Self-Precipitated Process of Te Nanowire from Zr-Doped Sb2Te3 Film
Keyword(s):
By using Zr6.5(Sb2Te3)93.5 film, Te nanowires with a diameter of 5 to 30 nm were fabricated through annealing process. The results of the bright field TEM images, selected area electron diffraction (SAED) and high resolution transmission electron microscopy (HRTEM) demonstrated that the nanowire fitted well with Te hexagonal Te (P3121) structure. The EDS mapping implies that Zr element bonded with Te element and induced the formation of single crystalline Te nanowire during the annealing process.
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