GENERATION OF MID-INFRARED RADIATION BY IMPACT IONIZATION OF DEEP-CENTERS IN SEMICONDUCTOR STRUCTURES

Narrow-band mid-infrared electroluminescence associated with internal transitions of metal impurities embedded in semiconductors following the impact ionization of the latter is reported. We have demonstrated this phenomenon for Fe2+ deep acceptors in InP. At 10 K the spectrum is dominated by a set of sharp lines at 3.5 µm, corresponding to the symmetry allowed (5T2→5E) d-shell transitions of Fe2+. Optical power up to ≈40 nW has been measured.

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Generation of tunable, narrow-band mid-infrared radiation through a 532-nm-pumped KTP optical parametric amplifier

Applied Optics ◽

10.1364/ao.35.001473 ◽

1996 ◽

Vol 35 (9) ◽

pp. 1473 ◽

Cited By ~ 8

Author(s):

S. A. Reid ◽

Y. Tang

Keyword(s):

Infrared Radiation ◽

Narrow Band ◽

Parametric Amplifier ◽

Optical Parametric Amplifier ◽

Mid Infrared ◽

Optical Parametric ◽

532 Nm

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The Impact of Narrow-band Imaging on the Pre- and Intra- operative Assessments of Neoplastic and Preneoplastic Laryngeal Lesions. A Systematic Review

International Archives of Otorhinolaryngology ◽

10.1055/s-0040-1719119 ◽

2020 ◽

Author(s):

Carmelo Saraniti ◽

Enzo Chianetta ◽

Giuseppe Greco ◽

Norhafiza Mat Lazim ◽

Barbara Verro

Keyword(s):

White Light ◽

Diagnostic Tool ◽

Narrow Band ◽

Narrow Band Imaging ◽

Resection Margins ◽

Predictive Values ◽

White Light Endoscopy ◽

Laryngeal Lesions ◽

Sensitivity Specificity ◽

The Impact

Introduction Narrow-band imaging is an endoscopic diagnostic tool that, focusing on superficial vascular changes, is useful to detect suspicious laryngeal lesions, enabling their complete excision with safe and tailored resection margins. Objectives To analyze the applications and benefits of narrow-band imaging in detecting premalignant and malignant laryngeal lesions through a comparison with white-light endoscopy. Data Synthesis A literature search was performed in the PubMed, Scopus and Web of Science databases using strict keywords. Then, two authors independently analyzed the articles, read the titles and abstracts, and read completely only the relevant studies according to certain eligibility criteria. In total, 14 articles have been included in the present review; the sensitivity, specificity, positive and negative predictive values, and accuracy of pre- and/or intraoperative narrow-band imaging were analyzed. The analysis showed that narrow-band imaging is better than white-light endoscopy in terms of sensitivity, specificity, positive and negative predictive values, and accuracy regarding the ability to identify cancer and/or precancerous laryngeal lesions. Moreover, the intraoperative performance of narrow-band imaging resulted more effective than the in-office performance. Conclusion Narrow-band imaging is an effective diagnostic tool to detect premalignant and malignant laryngeal lesions and to define proper resection margins. Moreover, narrow-band imaging is useful in cases of leukoplakia that may cover a possible malignant lesion and that cannot be easily assessed with white-light endoscopy. Finally, a shared, simple and practical classification of laryngeal lesions, such as that of the European Laryngological Society, is required to identify a shared lesion management strategy. Key Points

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Mid-infrared narrow band plasmonic perfect absorber for vibrational spectroscopy

Sensors and Actuators A Physical ◽

10.1016/j.sna.2019.111757 ◽

2020 ◽

Vol 301 ◽

pp. 111757 ◽

Cited By ~ 3

Author(s):

Semih Korkmaz ◽

Mustafa Turkmen ◽

Serap Aksu

Keyword(s):

Vibrational Spectroscopy ◽

Narrow Band ◽

Perfect Absorber ◽

Mid Infrared

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Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Light Science & Applications ◽

10.1038/s41377-021-00553-2 ◽

2021 ◽

Vol 10 (1) ◽

Author(s):

Jun Yin ◽

Lian Liu ◽

Yashu Zang ◽

Anni Ying ◽

Wenjie Hui ◽

...

Keyword(s):

High Performance ◽

Impact Ionization ◽

Low Cost ◽

Atomic Layer ◽

Light Illumination ◽

Insulation Material ◽

Defect States ◽

Uv Illumination ◽

Layer Deposition ◽

The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

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Normal incidence detection of ultraviolet, visible, and mid-infrared radiation in a single GaAs/AlGaAs device

Optics Letters ◽

10.1364/ol.34.002036 ◽

2009 ◽

Vol 34 (13) ◽

pp. 2036 ◽

Cited By ~ 10

Author(s):

G. Ariyawansa ◽

P. V. V. Jayaweera ◽

A. G. U. Perera ◽

S. G. Matsik ◽

M. Buchanan ◽

...

Keyword(s):

Infrared Radiation ◽

Normal Incidence ◽

Mid Infrared

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Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.311 ◽

2009 ◽

Vol 615-617 ◽

pp. 311-314 ◽

Cited By ~ 4

Author(s):

W.S. Loh ◽

J.P.R. David ◽

B.K. Ng ◽

Stanislav I. Soloviev ◽

Peter M. Sandvik ◽

...

Keyword(s):

Phonon Scattering ◽

Impact Ionization ◽

Positive Temperature Coefficient ◽

Positive Temperature ◽

Different Temperatures ◽

Ionization Coefficients ◽

Increasing Temperature ◽

The Impact ◽

Good Agreement ◽

Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

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