REACTIVITY AND STABILITY OF OXYGEN VACANCIES ON TiO2 ANATASE (101) SURFACE: FIRST-PRINCIPLES CALCULATIONS

2011 ◽  
Vol 25 (29) ◽  
pp. 4029-4037
Author(s):  
QILI CHEN ◽  
CHAOQUN TANG ◽  
BO LI ◽  
GUANG ZHENG ◽  
KAIHUA HE
Keyword(s):  
First Principles ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Atomic Displacement ◽  
Oxygen Adsorption ◽  
First Principles Calculations ◽  
Functional Theory ◽  
Tio2 Anatase ◽  
Technical Parameters ◽  
Formation Energies

In this study, density-functional theory plane-wave pseudopotential method was employed to investigate several oxygen vacancies on TiO 2 anatase (101) surface. At first, a suitable defect-free slab model has been established by analyzing the surface energies and the atomic relaxations influenced by different technical parameters. The formation energies of different kinds of oxygen vacancies in the outermost layer have also been compared as well as the atomic displacement of the defective surfaces. It was found that the presence of bridging oxygen vacancy is more energetically favored and causes larger atomic displacement than other types of surface oxygen vacancies. The reactivity of oxygen vacancies has also been tested by both molecular and dissociated oxygen adsorption. Furthermore, we discussed the configurations and the electronic properties of O 2-adsorbed surface, and found that the appearance of oxygen adsorbate-induced states in the band gap can make the surface sensitive to visible light.

Systematic first principles calculations of the effects of stacking faults defects on the 4H-SiC band structure

2010 ◽  
Vol 1246 ◽  
Author(s):  
Massimo Camarda ◽  
pietro delugas ◽  
Andrea Canino ◽  
Andrea Severino ◽  
nicolo piluso ◽  
...  
Keyword(s):  
First Principles ◽  
Density Functional ◽  
Stacking Faults ◽  
Perfect Crystal ◽  
First Principles Calculations ◽  
Electronic Band ◽  
Functional Theory ◽  
Experimental Findings ◽  
Electronic Band Structures ◽  
Formation Energies

AbstractShockley-type Stacking faults (SSF) in hexagonal Silicon Carbide polytypes have received considerable attention in recent years since it has been found that these defects are responsible for the degradation of forward I-V characteristics in p-i-n diodes. In order to extend the knowledge on these kind of defects and theoretically support experimental findings (specifically, photoluminescence spectral analysis), we have determined the Kohn-Sham electronic band structures, along the closed path Γ-M-K-Γ, using density functional theory. We have also determined the energies of the SSFs with respect to the perfect crystal finding that the (35) and (44) SSFs have unexpectedly low formation energies, for this reason we could expect these two defects to be easily generated/expanded either during the growth or post-growth process steps.

Phases Stability of Ni-Mn-Ga Alloys Studied by Ab Initio Calculations

2014 ◽  
Vol 783-786 ◽  
pp. 1646-1651
Author(s):  
N. Xu ◽  
J.M. Raulot ◽  
Z.B. Li ◽  
Y.D. Zhang ◽  
J. Bai ◽  
...  
Keyword(s):  
Ab Initio ◽  
First Principles ◽  
Density Functional ◽  
Stable Phase ◽  
First Principles Calculations ◽  
Atomic Position ◽  
Functional Theory ◽  
Ab Initio Simulation ◽  
Formation Energies ◽  
Simulation Package

The phase stabilities and magnetic properties in Ni-Mn-Ga alloys are systematically investigated by means of the first-principles calculations within the framework of density functional theory using the vienna ab initio simulation package. The calculated formation energies show that the tetragonal NM martensite is the most stable phase compared with the cubic austenite and the modulated monoclinic martensite for stoichiometric Ni2MnGa. The atomic magnetic moment keeps constant in austenite and NM martensite, whereas those of Ni and Mn in the modulated martensite oscillate according to the atomic position. Furthermore, The formation energies of the various compositions have been systematically calculated.

