MICROSTRUCTURE STUDY OF ROD-LIKE NANOCRYSTALLINE RUTILE TiO2 SYNTHESIZED BY SONOCHEMICAL METHOD

2004 ◽  
Vol 03 (06) ◽  
pp. 891-896
Author(s):  
J. M. ZHU ◽  
S. S. HUANG ◽  
G. B. MA ◽  
X. H. ZHU ◽  
S. H. ZHOU ◽  
...  

Rutile TiO 2 nanorods have been successfully prepared by a sonochemical method. The microstructures of TiO 2 nanorods were investigated in detail by transmission electron microscopy (TEM), selected area electron diffraction (SAED) and high-resolution transmission electron microscopy (HREM). Probable mechanisms for the sonochemical formation of TiO 2 nanorods are proposed.

2011 ◽  
Vol 189-193 ◽  
pp. 1036-1039
Author(s):  
Jing Ling Ma ◽  
Jiu Ba Wen ◽  
Yan Fu Yan

The precipitates of Al-5Zn-0.02In-1Mg-0.05Ti-0.5Ce (wt %) anode alloy were studied by scanning electron microscopy, X-ray microanalysis, high resolution transmission electron microscopy and selected area electron diffraction analyses in the present work. The results show that the alloy mainly contains hexagonal structure MgZn2 and tetragonal structure Al2CeZn2 precipitates. From high resolution transmission electron microscopy and selected area electron diffraction, aluminium, Al2CeZn2 and MgZn2 phases have [0 1 -1]Al|| [1 -10]Al2CeZn2|| [-1 1 0 1]MgZn2orientation relation, and Al2CeZn2 and MgZn2 phases have the [0 2 -1]Al2CeZn2|| [0 1 -10]MgZn2orientation relation.


2005 ◽  
Vol 475-479 ◽  
pp. 3575-3578
Author(s):  
Zhi Zhong Dong ◽  
Haiyong Gao ◽  
Cheng Shan Xue ◽  
Zhi Hua Dong ◽  
Jian Ting He

Heagonal GaN nanorods have been synthesized through ammoniating ZnO/Ga2O3 films deposited by radio frequency(rf) magnetron sputtering on Si(111) substrates.X-ray diffraction(XRD), Fourier transform infrared spectrophotometer (FTIR), transimission electron microscopy(TEM), high-resolution transmission electron microscopy(HRTEM) and selected-area electron diffraction (SAED) are used to analyze the structure,composition and morphology of the synthesized GaN nanorods. TEM result shows that GaN nanorods own bamboo-shaped morphalogy and have a single-crystal hexagonal wurtzite structure.The average length and dimeter of the nanorods are 3μm and 50 nm espectively.Ga2O3 and NH3 reactived directly and synthesized GaN nanorods without any catalyzer and the process of space-confined reactions.


2005 ◽  
Vol 19 (15n17) ◽  
pp. 2508-2513 ◽  
Author(s):  
JIANMIN ZHU ◽  
SHISONG HUANG ◽  
GUOBIN MA ◽  
NAIBEN MING

By means of sonochemical method, Fe 3 O 4 and ZnFe 2 O 4 nanocrystallines can be synthesized from FeCl 2/ urea and ZnCl 2/ FeCl 2/ urea in water. The products were characterized by powder X-ray diffraction (XRD) and transmission electron microscopy (TEM) as well as selected area electron diffraction (SAED). Special attention was paid to the microstructure of the nanocrystallines using high-resolution transmission electron microscopy (HREM). Probable mechanisms for the sonochemical formation of Fe 3 O 4 and ZnFe 2 O 4 nanocrystallines are discussed.


2016 ◽  
Vol 848 ◽  
pp. 489-493
Author(s):  
Yong Hui Zheng ◽  
Yan Cheng ◽  
Zhi Tang Song ◽  
Wei Jun Yin ◽  
Min Zhu ◽  
...  

By using Zr6.5(Sb2Te3)93.5 film, Te nanowires with a diameter of 5 to 30 nm were fabricated through annealing process. The results of the bright field TEM images, selected area electron diffraction (SAED) and high resolution transmission electron microscopy (HRTEM) demonstrated that the nanowire fitted well with Te hexagonal Te (P3121) structure. The EDS mapping implies that Zr element bonded with Te element and induced the formation of single crystalline Te nanowire during the annealing process.


2000 ◽  
Vol 56 (5) ◽  
pp. 780-784 ◽  
Author(s):  
Franziska E. Rohrer ◽  
Ann-Kristin Larsson

N-Nb2O5 [C2/m (No. 12), a = 28.51, b = 3.830 and c = 17.48 Å, and β = 124.8°] has been investigated by means of selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). N-Nb2O5 is domain twinned, with the twin plane perpendicular to the c* axis. The domains are rather small and the domain twinning can sometimes be best explained as stacking faults. A second type of coherent twinning at an angle of 90° to the other two domain directions was also found. These domains are linked together by areas containing blocks of different sizes, similar to the disordered block arrangement observed in M-Nb2O5.


