Synthesis and Characterization of Nanocrystalline Ba-doped Mn3O4 Hausmannite Thin Films for Optoelectronic Applications

2021 ◽  
Author(s):  
Aus A. Najim ◽  
Kadhim R. Gbashi ◽  
Ammar T. Salih
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Characteristics ◽  
Optical Transmittance ◽  
Degree Of Crystallinity ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
The Impact

In the present work, nanocrystalline hausmannite Mn3O4:Ba thin films have been deposited on glass substrates by chemical spray pyrolysis (CSP). Then, we investigated the impact of Ba doping concentrations on the structural, morphological and optical properties. The structural characteristics were investigated by X-ray diffraction technique and clearly show the films have a spinel Mn3O4 polycrystalline structure, the degree of crystallinity was improved by increasing Ba concentrations in Mn3O4 matrix with crystallite size range of 15–33[Formula: see text]nm. The lattice parameters, the unit cell volume and the (Mn-O) bond length of tetrahedral and octahedral sites, were varied by increasing Ba concentrations. SEM micrographs show that the films are homogeneous with nanoparticles dispersed on the surface with sizes range 30–132[Formula: see text]nm. The optical properties were estimated by UV-Vis-NIR spectrophotometer and exhibited that the optical transmittance and band gap were improved by increasing Ba doping concentration. Empirical equations were suggested to estimate some correlated variables with excellent agreement with the experimental data. The optimum condition was recorded in films doped with 3% of Ba where a better crystallinity, a preferable surface morphology and outstanding optical properties have been achieved.

Structural, Morphological, Optical, and Electrical Characterization of Fluorine Doped Tin Oxide (FTO) Thin Films Synthesized by PSP

2019 ◽  
Vol 286 ◽  
pp. 64-71 ◽  
Author(s):  
Raquel Ramírez-Amador ◽  
Gregorio Flores-Carrasco ◽  
Salvador Alcántara-Iniesta ◽  
Julio Rodríguez González ◽  
Ogilver García-Teniza ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Visible Region ◽  
Electrical Characterization ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Maximum Value ◽  
Uv Visible

This paper reports a study of Fluorine-doped Tin Oxide (FTO) thin films deposited by the Pneumatic Spray Pyrolysis (PSP) technique. The films were deposited on glass substrates at 450 °C with a ~125 nm thickness, using an F/Sn ratio of 0, 0.2, 0.35, 0.5, 0.65 and 0.85, respectively. The samples were characterized by X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), UV-visible Spectroscopy and Hall Effect techniques, respectively. XRD results revealed that the FTO thin films were polycrystalline with a tetragonal rutile-type structure and had preferential orientations along (110) planes. SEM studies showed that FTO thin film morphology was totally affected by an increased F/Sn ratio. The calculated grain mean sizes were 10-35 nm. Optical transmittance spectra of the films showed a high transparency of approximately 80-90 % in the visible region. The optical gap of FTO thin films was in a 3.70-4.07 eV range. Electrical and optical properties of these films were studied as a function of the F/Sn ratio. Therefore, the optimal FTO (F/Sn = 0.5) films revealed a maximum value of the figure of merit approximately 8.05 × 10-3 (Ω-1) at λ = 400 nm. The high-conducting and transparent-elaborating FTO thin films may have several promising applications due to its multifunctional properties.

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

scholarly journals Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates

CrystEngComm ◽  
2018 ◽  
Vol 20 (20) ◽  
pp. 2861-2867 ◽  
Author(s):  
Yanfang Lou ◽  
Chulho Song ◽  
Yanna Chen ◽  
Loku Singgappulige Rosantha Kumara ◽  
Natalia Palina ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characteristics ◽  
Selective Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Substrates

The structural characteristics of a selective growth GaN substrate were inherited from an Al2O3 substrate and then transferred to homoepitaxial thin films.

LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Glass Substrates ◽  
Corning Glass ◽  
Different Temperatures ◽  
Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

Production and Characterization of Carbon Thin Films by the Magnetron Sputtering Technique

2016 ◽  
Vol 881 ◽  
pp. 471-474 ◽  
Author(s):  
D.L.C. Silva ◽  
L.R.P Kassab ◽  
J.R. Martinelli ◽  
A.D. Santos ◽  
M.F. Pillis
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Magnetron Sputtering ◽  
Carbon Film ◽  
Carbon Films ◽  
Buffer Layers ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Carbon Thin Films

Carbon thin films were produced by the magnetron sputtering technique. The deposition of the carbon films was performed on Co buffer-layers previously deposited on c-plane (0001) sapphire substrates. The samples were thermally treated under vacuum conditions and characterized by Raman spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The XRD peak related to the carbon film was observed and the Raman spectroscopy indicated a good degree of crystallinity of the carbon film.