First-Principles Calculations of Structural Changes Induced by Oxygen Vacancies in Tetragonal Phase BaTiO3

2011 ◽  
Vol 485 ◽  
pp. 19-22
Author(s):  
Yoshiki Iwazaki ◽  
Tatsuo Sakashita ◽  
Toshimasa Suzuki ◽  
Youichi Mizuno ◽  
Shinji Tsuneyuki
Keyword(s):  
Phase Transition ◽  
Density Functional Theory ◽  
First Principles ◽  
Tetragonal Phase ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Structural Changes ◽  
Cubic Phase ◽  
First Principles Calculations ◽  
Functional Theory

Structural changes induced by oxygen vacancies in tetragonal phase BaTiO3are studied with first principles calculations within density functional theory. In our calculations, the incorporation of oxygen vacancies greatly decreases c/a ratio of the tetragonal phase BaTiO3, and a phase transition from tetragonal to cubic phase occurs when the incorporation of the oxygen vacancies reaches about 4%. Our results also shows that the generation of the oxygen vacancies slightly increases the volume of BaTiO3, and the increases are typically less than 0.5% even in heavily reduced conditions.

Oxygen Vacancies in Amorphous HfO2 and SiO2

2008 ◽  
Vol 1073 ◽  
Author(s):  
Chioko Kaneta ◽  
Takahiro Yamasaki
Keyword(s):  
First Principles ◽  
Density Functional ◽  
Formation Energy ◽  
Oxygen Vacancies ◽  
Gate Dielectrics ◽  
Propagation Mechanism ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
The Difference ◽  
Formation Energies

ABSTRACTFormation energies and electronic properties of oxygen vacancies in amorphous HfO2 gate dielectrics are investigated by employing the first-principles method based on the density functional theory. We have found that the formation energy of neutral oxygen vacancy in amorphous HfO2 distributes from 4.7 to 6.1 eV, most of which is lower than the value for cubic HfO2, 6.0 eV. We also investigated the stabilities of the Vo pairs in various charged state and compared with those in amorphous SiO2. We found that Vo++ is stabilized in the vicinity of Vo in SiO2. In HfO2, however, this does not happen. This suggests the difference of defect propagation mechanism in HfO2 and SiO2.

Systematic First Principles Calculations of the Effects of Stacking Fault Defects on the 4H-SiC Band Structure

2010 ◽  
Vol 645-648 ◽  
pp. 283-286 ◽  
Author(s):  
Massimo Camarda ◽  
Pietro Delugas ◽  
Andrea Canino ◽  
Andrea Severino ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
First Principles ◽  
Density Functional ◽  
Stacking Faults ◽  
Perfect Crystal ◽  
First Principles Calculations ◽  
Electronic Band ◽  
Functional Theory ◽  
Experimental Findings ◽  
Electronic Band Structures ◽  
Formation Energies

Shockley-type Stacking faults (SSF) in hexagonal Silicon Carbide polytypes have received considerable attention in recent years since it has been found that these defects are responsible for the degradation of forward I-V characteristics in p-i-n diodes. In order to extend the knowledge on these kind of defects and theoretically support experimental findings (specifically, photoluminescence spectral analysis), we have determined the Kohn-Sham electronic band structures, along the closed path Γ-M-K-Γ, using density functional theory. We have also determined the energies of the SSFs with respect to the perfect crystal finding that the (35) and (44) SSFs have unexpectedly low formation energies, for this reason we could expect these two defects to be easily generated/expanded either during the growth or post-growth process steps.

Thermodynamic Stability of Hexagonal and Rhombohedral Bn at Cvd Conditions from Van der Waals Corrected First Principles Calculations

2019 ◽  
Author(s):  
Henrik Pedersen ◽  
Björn Alling ◽  
Hans Högberg ◽  
Annop Ektarawong
Keyword(s):  
Thin Films ◽  
Thermodynamic Stability ◽  
First Principles ◽  
Thermal Equilibrium ◽  
Density Functional ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
First Principles Calculations ◽  
Functional Theory ◽  
The Stability

Thin films of boron nitride (BN), particularly the sp<sup>2</sup>-hybridized polytypes hexagonal BN (h-BN) and rhombohedral BN (r-BN) are interesting for several electronic applications given band gaps in the UV. They are typically deposited close to thermal equilibrium by chemical vapor deposition (CVD) at temperatures and pressures in the regions 1400-1800 K and 1000-10000 Pa, respectively. In this letter, we use van der Waals corrected density functional theory and thermodynamic stability calculations to determine the stability of r-BN and compare it to that of h-BN as well as to cubic BN and wurtzitic BN. We find that r-BN is the stable sp<sup>2</sup>-hybridized phase at CVD conditions, while h-BN is metastable. Thus, our calculations suggest that thin films of h-BN must be deposited far from thermal equilibrium.