2009 ◽  
Vol 24 (1) ◽  
pp. 192-197 ◽  
Author(s):  
G.M. Cheng ◽  
Y.X. Tian ◽  
L.L. He

The orientation relationship (OR) and the interfacial structure between Nb solid solution (Nbss) precipitates and α-Nb5Si3 intermetallics have been investigated by transmission electron microscopy (TEM). The OR between Nbss and α-Nb5Si3 was determined by selected-area electron diffraction analyses as (222)Nb//(002)α and . High-resolution TEM images of the Nbss/α-Nb5Si3 interface were presented. Steps existed at the interface that acted as centers of stress concentration and released the distortion of lattices to decrease the interfacial energy. In addition, the interfacial models were proposed based on the observed OR to describe the atomic matching of the interface. The distribution of alloying elements at the Nbss/α-Nb5Si3 interface has also been investigated, and Hf was enriched at the interface to strengthen the grain boundary.


1998 ◽  
Vol 553 ◽  
Author(s):  
C. Reich ◽  
M. Conrad ◽  
F. Krumeich ◽  
B. Harbrecht

AbstractThe dodecagonal (dd) quasicrystalline tantalum telluride dd Ta1.6Te and the crystalline approximant Ta97Te60 have been modified by partly replacing tantalum by vanadium. The impact of the substitution on the structures has been studied by X-ray and electron diffraction and by high-resolution transmission electron microscopy. The layered-type approximant structure of Ta83V14Te60 was determined by single crystal X-ray means. The partitioning of vanadium on 21 out of 29 crystallographically inequivalent metal sites is referred to, but not controlled by the Dirichlet domain volume available at the sites. A HRTEM projection of dd (Ta, V)1.6Te onto the dodecagonal plane is analysed with respect to the arrangement of (Ta, V)151Te74 clusters on the vertices of an irregular aperiodic square-triangle tiling, the edge length of which corresponds to the distance between the centres of two such clusters. The clusters comprise about 1 nm thick corrugated lamellae which are periodically stacked by weak Te-Te interactions.


2018 ◽  
Vol 90 (5) ◽  
pp. 833-844
Author(s):  
Leonid Aslanov ◽  
Valery Zakharov ◽  
Ksenia Paseshnichenko ◽  
Aleksandr Yatsenko ◽  
Andrey Orekhov ◽  
...  

AbstractA new method for synthesis of 2D nanocrystals in water was proposed. The use of perfluorothiophenolate ions as surfactant allowed us to produce 2D single-crystal nanosheets of CaS at pH=9 and flat nanocrystals of PbS at pH=9 at room temperature. Mesocrystalline nanobelts of CdS and mesocrystals of PbS were obtained at pH=3–5 and pH=10–12, respectively. Morphology, structure and chemical composition of nanoparticles were characterized by high-resolution transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy. A mechanism of nanoparticles formation was discussed.


2005 ◽  
Vol 884 ◽  
Author(s):  
Carmen M. Andrei ◽  
John C. Walmsley ◽  
Randi Holmestad ◽  
Gianluigi A. Botton ◽  
Sesha S. Srinivasan ◽  
...  

AbstractTi doped NaAlH4 hydride is proposed as a reversible hydrogen storage material. In this work, the microstructure of NaAlH4 with 2% TiCl3 additive was studied after 5 hydrogen cycles using a combination of transmission electron microscopy (TEM) techniques including energy dispersive spectroscopy (EDS) X-ray analysis. Selected area diffraction and high-resolution (HR) imaging confirmed the presence of the NaH phase in the material. Electron diffraction was dominated by Al. HRTEM showed the presence of edge dislocations, which might influence the hydrogen diffusivity process in these materials.


1993 ◽  
Vol 334 ◽  
Author(s):  
J. Eneva ◽  
S. Kitova ◽  
A Panov ◽  
H. Haefke

AbstractAg2S as a narrow band gap semiconductor is appropriate for photoimaging in the infrared (IR) region. Co-evaporation of Ag and S from two separate sources was used for preparing of thin Ag2S films with different Ag/S ratio. Gelatine subbed glass plates were used as substrates. The structure of the films obtained was examined by transmission electron microscopy and electron diffraction. The effects of chemical composition, film thickness and processing conditions on the photographic parameters were studied.It is shown that after appropriate processing thin Ag2S films with stoichiometric composition can. be successfully used as high resolution (1600 lines/mm) photographic materials in the IR region.


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