Imaging the restatom of the Ge(111)-c (2 × 8) surface with noncontact atomic force microscopy at room temperature

2005 ◽  
Vol 16 (3) ◽  
pp. S68-S72 ◽  
Author(s):  
Masayuki Abe ◽  
Yoshiaki Sugimoto ◽  
Seizo Morita
Keyword(s):  
Atomic Force Microscopy ◽  
Room Temperature ◽  
Force Microscopy ◽  
Atomic Force

ATOMIC FORCE MICROSCOPY AND XRD ANALYSIS OF SILVER FILMS DEPOSITED BY THERMAL EVAPORATION

2006 ◽  
Vol 20 (02) ◽  
pp. 217-231 ◽  
Author(s):  
MUHAMMAD MAQBOOL ◽  
TAHIRZEB KHAN
Keyword(s):  
Atomic Force Microscopy ◽  
Grain Size ◽  
Surface Characterization ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Average Grain Size ◽  
20 Nm

Thin films of pure silver were deposited on glass substrate by thermal evaporation process at room temperature. Surface characterization of the films was performed using X-ray diffraction (XRD) and atomic force microscopy (AFM). Thickness of the films varied between 20 nm and 72.8 nm. XRD analysis provided a sharp peak at 38.75° from silver. These results indicated that the films deposited on glass substrates at room temperature are crystalline. Three-dimension and top view pictures of the films were obtained by AFM to study the grain size and its dependency on various factors. Average grain size increased with the thickness of the deposited films. A minimum grain size of 8 nm was obtained for 20 nm thick films, reaching 41.9 nm when the film size reaches 60 nm. Grain size was calculated from the information provided by the XRD spectrum and averaging method. We could not find any sequential variation in the grain size with the growth rate.

Atomic force microscopy of slip lines in FeAl

1995 ◽  
Vol 10 (9) ◽  
pp. 2159-2161 ◽  
Author(s):  
J.H. Schneibel ◽  
L. Martínez
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Force Microscope ◽  
Room Temperature ◽  
Frequency Distributions ◽  
Slip Lines ◽  
Force Microscopy ◽  
Atomic Force ◽  
Shear Strains

Fe–40 at. % Al–0.1 at. % B specimens were polished flat, strained at room temperature, and examined in an atomic force microscope. The angles of height contours perpendicular to the slip lines were interpreted as shear strains and were statistically evaluated. The frequency distributions of these shear strains correlated well with the macroscopic strains. The maximum shear strains found were not much larger than the macroscopic strains. In particular, no steep slip steps corresponding to large local shears were found.

Towards a Room Temperature Organic Spin Valve: Structural, Magnetic and Transport Properties of Fe3O4/PTCTE/Co Devices

2011 ◽  
Vol 1359 ◽  
Author(s):  
Mathieu Palosse ◽  
Elena Bedel-Pereira ◽  
François Olivié ◽  
Isabelle Séguy ◽  
Christina Villeneuve ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Current Distribution ◽  
Morphological Study ◽  
Room Temperature ◽  
Spin Valve ◽  
Vibrating Sample Magnetometer ◽  
Force Microscopy ◽  
Dc Sputtering ◽  
Ferromagnetic Electrodes ◽  
Atomic Force

ABSTRACTThis paper describes first steps in preparation of an organic spin valve based on a perylene derivative (PTCTE) sandwiched between magnetite (Fe3O4) and cobalt (Co) ferromagnetic electrodes. MgO(001)/Fe3O4/PTCTE (450 nm)/Co devices were prepared with different Co soft deposition methods: off-axis dc-sputtering or Joule evaporation. Vibrating Sample Magnetometer (VSM) studies of the Fe3O4/PTCTE/Co stacks evidence spin valve behavior with magnetically uncoupled electrodes. These results are correlated with a morphological study by atomic force microscopy (AFM) of each layer and tunneling AFM (TUNA) for the investigation of inhomogeneity of current distribution in the devices. Finally, macroscopic I-V characteristics performed on the same devices will be presented and compared with TUNA results.

scholarly journals Chemical structure imaging of a single molecule by atomic force microscopy at room temperature

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Kota Iwata ◽  
Shiro Yamazaki ◽  
Pingo Mutombo ◽  
Prokop Hapala ◽  
Martin Ondráček ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Single Molecule ◽  
Chemical Structure ◽  
Room Temperature ◽  
Force Microscopy ◽  
Atomic Force

AFM Study of Typical Fracture Surfaces in Room-Temperature Fracture of Sapphire

2009 ◽  
Vol 409 ◽  
pp. 113-122
Author(s):  
José M. López-Cepero ◽  
Sheldon M. Wiederhorn ◽  
António Ramirez de Arellano-López ◽  
Julian Martínez-Fernández
Keyword(s):  
Atomic Force Microscopy ◽  
Optical Microscopy ◽  
Special Interest ◽  
Room Temperature ◽  
Crystalline Orientation ◽  
Force Microscopy ◽  
Fracture Surfaces ◽  
Atomic Force ◽  
Temperature Fracture

Rhombohedral r-plane fracture surfaces in sapphire are analyzed by optical microscopy and by atomic force microscopy. Features of special interest include steps, lines and angles on the surface that appear to have crystallographic origins. A classification and description of these features is given over a scale ranging from hundreds of micrometers to tens of nanometers. Preferential directions in the surface are identified and related to the crystalline orientation of the sample; an attempt is made to identify the underlying phenomenology behind the appearance of each kind of feature.

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

2006 ◽  
Vol 527-529 ◽  
pp. 1265-1268 ◽  
Author(s):  
Jeffery B. Fedison ◽  
Chris S. Cowen ◽  
Jerome L. Garrett ◽  
E.T. Downey ◽  
James W. Kretchmer ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Room Temperature ◽  
Gate Oxide ◽  
Surface Roughening ◽  
Force Microscopy ◽  
Atomic Force ◽  
N Source ◽  
High Temperature Anneal ◽  
Blocking Voltage

Results of a 1200V 4H-SiC vertical DMOSFET based on ion implanted n+ source and pwell regions are reported. The implanted regions are activated by way of a high temperature anneal (1675°C for 30 min) during which the SiC surface is protected by a layer of graphite. Atomic force microscopy shows the graphite to effectively prevent surface roughening that otherwise occurs when no capping layer is used. MOSFETs are demonstrated using the graphite capped anneal process with a gate oxide grown in N2O and show specific on-resistance of 64 mW×cm2, blocking voltage of up to 1600V and leakage current of 0.5–3 ´10-6 A/cm2 at 1200V. The effective nchannel mobility was found to be 1.5 cm2/V×s at room temperature and increases as temperature increases (2.8 cm2/V×s at 200°C).

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