A REVIEW OF 1/f NOISE IN TERMS OF MOBILITY FLUCTUATIONS AND WHITE NOISE IN MODERN SUBMICRON BIPOLAR TRANSISTORS — BJTs AND HBTs

Experimental studies on low frequency noise in bipolar junction transistors (BJT) including polysilicon emitter, hetero-junction bipolar transistors (HBTs) and silicon-germanium hetero-junction transistors (SiGe HBTs) are reviewed. The 1/f noise is treated in terms of mobility fluctuations. The validity of a new empirical relation between the 1/f noise corner frequency fc (the frequency where the 1/f noise and shot noise are equal) and the peak cutoff frequency frpeak is investigated. The experimental procedure to investigate the most dominant low-frequency noise source in the equivalent circuit is described. At medium frequencies, the white noise becomes dominant and the noise figure is calculated taking into account the emitter and base series resistance.

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ON THE ORIGIN OF 1/F NOISE IN MOSFETS

Fluctuation and Noise Letters ◽

10.1142/s0219477507003970 ◽

2007 ◽

Vol 07 (03) ◽

pp. L321-L339 ◽

Cited By ~ 5

Author(s):

L. K. J. VANDAMME

Keyword(s):

Empirical Relation ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Time Constants ◽

Strong Inversion ◽

Typical Shape ◽

Rts Noise ◽

Lorentzian Spectrum ◽

Mobility Fluctuations

Often the 1/f noise in MOSFETs is stated to be an ensemble of many RTS with different time constants. The majority of literature on 1/f noise is overlooking the contribution due to mobility fluctuations that are uncorrelated with number fluctuations. Here, we demonstrate that the so-called proofs for Δ N can also be obtained from the empirical relation. The following misunderstandings and controversial topics on the surface and bulk contributions to the low-frequency noise will be addressed: 1) 1/f and RTS noise can have different physical origins. An analysis in time domain shows that the low-frequency noise with RTS is nothing else than a superposition of a two level noise with a Lorentzian spectrum and a Gaussian noise with a pure 1/f spectrum and different bias dependency. 2) It is very unlikely that in a spectrum consisting of one strong two level RTS and a pure 1/f noise, the 1/f noise is a superposition of many RTS with different time constants. 3) The spreading in WLS I /I2 below a critical WL is not a proof for the Δ N origin. 4) The typical shape in the double log plot from sub threshold to strong inversion of S I/ I 2 versus I , is also not a proof for the Δ N origin.

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Low-frequency noise characterization of self-aligned AlGaAs-GaAs heterojunction bipolar transistors with a noise corner frequency below 3 kHz

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.734534 ◽

1998 ◽

Vol 46 (11) ◽

pp. 1604-1613 ◽

Cited By ~ 9

Author(s):

J.-H. Shin ◽

J. Kim ◽

Y. Chung ◽

J. Lee ◽

Y. Suh ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Low Frequency ◽

Bipolar Transistors ◽

Corner Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Characterization

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Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00059-7 ◽

2000 ◽

Vol 40 (11) ◽

pp. 1897-1903 ◽

Cited By ~ 6

Author(s):

J.A Chroboczek ◽

G Ghibaudo

Keyword(s):

Metal Oxide ◽

Heterojunction Bipolar Transistors ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Bipolar Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Characterization and modeling of base current in n-p-n polysilicon emitter bipolar transistors using low-frequency noise analysis

10.1117/12.186749 ◽

1994 ◽

Author(s):

David Quon ◽

Yang H. Chang ◽

Gregory J. Sonek ◽

Guann-pyng Li

Keyword(s):

Noise Analysis ◽

Low Frequency ◽

Bipolar Transistors ◽

Frequency Noise ◽

Low Frequency Noise ◽

Base Current ◽

Polysilicon Emitter

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Phase noise and a low-frequency noise reduction method in bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.595950 ◽

1997 ◽

Vol 44 (7) ◽

pp. 1180-1181 ◽

Cited By ~ 8

Author(s):

K. Takagi ◽

S. Serikawa ◽

T. Kurita

Keyword(s):

Noise Reduction ◽

Phase Noise ◽

Reduction Method ◽

Low Frequency ◽

Bipolar Transistors ◽

Frequency Noise ◽

Low Frequency Noise

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Crowding effects and low frequency noise in polysilicon emitter bipolar transistors

Solid-State Electronics ◽

10.1016/s0038-1101(99)00008-8 ◽

1999 ◽

Vol 43 (5) ◽

pp. 931-936 ◽

Cited By ~ 2

Author(s):

Jean-Marc Routoure ◽

Jacques Lepaisant ◽

Daniel Bloyet ◽

Serge Bardy ◽

Jacques Lebailly

Keyword(s):

Low Frequency ◽

Bipolar Transistors ◽

Frequency Noise ◽

Low Frequency Noise ◽

Crowding Effects ◽

Polysilicon Emitter

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Low Frequency Noise Analysis in Advanced CMOS Devices

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.441 ◽

2011 ◽

Vol 324 ◽

pp. 441-444 ◽

Cited By ~ 6

Author(s):

Jalal Jomaah ◽

Majida Fadlallah ◽

Gerard Ghibaudo

Keyword(s):

Experimental Data ◽

Noise Analysis ◽

Low Frequency ◽

Deep Submicron ◽

Electrical Noise ◽

Frequency Noise ◽

Low Frequency Noise ◽

Noise Sources ◽

The Impact ◽

Mobility Fluctuations

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

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