Epitaxy of 3d Metals on Semiconductors

1998 ◽  
Vol 05 (01) ◽  
pp. 273-278 ◽  
Author(s):  
Xiaofeng Jin
Keyword(s):  
Photoelectron Spectroscopy ◽  
Critical Role ◽  
High Energy ◽  
Interface Structure ◽  
High Energy Electron ◽  
X Ray ◽  
3D Metals ◽  
Transmission Electron ◽  
Lattice Mismatched Epitaxy ◽  
Metal Phases

Growth of fcc Mn on GaAs(001), as an example of the lattice-mismatched epitaxy of 3d metals on semiconductors, has been studied using reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS) and the high resolution transmission electron microscope (HRTEM). The result shows that the interface structure plays a critical role in the epitaxial growth of 3d metals on semiconductors. A new recipe is proposed to search for more epitaxially grown 3d metal phases.

Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

1993 ◽  
Vol 8 (2) ◽  
pp. 321-323 ◽  
Author(s):  
Ryusuke Kita ◽  
Takashi Hase ◽  
Hiromi Takahashi ◽  
Kenichi Kawaguchi ◽  
Tadataka Morishita
Keyword(s):  
Lattice Constant ◽  
High Energy ◽  
Low Energy ◽  
Diffraction Reflection ◽  
High Energy Electron ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

Surface Structure of Sulfur Coated GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Shigeo Goto
Keyword(s):  
Electron Beam ◽  
Surface Structure ◽  
Chemical Bond ◽  
Photoelectron Spectroscopy ◽  
Strong Dependence ◽  
High Energy ◽  
Chemical Bonds ◽  
High Energy Electron ◽  
X Ray ◽  
Beam Diffraction

AbstractSurface structure of (NH4)2S treated GaAs. is investigated using PL (PhotoLuminescence), XPS (X-ray Photoelectron Spectroscopy) and RHEED (Reflection of High Energy Electron beam Diffraction). The data taken with these techniques show the strong dependence upon the crystal orientations coming from the stabilities of chemical bonds of Ga-S and As-S on GaAs crystals. The greater enhancement of PL intensity, the clearer RHEED patterns and the smaller amount of oxides on (111)A than (111)B implies the realization of a more stable structure composed mainly of the Ga-S chemical bond.

Characterization Techniques For Laser-Annealed Polysilicon on Insulating Layers

1980 ◽  
Vol 1 ◽  
Author(s):  
J. T. Schott ◽  
J. J. Comer
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Characterization Techniques ◽  
Cw Laser ◽  
Transmission Electron ◽  
Scanning Electron

ABSTRACTVarious characterization techniques are applied to pulsed and cw laser-annealed polysilicon layers deposited on oxide layers. The results are used to compare these techniques as to the type and completeness of information provided, as well as sample preparation requirements and general ease or difficulty of measurement. The techniques employed include scanning electron microscopy (SEM), electron channeling micrographs and selected area channeling patterns (SACP), reflection (high energy) electron diffraction (RHEED), transmission electron microscopy (TEM) and selected area diffraction (SAD), x-ray diffraction, optical techniques and etching techniques.

Structural properties of Eu doped GaN and its relation with luminescence properties

2004 ◽  
Vol 831 ◽  
Author(s):  
Hyungjin Bang ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka ◽  
Katsuhiro Akimoto
Keyword(s):  
Structural Properties ◽  
High Energy ◽  
Concentration Quenching ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Close Relationship ◽  
The Eu

ABSTRACTThe Structural properties of Europium (Eu) doped GaN and its relation with optical properties were studied. Concentration quenching of the intensity of the Eu related luminescence observed when Eu concentration exceeds 3 at.%. In situ reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM), and X-ray diffraction (XRD) were carried out to study this luminescence quenching and it was discovered that there is close relationship between the luminescence intensity at 622 nm and structural properties. The cause of the concentration quenching is likely related to the polycrystalline growth as well as to the EuN formation.

Sign in / Sign up

Export Citation Format

Share Document