INFLUENCE OF THE SUBSTRATE TEMPERATURE ON TiO2 THIN LAYERS DEPOSITED BY THE DIRECT CURRENT MAGNETRON SPUTTERING TECHNOLOGY

2020 ◽  
pp. 2050054
Author(s):  
RADOUANE GRAINE ◽  
KHOULOUD BEDOUD ◽  
NADJETTE SEHAB ◽  
DJAMEL ZELMATI
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Extinction Coefficient ◽  
Future Application ◽  
X Ray ◽  
Uv Visible ◽  
Substrate Temperatures

In this study, Anatase thin films of titanium dioxide (TiO[Formula: see text] are deposited by the Direct Current (DC) magnetron sputtering technique on glass substrate for future application in gas sensors. In our work, we focused and discussed the effect of various substrate temperatures [Formula: see text]C, [Formula: see text]C and [Formula: see text]C, and film thicknesses 142, 220 and 410[Formula: see text]nm, respectively, in order to study the structural and optical properties of the TiO2 thin films. The crystalline structure and optical properties of TiO2 nanoparticles were investigated using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Atomic Force Microscopy (AFM), Raman spectroscopy and UV–visible spectroscopy. The formation of the Anatase TiO2 with Tetragonal crystal structure has been confirmed with XRD. UV–visible spectrophotometry characterization of the developed thin films showed that all the films had an optical transmission greater than 92% in the visible region. In addition, the obtained direct and indirect optical band gaps using the Tauc plot are 3.66, 3.34[Formula: see text]eV at [Formula: see text]C 3.74, 3.37[Formula: see text]eV at [Formula: see text]C and 3.71, 3.37[Formula: see text]eV at [Formula: see text]C, respectively. Forouhi–Bloomer (FB) physical model has been used to obtain the refractive index and extinction coefficient by fitting theoretical transmittance curves to experimental ones. The optical refractive index is found to vary from 2.350 for [Formula: see text]C, 2.1499 for [Formula: see text]C and 2.1420 for [Formula: see text]C. Moreover, we have obtained an extinction coefficient [Formula: see text] ([Formula: see text] of around [Formula: see text] for both substrate temperatures [Formula: see text]C and [Formula: see text]C, and around [Formula: see text] for the [Formula: see text]C.

scholarly journals Effect of Manganese Contain on the Optical Properties of CuO Thin Films

2016 ◽  
Vol 65 ◽  
pp. 37-42
Author(s):  
Wasmaa Abdulsattar Jabbar
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Copper Oxide ◽  
Extinction Coefficient ◽  
Energy Gap ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray ◽  
Uv Visible

Copper oxide prepared with various contains of Manganese by chemical spray pyrolysis. Some optical properties are studied from recording the absorption spectra via UV-Visible spectrophotometer in the range of 460-900 nm. The absorbance increased with increasing Mn-contain in the CuO thin films, and the absorption coefficient. Extinction coefficient and refractive index are decreased with increasing Mn-contain in the CuO thin films, also the energy gap shifted from 2 eV to 1.91 eV after 4%Mn additive.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

scholarly journals Deposition Time induced Structural and Optical Properties of Lead Tin Sulphide Thin Films

2021 ◽  
pp. 455-458
Author(s):  
J. Damisa ◽  
J. O. Emegha ◽  
I. L. Ikhioya
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Tin Oxide ◽  
Deposition Time ◽  
Deposition Process ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Prepared Material

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.

scholarly journals Optical properties of X-ray irradiated Cu6PS5I-based thin films deposited by magnetron sputtering

2017 ◽  
Vol 41 (0) ◽  
pp. 7-13
Author(s):  
Ihor Petrovych Studenyak ◽  
Andrii Vasyliovych Bendak ◽  
Mykola Oleksiyovych Vizenko ◽  
Vitalii Yuriyovych Izai ◽  
Andrii Mykhailovych Solomon ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
X Ray

Structural and Optical Properties of TiO2 Thin Films Prepared by Thermal Oxidation of Ti Thin Films

