Surface Roughness ◽  
Grain Size ◽  
Copper Selenide ◽  
Layer By Layer ◽  
Structural Morphology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
Evaporation Technique

AbstractThin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.

Microstructural features and mechanical properties of 18 MeV He+ ions irradiated pure Zr

2016 ◽  
Vol 30 (32n33) ◽  
pp. 1650395
Author(s):  
Mohsin Rafique ◽  
San Chae ◽  
Yong-Soo Kim
Keyword(s):  
Grain Size ◽  
Irradiation Dose ◽  
Dose Range ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pure Zirconium ◽  
Higher Doses

Samples of pure zirconium (Zr) were irradiated by 18 MeV helium (He[Formula: see text]) ions in the dose range 0.00162–0.0324 dpa at 373 K by using Cyclotron accelerator. The atomic force microscopy (AFM) results indicated an increase in average surface roughness of Zr by increasing the irradiation dose. The AFM images revealed nucleation and growth of nano- and micro-size hillocks at lower doses (0.00162–0.00324 dpa), whereas formation of a volcano-like cavities and craters was observed within these hillocks by increasing the radiation dose from 0.00324 to 0.0324 dpa. The high-resolution X-ray diffraction (XRD) results showed a variation in the intensities and positions of the diffraction peaks after the irradiation. The transmission electron microscopy (TEM) results reported a significant decrease in the grain size after the He[Formula: see text] irradiation. The values of grain size, calculated using the TEM, were found to be in good agreement with the crystallite size calculated using the XRD analysis. The yield stress (YS) was increased by increasing the irradiation dose up to 0.0162 dpa, however, the YS exhibited a decreasing trend with a further increase of the dose. The changes in YS were elucidated by grain size reduction and localized heating at higher doses.

Autothermal Gelation Synthesis of Uniform Titania Nanoparticles

2010 ◽  
Vol 148-149 ◽  
pp. 1188-1191
Author(s):  
Xi Xin Wang ◽  
Jian Ling Zhao ◽  
Zhao Hui Meng ◽  
Jia Wei Yan
Keyword(s):  
Grain Size ◽  
Tio2 Nanoparticles ◽  
Anatase Phase ◽  
Xrd Analysis ◽  
Rutile Phase ◽  
Titania Nanoparticles ◽  
Gelation Process ◽  
Average Grain Size ◽  
Process Effects ◽  
20 Nm

Titania nanoparticles were successfully synthesized through an easily controlled and simple autothermal gelation process. Effects of H2O2 concentrations, solvent quantity and dissolving temperature were investigated in detail. DSC–TGA and XRD analysis showed that the synthesized TiO2 nanoparticles were in anatase phase at 400°C and in rutile phase at 650°C. TEM image indicated that the titania nanoparticles were uniform and approximately spherical, the average grain size of the product was about 20 nm.

scholarly journals Study of the Influence of Annealing Temperature on the Structural and Optical Properties of ZnTe Prepared by Vacuum Thermal Evaporation Technique

2018 ◽  
Vol 31 (1) ◽  
pp. 50
Author(s):  
Sarmad M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
High Smoothness ◽  
Evaporation Technique ◽  
20 Nm

   The ZnTe alloy was prepared as  deposited thin films on the glass substrates at a thickness of 400±20 nm using vacuum evaporation technique at pressure (1 × 10-5) mbar and room temperature. Then the thin films under vacuum (2 × 10-3 mbar) were annealing at (RT,100 and 300) °C for one hour. The structural properties were studied by using X-ray diffraction and AFM, the results show that the thin films had approached the single crystalline in the direction (111) as preferred orientation of the structure zinc-blende for cubic type, with small peaks of tellurium (Te) element for all prepared thin films. The calculated crystallite size (Cs) decreased with the increase in the annealing temperature, from (25) nm before the annealing to (21) nm after the annealing. The images of atomic force microscopy of all thin films appeared a homogenous structure and high smoothness through roughness values ​​that increased slightly from (1.4) nm to (3.4) nm. The optical properties of the ZnTe at (RT,100 and 300) °C were studied transmittance and absorbance spectrum as a function of the wavelength. The energy gap was found about (2.4) eV for the thin films before the annealing and increased slightly to (2.5) eV after annealing at 300 °C  

