Uniform DNA Biosensors Based on Threshold Voltage of Carbon Nanotube Thin-Film Transistors

NANO ◽  
2016 ◽  
Vol 11 (05) ◽  
pp. 1650060 ◽  
Author(s):  
Yanyan Deng ◽  
Min Zhang ◽  
Fang Yuan ◽  
Zigang Li ◽  
Wenyu Zhou

Uniformity is a key parameter to assure the accuracy of biosensor devices. In this work, highly uniform carbon nanotube thin-film transistors (CNT-TFTs) with a standard deviation of threshold voltage ([Formula: see text]) as small as 0.04 were achieved by accurately controlling the fabrication process, which is so far the most stable distribution to our knowledge. On-state current ([Formula: see text]), off-state current and on/off current ratio also exhibit high uniformity with low standard deviation of 0.50, 0.72 and 0.54, respectively. Given the high uniformity, high stability and high sensitivity, the CNT-TFTs are used as ultra-sensitive 5-hydroxymethyl cytosine (5-hmC) detecting devices for the first time, which is one of the important modified bases in DNA and plays an important role in epigenetics. After attachment of 5-hmC DNA, a reproducible and stable shift of 18.7–59% in [Formula: see text] as well as a 31–54% change in [Formula: see text] were observed in the transfer characteristics curves of CNT-TFTs. Thus, a detecting device of 5-hmC in DNA segments could be designed based on the highly uniform CNT-TFTs.

Nano Research ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 4356-4367 ◽  
Author(s):  
Guodong Dong ◽  
Jie Zhao ◽  
Lijun Shen ◽  
Jiye Xia ◽  
Hu Meng ◽  
...  

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Xiangheng Xiao ◽  
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Zhiyong Fan ◽  
...  

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pp. 055102 ◽  
Author(s):  
Hideaki Numata ◽  
Kazuki Ihara ◽  
Takeshi Saito ◽  
Hiroyuki Endoh ◽  
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pp. 192-198 ◽  
Author(s):  
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Yutaka Abe ◽  
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Seiya Kobayashi ◽  
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...  

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Author(s):  
Man Prakash Gupta ◽  
Ashkan Behnam ◽  
Feifei Lian ◽  
David Estrada ◽  
Eric Pop ◽  
...  

Author(s):  
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Micromachines ◽  
2021 ◽  
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Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.


2000 ◽  
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pp. 2442-2444 ◽  
Author(s):  
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J. Brini ◽  
G. Kamarinos ◽  
...  

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