ISOTYPE SnO2–Si HETEROJUNCTION MADE BY RAPID PHOTOTHERMAL OXIDATION OF Sn

2011 ◽  
Vol 25 (25) ◽  
pp. 3381-3389 ◽  
Author(s):  
RAID A. ISMAIL ◽  
MAHDI H. SHEEL ◽  
SA'AD GHAFORI
Keyword(s):  
Optical Transmission ◽  
Optical Transmittance ◽  
Electrical Measurement ◽  
Tetragonal Crystal ◽  
Current Voltage ◽  
Tetragonal Crystal Structure ◽  
Capacitance Voltage ◽  
Fabrication And Characterization ◽  
Two Peaks

We report on fabrication and characterization of SnO 2– Si n–n made by deposition of SnO 2 film onto monocrystalline silicon substrate by rapid photothermal oxidation (RPO) of Sn with condition 500°C/120 s. The film has been characterized by techniques such as XRD, optical transmission, and Hall effect. The XRD spectrum showed that the grown SnO 2 was polycrystalline in nature with tetragonal crystal structure. From optical transmittance data the band gap of SnO 2 film was calculated and found to be 3.9 eV. The electrical measurement revealed that the SnO 2 film was n-type. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of SnO 2– Si heterojunction were investigated. The ideality factor of junction estimated from I–V characteristics was 1.8 at 300 K. The spectral responsivity of heterojunction having two peaks of response located at 650 nm and 850 nm.

Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes

2004 ◽  
Vol 829 ◽  
Author(s):  
M. A. Awaah ◽  
R. Nana ◽  
K. Das
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Electrical Measurement ◽  
High Concentration ◽  
Recombination Lifetime ◽  
Light Emitting ◽  
Radiative Processes ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTA recombination lifetime of approximately 25 ns was extracted from measured reverse recovery storage times in AlGaN/GaN/AlGaN double heterojunction blue light emitting diodes. This experimentally determined lifetime is expected to arise from a combination of radiative and non-radiative processes occurring in the diodes. The non-radiative processes are likely to be due the presence of a high concentration deep-states as identified from the current-voltage and capacitance-voltage measurements. Current-voltage characteristics of these diodes were highly non-ideal as indicated by high values of the ideality factor ranging from 3.0 – 7.0. Logarithmic plots of the forward characteristics indicated a space-charge-limited-current (SCLC) conduction in presence of a high density of “deep-level states” in the active region of the diodes. An analysis of these characteristics yielded an approximate density of these deep-level states as 2 × 1017/cm3. The density of deep-states extracted from capacitance-voltage measurements were in good agreement with that obtained from current-voltage measurements.

FABRICATION AND CHARACTERIZATION OF La2-xSrxCuO4/Nb-SrTiO3 HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES

2012 ◽  
Vol 27 (01) ◽  
pp. 1350005 ◽  
Author(s):  
Y. ZHANG ◽  
G. F. WANG ◽  
W. L. LI ◽  
J. Q. SHEN ◽  
P. G. LI ◽  
...  
Keyword(s):  
Carrier Density ◽  
Pulsed Laser ◽  
Depletion Layer ◽  
Laser Deposition ◽  
Superconducting Gap ◽  
Applied Bias ◽  
Current Voltage ◽  
Fabrication And Characterization ◽  
The Difference

Two types of p–n junction were fabricated by depositing underdoped La 1.9 Sr 0.1 CuO 4 film and overdoped La 1.8 Sr 0.2 CuO 4 film on n -type 0.5 wt.% Nb -doped SrTiO 3 (NSTO) substrates using pulsed laser deposition technique (PLD), respectively. Current–voltage (I–V) characteristics of the La 2-x Sr x CuO 4/NSTO heterojunction were measured in the temperature range from 5 K to 300 K. All I–V curves show a fine rectifying property and a visible reduction of the diffusion potential (Vd) is observed, but the behaviors of Vd are vastly different for the underdoped and overdoped regimes at temperatures below Tc. Analysis results show that the characteristics of the heterojunction are possibly affected not only by the superconducting gap of LSCO at Tc, but also by the depletion layer in the interface of LSCO/NSTO junction. The variation of the depletion layer is possibly different under the same applied bias voltages for the underdoped La 1.9 Sr 0.1 CuO 4/NSTO junction and overdoped La 1.8 Sr 0.2 CuO 4/NSTO junction due to the difference of carrier density at La 1.9 Sr 0.1 CuO 4 and La 1.8 Sr 0.2 CuO 4.

