DYNAMICS OF RADIATIVE POINT DEFECTS IN GALLIUM ARSENIDE DURING RELAXATION OF LOCAL HEATING
2008 ◽
Vol 18
(09)
◽
pp. 2845-2849
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Keyword(s):
In this paper we have analyzed the dynamics of redistribution of the radiative point defects in gallium arsenide during relaxation of the local heating in a semiconductor sample, generated by a radiative particle in the initial stage of stabilization of clusters of defects. We calculated: (i) the maximum heating temperature of a semiconductor sample, and (ii) the point defect diffusion coefficient corresponding to the maximum temperature.
2021 ◽
2020 ◽
2019 ◽
2020 ◽
Vol 2020
(4)
◽
pp. 186-192
1955 ◽
Vol 1955
(16)
◽
pp. 95-99
Keyword(s):
1955 ◽
Vol 19
(2)
◽
pp. 177-180
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1951 ◽
Vol 15
(3)
◽
pp. 106-109
Keyword(s):
1967 ◽
Vol 31
(8)
◽
pp. 970-975
COMPARATIVE ANALYSIS OF THE FOAM GLASS GRAVEL TYPES EXPERIMENTALLY PRODUCED BY MICROWAVE IRRADIATION
2020 ◽
Vol 26
(3)
◽
pp. 58-68