Properties of Hexagonal Wurtzite Mg0.33Zn0.67O Films on Quartz Glass Substrates

2011 ◽  
Vol 337 ◽  
pp. 612-615
Author(s):  
Quan Sheng Liu ◽  
Xi Yan Zhang ◽  
Xiao Chun Wang ◽  
Zhao Hui Bai ◽  
Neng Li Wang ◽  
...  
Keyword(s):  
Grain Size ◽  
Absorption Spectrum ◽  
Quartz Glass ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Xrd Analysis ◽  
Excitation Peak ◽  
Lattice Constants ◽  
Glass Substrates ◽  
Average Grain Size

Mg0.33Zn0.67Ofilms were prepared on quartz glass substrates by Sol-Gel method. Structures and optical properties of Mg0.33Zn0.67Ofilms were studied. The results of XRD analysis indicates that the Mg0.33Zn0.67Ofilm is hexagonal wurtzite structure and the lattice constants a and c are 0.3265nm and 0.5218 nm respectively. Lattice constants a and c of the Mg0.33Zn0.67O film increased because of the addition of Mg. The image of SEM shows that the Mg0.33Zn0.67O film is homogeneous and its average grain size is about 40nm. The absorption spectrum of the sample reveals that the absorption edge of Mg0.33Zn0.67O film located at 312.3nm and the corresponding forbidden band width is 3.97eV. is by three peaks ，which located at 383.9nm，442.6nm and 532.9nm respectively，constitute the luminescence spectrum of the film. The excitation peak located at 379.9nm.

Effect of Deposition Voltage on the Composition, Morphology and Optical Properties of ZnS Thin Films Prepared by Cathodic Electrodeposition

2010 ◽  
Vol 105-106 ◽  
pp. 348-350
Author(s):  
Hui Zhu ◽  
Jian Feng Huang ◽  
Li Yun Cao ◽  
Yan Wang ◽  
Xie Rong Zeng
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Zinc Sulphide ◽  
X Ray Diffraction ◽  
Cathodic Electrodeposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Voltage

Zinc sulphide (ZnS) thin films were deposited on the indium tin oxide (ITO) substrates by a novel, simple cathodic electrodeposition method under atmospheric pressure. These thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence spectrum (PL) at room temperature. The effects of deposition voltage on the phase composition, morphology and photoluminescence behavior of the thin films were investigated. XRD analysis shows that the deposited thin films is highly preferential growth along (200) orientation. Both AFM and XRD analyses indicate that the surface of the ZnS thin films is composed of uniform grains of around 50 nm in diameter. With the increase in the deposition voltages, the crystallization of the obtained thin films improves and the grain size of the ZnS thin films increases. Photoluminescence emission peaks are observed at at 475~490 nm and 500 ~530 nm at room temperature for an excitation of 210 nm.

Synthesis of Corrugated Structured N Type Pbs Thin Film

2012 ◽  
Vol 500 ◽  
pp. 118-122 ◽  
Author(s):  
E.I. Anila ◽  
K.J. Saji ◽  
U.S. Sajeev
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Xrd Analysis ◽  
Dip Coating ◽  
Pbs Nanoparticles ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Type Band ◽  
Corrugated Structure ◽  
Power Measurements

PbS thin films with corrugated structure were synthesized on glass substrates by dip coating. The surface of the films was found to be corrugated. XRD analysis confirmed the formation of crystalline PbS nanoparticles with average grain size 14nm. From thermo power measurements, the conductivity of the samples was found to be of n type. Band gap of the films was estimated as 1.7eV from absorption spectra.

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