scholarly journals Characterization of tin dioxide nanoparticles synthesized by oxidation

Cerâmica ◽  
2015 ◽  
Vol 61 (359) ◽  
pp. 328-333 ◽  
Author(s):  
R. C. Abruzzi ◽  
B. A. Dedavid ◽  
M. J. R. Pires
Keyword(s):  
Gas Sensors ◽  
Tin Dioxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Synthesis Conditions ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Activation Efficiency ◽  
Complementary Techniques

AbstractTin dioxide (SnO2) is a promising material with great potential for applications such as gas sensors and catalysts. Nanostructures of this oxide exhibit greater activation efficiency given their larger effective surface. The present study presents results of the synthesis and characterization of tin dioxide under different conditions via oxidation of solid tin with nitric oxide. SnO2powder was characterized primarily by X-ray diffraction and scanning electron microscopy, as well as complementary techniques such as energy-dispersive X-ray spectroscopy, dynamic light scattering and Fourier transform infrared spectroscopy. The results indicated that the established synthesis conditions were suitable for obtaining rutile tin dioxide nanoparticles with a tetragonal crystal structure.

Characterization of Nanocrystalline p-CuO/n-Si Hetrojunction Prepared by RF-Sputtering

2014 ◽  
Vol 1024 ◽  
pp. 120-123
Author(s):  
Nezar Gassem Elfadill ◽  
M. Roslan Hashim ◽  
Khaled M. Chahrour ◽  
Chun Sheng Wang
Keyword(s):  
Cupric Oxide ◽  
Pure Copper ◽  
Rf Sputtering ◽  
Saturation Current ◽  
Font Size ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Current Voltage ◽  
Capacitance Voltage

Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}Nanocrystalline cupric oxide (CuO) film was prepared by sputtering of pure copper metal on n-type single crystalline Si substrate under argon-oxygen ambient. Structural and morphological analyses of the as-deposited CuO films were performed by X-ray diffraction (XRD) diffractometer and Field Emission Scanning Electron Microscopy (FESEM). The results show Single crystalline granular nanocrystalline (002) CuO films, with 18 nm crystallite size. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed for p-CuO/n-Si hetrojunction. Diode parameters such as saturation current (Is=9.5E-6 A) and ideality factor (n=1.86) were extracted from the dark I-V characteristics. Potential barrier height of the junction (ϕi=1.1V) was revealed from (1/C2- V) plot. Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

Studied on Structural Characterization of Lanthanum Doped Barium Titanium Ceramics

2015 ◽  
Vol 819 ◽  
pp. 198-203
Author(s):  
Nur Farahin Abdul Hamid ◽  
Rozana Aina Maulat Osman ◽  
Mohd Sobri Idris ◽  
Tze Qing Tan
Keyword(s):  
Crystal Structure ◽  
Lattice Parameter ◽  
Phase Changes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
La Doped ◽  
Conventional Solid State Synthesis

La-doped barium titanate (BaTiO3) was prepared using conventional solid state synthesis route. All peaks for sample x=0 are approaching the phase pure of BaTiO3 structure with tetragonal crystal structure (P4mm). Sintering of pressed powder are performed at 1300oC, 1400oC and 1450oC for overnight for pure BaTiO3 and 1350oC for 3 days for BaTiO3 doped lanthanum with intermittent grinding. Phase transition was studied by different x composition. The changes in the crystal structure of the composition x=0.1 and 0.2 were detected by using X-ray diffraction (XRD). The phase changes between tetragonal-cubic and cubic-tetragonal depending on the temperature. Rietveld Refinement analysis is carried out to determine the lattice parameter and unit cell for BaTiO3.

Fabrication and characterization of AlN metal–insulator–semiconductor grown Si substrate

2017 ◽  
Vol 31 (33) ◽  
pp. 1750313
Author(s):  
A. Mahyuddin ◽  
A. Azrina ◽  
M. Z. Mohd Yusoff ◽  
Z. Hassan
Keyword(s):  
Molecular Beam ◽  
Unit Area ◽  
Effective Number ◽  
Si Substrate ◽  
Metal Insulator ◽  
Remarkable Effect ◽  
Capacitance Voltage ◽  
Effective Oxide Charge ◽  
Fabrication And Characterization

An experimental investigation was conducted to explore the effect of inserting a single AlGaN interlayer between AlN epilayer and GaN/AlN heterostructures on Si (111) grown by molecular beam epitaxy (MBE). It is confirmed from the scanning electron microscopy (SEM) that the AlGaN interlayer has a remarkable effect on reducing the tensile stress and dislocation density in AlN top layer. Capacitance–voltage (C–V) measurements were conducted to study the electrical properties of AlN/GaN heterostructures. While deriving the findings through the calculation it is suggested that the AlGaN interlayer can significantly reduce the value of effective oxide charge density and total effective number of charges per unit area which are [Formula: see text] and [Formula: see text], respectively.