scholarly journals Hydrogenation and oxidation enhances the thermoelectric performance of Si2BN monolayer

2021 ◽  
Author(s):  
H. R. Mahida ◽  
Deobrat Singh ◽  
Yogesh Sonvane ◽  
Sanjeev K. Gupta ◽  
P. B. Thakor ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Charge Transport ◽  
Transport Properties ◽  
First Principles ◽  
Density Functional ◽  
Thermoelectric Performance ◽  
First Principles Calculations ◽  
Functional Theory

In the present study, we have investigated the structural, electronic, and charge transport properties of pristine, hydrogenated, and oxidized Si2BN monolayers via first-principles calculations based on density functional theory (DFT).

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study

2016 ◽  
Vol 858 ◽  
pp. 465-468 ◽  
Author(s):  
D.P. Ettisserry ◽  
Neil Goldsman ◽  
Akin Akturk ◽  
Aivars J. Lelis
Keyword(s):  
Nitric Oxide ◽  
Silicon Dioxide ◽  
First Principles ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Functional Theory ◽  
Power Mosfets ◽  
Voltage Instability ◽  
Nitrogen Incorporation ◽  
Effective Mobility

In this work, we investigate the behavior of Nitrogen atoms at 4H-Silicon Carbide (4H-SiC)/Silicon dioxide (SiO2) interface during nitric oxide passivation using ab-initio Density Functional Theory. Our calculations suggest different possible energetically favorable and competing mechanisms by which nitrogen atoms could a) incorporate themselves into the oxide, just above the 4H-SiC substrate, and b) substitute for carbon atoms at the 4H-SiC surface. We attribute the former process to cause increased threshold voltage instability (hole traps), and the latter to result in improved effective mobility through channel counter-doping, apart from removing interface traps in 4H-SiC power MOSFETs. These results support recent electrical and XPS measurements. Additionally, Nitric Oxide passivation is shown to energetically favor re-oxidation of the 4H-SiC surface accompanied by the generation of oxygen vacancies under the conditions considered in this work.

Probing the electronic structures of Con (n = 1–5) clusters on γ-Al2O3 surfaces using first-principles calculations

2017 ◽  
Vol 19 (5) ◽  
pp. 3679-3687 ◽  
Author(s):  
Tao Yang ◽  
Masahiro Ehara
Keyword(s):  
Density Functional Theory ◽  
First Principles ◽  
Electronic Structures ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
First Principles Calculations ◽  
Functional Theory

Using density functional theory calculations, we discussed the geometric and electronic structures and nucleation of small Co clusters on γ-Al2O3(100) and γ-Al2O3(110) surfaces.

Oxygen vacancy migration in CSZ using density functional theory

2008 ◽  
Vol 1122 ◽  
Author(s):  
Byeong-Eon Lee ◽  
Dae-Hee Kim ◽  
Yeong-Cheol Kim
Keyword(s):  
Density Functional Theory ◽  
Oxygen Vacancy ◽  
Density Functional ◽  
Oxygen Vacancies ◽  
Nearest Neighbor ◽  
Functional Theory ◽  
The Third ◽  
Vacancy Migration ◽  
Neighbor Site ◽  
Formation Energies

AbstractWe studied oxygen migration in calcia-stabilized cubic zirconia (CSZ) using density functional theory. A Ca atom was substituted for a Zr atom in a 2×2×2 ZrO2 cubic supercell, and an oxygen vacancy was produced to satisfy the charge neutrality condition. We found that the formation energies of an oxygen vacancy, as a function of its location with respect to the Ca atom, were varied. The relative formation energies of the oxygen vacancies located at the first-, second-, third-, and fourth-nearest-neighbors were 0.0, −0.07, 0.19, and 0.19 eV, respectively. Therefore, the oxygen vacancy located at the second-nearest-neighbor site of the Ca atom was the most favorable, the oxygen vacancy located at the first-nearest-neighbor site was the second most favorable, and the oxygen vacancies at the third- and fourth-nearest-neighbor sites were the least favorable. We also calculated the energy barriers for the oxygen vacancy migration between oxygen sites. The energy barriers between the first and the second nearest sites, the second and third nearest sites, and the third and fourth nearest sites were 0.11, 0.46, and 0.23 eV, respectively. Therefore, the oxygen vacancies favored the first- and second-nearest-neighbor oxygen sites when they drifted under an electric field.

Sign in / Sign up

Export Citation Format

Share Document