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

Effect of Second Complexing Agent of N2H4 on the Optical and Structural Properties of ZnS Thin Films

2013 ◽  
Vol 591 ◽  
pp. 297-300
Author(s):  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang ◽  
Xiao Yan Fei
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Properties ◽  
Band Gaps ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Sphalerite Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Zns Films

ZnS films have been deposited on glass substrates by chemical bath deposition (CBD). The optical and structural properties were analyzed by UV-VIS spectrophotometer and X-ray diffraction (XRD). The results showed that the prepared thin films from the solution using N2H4 as second complexing agent were thicker than those from the solution without adding N2H4 in; this is due to using second complexing agent of N2H4, the deposition mechanisms change which is conductive to heterogeneous deposition. When using N2H4 as second complexing agent, the crystallinity of ZnS thin films improved with a significant peak at 2θ=28.96°which can be assigned to the (111) reflection of the sphalerite structure. The transmittances of the prepared films from the solution adding N2H4 in as second complexing agent were over 85%, compared to those from the solution without N2H4 (over 95%). The band gaps of the ZnS films from the solution using N2H4 as second complexing agent were larger (about 4.0eV) than that from those from the solution without N2H4 (about 3.98eV), which indicated that the prepared ZnS films from the solution adding N2H4 in as second complexing agent were better used as buffer layer of solar cells with adequate optical properties. In short, using N2H4 as second complexing agent, can greatly improve the optical and structural properties of the ZnS thin films.

Effect of Different Radios of Two Complexes on the Structural and Optical Properties of ZnS Thin Films

2014 ◽  
Vol 986-987 ◽  
pp. 47-50
Author(s):  
Jin Shang ◽  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Visible Region ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
High Concentration ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Direct Band ◽  
Cbd Method

ZnS thin films were deposited at three different radios of V(NH3·H2O)/V(N2H4) on glass substrates by chemical bath deposition (CBD) method without stirring the deposition bath during the deposition process. The structural and optical properties were analyzed by X-ray diffraction (XRD) and UV-VIS spectrophotometer. The results showed that ZnS thin film deposited at the radio of V(NH3·H2O)/V(N2H4)=15:15 is higher than that of the other two different solutions. With the radio of V(NH3·H2O)/V(N2H4) decreasing from 15:5 to 15:15, homogenous precipitation of Zn (OH)2easily forms in the bath, but ZnS precipitation first become suppressed and then easily forms in solution. It means that the concentration of OH-ion increases with the volume of N2H4increasing, which accelerates the formation of Zn (OH)2. However, when the volume of N2H4increases to 15mL, relatively high concentration of OH-ion not only accelerates the formation of Zn (OH)2, but also be used to the hydrolysis of thiourea. The average transmissions of all the ZnS films from three different solutions (V(NH3·H2O)/V(N2H4)=15:5, 15:10 and 15:15) are greater than 90% for wavelength values in visible region. The direct band gaps range from 3.80 to 4.0eV. The ZnS film deposited for 2.5h with the radio of V(NH3·H2O)/V(N2H4)=15:15 has the cubic structure only after single deposition.

Thermoelectric Characterization of Direct Current Magnetron Co-Sputtering Zinc Antimonide Thin Films

2013 ◽  
Vol 734-737 ◽  
pp. 2559-2562
Author(s):  
Ying Zhen Li ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Peng Juan Liu ◽  
Qing Yun Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Zinc Antimonide ◽  
Β Phase ◽  
Bk7 Glass ◽  
Diffraction Peaks

Direct current magnetron co-sputtering was used to deposit zinc antimonide thin films on BK7 glass substrates at room-temperature. Then the films were annealed at 573 K to 673 K for 1 hour in Ar atmosphere. The results indicate that the Seebeck coefficient of the thin films increase from 30.5 μVK-1to 132.5 μVK-1 when the annealing temperature changed. The electrical conductivity of the thin films increases from 3.45×103 to 6.86×103 Sm-1 and the Power Factor is enhanced greatly from 0.03×10-4 to 0.99×10-4 Wm-1K-2 when the annealing temperature reached 598 K. X-ray diffraction result shows that the major diffraction peaks of the thin films match those of β phase Zn4Sb3 and high crystalline thin films are achieved after annealing.

Optical Characteristics of Tungsten Oxide Thin Films Prepared by Sputtering Technique

2010 ◽  
Vol 295-296 ◽  
pp. 11-17
Author(s):  
S.A. Aly
Keyword(s):  
Optical Properties ◽  
Tungsten Oxide ◽  
Energy Gap ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
Remarkable Change ◽  
X Ray ◽  
Glass Substrates ◽  
Tungsten Oxide Thin Films ◽  
Reflectance Measurements

The optical properties of tungsten oxide (WO3) films prepared by DC sputtering on unheated glass substrates with different film thicknesses have been studied. The structural characteristics of the samples were investigated using X-ray diffraction. The optical properties of the prepared films were studied by transmittance and reflectance measurements, and the integrated transmittance (TUV, TVIS, and TNIR) and absorption (AUV, AVIS, and ANIR) in UV, VIS and NIR regions. The integrated UV absorption and transmittance are varied with the film thicknesses, also, no remarkable change in VIS and NIR regions was observed. The dependence of refractive index as well as extinction coefficient on wavelength was also reported. The energy gap was calculated and is located around 3.25 eV.

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