ON THE ORIGIN OF 1/F NOISE IN MOSFETS

2007 ◽  
Vol 07 (03) ◽  
pp. L321-L339 ◽  
Author(s):  
L. K. J. VANDAMME
Keyword(s):  
Empirical Relation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Time Constants ◽  
Strong Inversion ◽  
Typical Shape ◽  
Rts Noise ◽  
Lorentzian Spectrum ◽  
Mobility Fluctuations

Often the 1/f noise in MOSFETs is stated to be an ensemble of many RTS with different time constants. The majority of literature on 1/f noise is overlooking the contribution due to mobility fluctuations that are uncorrelated with number fluctuations. Here, we demonstrate that the so-called proofs for Δ N can also be obtained from the empirical relation. The following misunderstandings and controversial topics on the surface and bulk contributions to the low-frequency noise will be addressed: 1) 1/f and RTS noise can have different physical origins. An analysis in time domain shows that the low-frequency noise with RTS is nothing else than a superposition of a two level noise with a Lorentzian spectrum and a Gaussian noise with a pure 1/f spectrum and different bias dependency. 2) It is very unlikely that in a spectrum consisting of one strong two level RTS and a pure 1/f noise, the 1/f noise is a superposition of many RTS with different time constants. 3) The spreading in WLS I /I2 below a critical WL is not a proof for the Δ N origin. 4) The typical shape in the double log plot from sub threshold to strong inversion of S I/ I 2 versus I , is also not a proof for the Δ N origin.

A REVIEW OF 1/f NOISE IN TERMS OF MOBILITY FLUCTUATIONS AND WHITE NOISE IN MODERN SUBMICRON BIPOLAR TRANSISTORS — BJTs AND HBTs

2001 ◽  
Vol 01 (04) ◽  
pp. R175-R199 ◽  
Author(s):  
L. K. J. VANDAMME ◽  
GY. TREFÁN
Keyword(s):  
White Noise ◽  
Empirical Relation ◽  
Cutoff Frequency ◽  
Experimental Studies ◽  
Low Frequency ◽  
Bipolar Transistors ◽  
Corner Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Mobility Fluctuations

Experimental studies on low frequency noise in bipolar junction transistors (BJT) including polysilicon emitter, hetero-junction bipolar transistors (HBTs) and silicon-germanium hetero-junction transistors (SiGe HBTs) are reviewed. The 1/f noise is treated in terms of mobility fluctuations. The validity of a new empirical relation between the 1/f noise corner frequency fc (the frequency where the 1/f noise and shot noise are equal) and the peak cutoff frequency frpeak is investigated. The experimental procedure to investigate the most dominant low-frequency noise source in the equivalent circuit is described. At medium frequencies, the white noise becomes dominant and the noise figure is calculated taking into account the emitter and base series resistance.

Low Frequency Noise Analysis in Advanced CMOS Devices

2011 ◽  
Vol 324 ◽  
pp. 441-444 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo
Keyword(s):  
Experimental Data ◽  
Noise Analysis ◽  
Low Frequency ◽  
Deep Submicron ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
The Impact ◽  
Mobility Fluctuations

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

2000 ◽  
Vol 76 (23) ◽  
pp. 3442-3444 ◽  
Author(s):  
J. A. Garrido ◽  
B. E. Foutz ◽  
J. A. Smart ◽  
J. R. Shealy ◽  
M. J. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Mobility Fluctuations

Low Frequency Noise in 4H-SiC MOSFETs

2009 ◽  
Vol 615-617 ◽  
pp. 817-820 ◽  
Author(s):  
Sergey L. Rumyantsev ◽  
Michael S. Shur ◽  
Michael E. Levinshtein ◽  
Pavel A. Ivanov ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Low Frequency ◽  
Drain Current ◽  
Localized States ◽  
Conduction Band Edge ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Channel Mobility ◽  
Strong Inversion ◽  
First Time

Low-frequency noise in 4H-SiC MOSFETs has been measured for the first time. At drain currents varying from deep subthreshold to strong inversion, the 1/f (flicker) noise dominated at frequencies 1 - 105 Hz. The dependence of relative spectral noise density, , on drain current Id (at a constant drain voltage Vd) differs qualitatively from that in Si MOSFETs. In Si MOSFETs, ~ 1/ in strong inversion, whereas tends to saturate in sub-threshold. In 4H-SiC MOSFETs under study, ~ 1/ over the whole range of currents from deep sub-threshold to strong inversion. Similar noise behavior is often observed in poly- or a-Si TFTs. The effective channel mobility in 4H-SiC MOSFETs, 3 - 7 cm2/Vs, is also as low as that in TFTs. Both noise behavior and transport properties of 4H-SiC MOSFETs are explained, analogously to TFTs, by a high density of localized states (bulk and interface) near the conduction band edge in the ion implanted p-well.

scholarly journals Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
T. Boutchacha ◽  
G. Ghibaudo
Keyword(s):  
Noise Level ◽  
Low Frequency ◽  
Silicon On Insulator ◽  
Excess Noise ◽  
Channel Noise ◽  
Flat Band ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Strong Inversion

Thorough investigations of the low-frequency noise (LFN) in a fully depleted silicon-on-insulator technology node have been accomplished, pointing out on the contribution of the buried oxide (BOX) and the Si-BOX interface to the total drain current noise level. A new analytical multilayer gate stack flat-band voltage fluctuation-based model has been established, and 2D numerical simulations have been carried out to identify the main noise sources and related parameters on which the LFN depends. The increase of the noise at strong inversion could be explained by the access resistance contribution to the 1/f noise. Therefore, considering uncorrelated noise sources in the channel and in the source/drain regions, the total low-frequency noise can simply be obtained by adding to the channel noise the contribution of the excess noise originating from the access region (Δr). Moreover, only two fit parameters are used in this work: the trap volumetric density in the BOX, and the 1/f access noise level originating from the access series resistance, which is assumed to be the same for the front and the back interfaces.

Analysis of noise properties of an optocoupler device

2007 ◽  
Vol 15 (3) ◽  
Author(s):  
A. Konczakowska ◽  
J. Cichosz ◽  
A. Szewczyk ◽  
B. Stawarz
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Random Telegraph Signal ◽  
Signal Noise ◽  
Rts Noise

AbstractIn the paper, localization of a source of random telegraph signal noise (RTS noise) in optocoupler devices of CNY 17 type was defined. The equivalent noise circuit in low frequency noise for these types of optocouplers was proposed.

Statistical Analysis of RTS Noise and Low Frequency Noise in 1M MOSFETs Using an Advanced TEG

2007 ◽  
Author(s):  
K. Abe ◽  
S. Sugawa ◽  
S. Watabe ◽  
N. Miyamoto ◽  
A. Teramoto ◽  
...  
Keyword(s):  
Statistical Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Rts Noise
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