Hydrothermal synthesis of zirconia nanocrystals in supercritical water

2004 ◽  
Vol 19 (8) ◽  
pp. 2230-2234 ◽  
Author(s):  
Yukiya Hakuta ◽  
Tomotugu Ohashi ◽  
Hiromichi Hayashi ◽  
Kunio Arai
Keyword(s):  
Hydrothermal Synthesis ◽  
Supercritical Water ◽  
Hydrothermal Reaction ◽  
Acetate Solution ◽  
Supercritical Conditions ◽  
Transmission Electron ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Zirconia Powders

Zirconia nanocrystals were prepared by hydrothermal reaction of 0.05 M zirconyl nitrate and zirconyl acetate solutions at supercritical conditions of 400 °C and30 MPa for 1.8 s reaction time. Characterization of products were performed byx-ray diffraction, transmission electron microscopy, and Brunauer–Emmett–Teller measurements. The product particles were compared with zirconia particles prepared by conventional hydrothermal synthesis routes and precipitation-calcination. From the results, zirconia powders prepared in supercritical water had higher crystallinity than those obtained by other methods. Product particles with tetragonal crystal structure with a mean diameter of 6.8 nm could be formed from 0.05 M zirconyl acetate solution in the presence of 0.1 M potassium hydroxide at supercritical conditions.

Nanowire Arrays for Thermoelectric Devices

2003 ◽  
Author(s):  
Woo C. Kim ◽  
Alexis R. Abramson ◽  
Scott T. Huxtable ◽  
Arun Majumdar ◽  
Yiying Wu ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Nanowire Arrays ◽  
Native Oxide ◽  
Thermoelectric Device ◽  
Growth Mechanisms ◽  
Thermoelectric Devices ◽  
Current Voltage ◽  
Semiconductor Junction ◽  
Fabrication And Characterization

This study reports on the fabrication and characterization of two prototype thermoelectric devices constructed of either silicon (Si) or bismuth telluride (Bi2Te3) nanowire arrays. The growth mechanisms and fabrication procedures of the Si and Bi2Te3 devices are different as described in this paper. To characterize the thermoelectric device components, current-voltage (I-V) characteristics were first used to estimate their performance. For the Si device, the I-V characteristics suggest ohmic contacts at the metal-semiconductor junction. For the Bi2Te3 device, the I-V characteristics curve showed a rectifying contact. Either low doping of the Bi2Te3 or surface contamination, i.e. native oxide, may cause the rectifying contact. The reversible Peltier effects occurring within the Si device were analyzed using a micro-thermocouple. Results indicated possible limitations of using Si nanowire arrays for the thermoelectric device.

Characterization of CdZnO/Si heterojunction photodiode prepared by pulsed laser deposition

2018 ◽  
Vol 32 (31) ◽  
pp. 1850341 ◽  
Author(s):  
Jehan A. Saimon ◽  
Suzan N. Madhat ◽  
Khawla S. Khashan ◽  
Azhar I. Hassan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Measurement ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Increase Doping Concentration ◽  
Si Substrates ◽  
Current Voltage ◽  
Zno Crystal

The Cd[Formula: see text]Zn[Formula: see text]O thin films have been deposited on glass and Si substrates at room-temperature with different Cd contents (x = 0, 2%, 4% and 6 wt.%) by pulsed laser deposition (PLD) technique. X-ray diffraction (XRD) analyses evidenced that the films possess polycrystalline and a hexagonal ZnO crystal structure for x = 0, 2% and 4% with a preferred orientation in the a-axis (101) direction, while films with a mixed hexagonal and cubic structure was revealed for x = 6 wt.%. Electrical measurement presented that the resistivity decreased with increased temperature and concentration of Cd. The deliberated activation energy was reduced was from 0.224 to 0.113 eV with increase doping concentration. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the fabricated Cd[Formula: see text]Zn[Formula: see text]O/p-Si heterojunction varied with the applied bias and the Cd concentration. The results of the values of built-in potential (V[Formula: see text]) and the ideality factor (n) increased with raising Cd concentration.

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