2013 ◽  
Vol 770 ◽  
pp. 225-228
Author(s):  
L. Uttayan ◽  
K. Aiempanakit ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
V. Pattantsetakul ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Oxidation ◽  
Annealing Temperature ◽  
Oxidation Process ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Wafer Substrate ◽  
Uv Visible ◽  
Ti Films

Titanium dioxide (TiO2) films were prepared by thermal oxidation from Ti films. The Ti films were deposited on glass and silicon (100) wafer substrate by dc magnetron sputtering and subsequent with thermal oxidation process. The crystal structure and morphology of TiO2 films were estimated by using X-ray diffractometry (XRD) and field-emission scanning electron microscopy (FE-SEM), respectively. The optical property of TiO2 films was determined by UV-Visible spectrophotometer. The influences of annealing temperature between 200 to 500°C in air for 1 hour on the structure and optical properties of TiO2 films were investigated. The increasing of annealing temperature was directly affected the phase transition from Ti to TiO2. The optical and structural properties of TiO2 films are the best exhibited with increasing the annealing temperature at 500 °C.

The Influence of Bi Content on the Properties of Bismuth Ferrite Thin Films Fabricated by Magnetron Sputtering

2013 ◽  
Vol 745-746 ◽  
pp. 131-135
Author(s):  
Hu Rui Yan ◽  
Nuo Fan Ding ◽  
Gang Wu ◽  
Ping Xiong Yang ◽  
Jun Hao Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Extinction Coefficient ◽  
Energy Gap ◽  
Lattice Mismatch ◽  
Bismuth Ferrite ◽  
Film Surface ◽  
Si Substrate ◽  
Impurity Phases

In the process of BiFeO3 film preparation by magnetron sputtering, Bi element is volatile, leading to the films which often appear impurity phases. Therefore, Both Bi excessive 5% (B1.05FO) and 8% (B1.08FO) BFO film in Si substrate were prepared by magnetron sputtering. X-Ray Diffraction (XRD) results showed that the BFO thin films fabricated in the Si substrate are perovskite structure, that the B1.08FO film appeared less impurity phases than B1.05FO film, and that stress due to substrate lattice mismatch caused the shift of XRD patterns. In Raman study, it was concluded that both B1.08FO film and B1.05FO film appeared ten Raman peaks in the range from 50cm-1 to 800cm-1, and that B1.08FO Raman peaks intensity was stronger in 137.1cm-1.168.5cm-1 and 215.3cm-1. Spectroscopic ellipsometry test showed that the refractive index and the extinction coefficient of B1.05FO film were 2.25 and 0.07 respectively in 600 nm with 2.67eV of energy gap; the refractive index and the extinction coefficient of B1.08FO film were 2.14 and 0.05 in 600 nm respectively with 2.71eV of energy gap. Atomic Force Microscope (AFM) was used to characterize the film surface morphology, finding that the B1.08FO film prepared in Si substrate was denser while grain size and surface roughness were smaller.

scholarly journals Surface Stoichiometry and Optical Properties of Cux–TiyCz Thin Films Deposited by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 551 ◽  
Author(s):  
Avishek Roy ◽  
Arun Kumar Mukhopadhyay ◽  
Sadhan Chandra Das ◽  
Gourab Bhattacharjee ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Metal Matrix ◽  
Optical Band Gap ◽  
Matrix Composites ◽  
X Ray ◽  
Peak Intensity ◽  
Ternary Carbide

Ternary carbide in metal matrix composites constitute a big challenge in the industry, and in this regard their surface treatment is one of the most important issues. Ternary carbide (CuxTiyCz, where x, y and z are integers) thin films are synthesized by magnetron sputtering and characterized with respect to the film depth. X-ray photoelectron spectroscopy (XPS) of Cu-2p and Ti-2p peaks shows the associated shake-up satellite peaks at a smaller film depth; the peak intensity is reduced at a higher depth. The relative intensity of Cu and Ti increases at a larger film depth. The optical band gap varies from 1.83 to 2.20 eV at different film depths.

Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

2013 ◽  
Vol 534 ◽  
pp. 442-445 ◽  
Author(s):  
A. Stolz ◽  
A. Soltani ◽  
B. Abdallah ◽  
J. Charrier ◽  
D. Deresmes ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Direct Current Magnetron Sputtering
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