Effect of Dual Radio Frequency Bias Power on SiO2 Sputter Etching in Inductively Coupled Plasma

NANO ◽  
2017 ◽  
Vol 12 (02) ◽  
pp. 1750025 ◽  
Author(s):  
Haegyu Jang ◽  
Heeyeop Chae
Keyword(s):  
Radio Frequency ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Ion Bombardment ◽  
Ion Density ◽  
Source Power ◽  
Inductively Coupled ◽  
Bombardment Energy ◽  
The Relationship ◽  
Sputter Etching

Dual radio frequency (RF) powers are widely used with commercial plasma etchers for various nanoscale patterns. However, it is challenging to understand the relationship among the dual RF powers and the etching processes. In this work, the effect of the dual RF bias powers on SiO2 sputter etching was investigated in inductively coupled plasma (ICP). The relationship was studied among 2[Formula: see text]MHz and 27.12[Formula: see text]MHz RF bias powers, a 13.56[Formula: see text]MHz ICP source power, the ion bombardment energy, the ion density and the etching rate. The results show that the ion density of Ar plasma can be controlled in the region of 109–10[Formula: see text] ions/cm3, and DC self-bias can be controlled by controlling the ratio of dual RF bias powers while the ion density is maintained with the operation of source power. This work reveals that the dual RF bias powers expand the process window of the ion density and the ion bombardment energy independently in the ICP plasma source. The sputter etching rate is also modeled using the ion-enhanced etching model, and the model shows good agreement with the etching rate data.

Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz rf-Biased Inductively Coupled Plasma

SPIN ◽  
2018 ◽  
Vol 08 (02) ◽  
pp. 1850002 ◽  
Author(s):  
Chuankun Han ◽  
Yiyong Yang ◽  
Weifeng Liu ◽  
Yijia Lu ◽  
Jia Cheng
Keyword(s):  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Deposition Process ◽  
Ion Flux ◽  
Etching Process ◽  
Current Ratio ◽  
Bias Power ◽  
Source Power ◽  
Inductively Coupled ◽  
Sputter Etching

Inductively coupled plasma (ICP) has been widely used in semiconductor manufacturing, especially in nanoscale etching and deposition process. It is important to understand the relationship among the 13.56[Formula: see text]MHz rf-biased power and the etching process. In this study, the effect of dual rf power on the SiO2 sputter etching is investigated by measuring the ion energy distributions (IEDs), ion flux and sputter etching rate. The results show that the IEDs transforms from uni-modal towards bi-modal distribution when rf-biased power is applied to electrode. The influence of source power, bias power, discharge pressure and current ratio on the ion flux, IEDs are investigated in detail. The energy separations measured by RFEA are in good agreement with analytical model. The ion flux can be modulated by the 13.56[Formula: see text]MHz rf-biased power. Moreover, the coil current ratio expands the control window of the ion bombardment energy for the ICP etch equipment while. Finally, an ion-enhanced etching model is introduced to obtain the sputter etching rate and reveals the influence of discharge conditions on the etch rate.

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing

1998 ◽  
Vol 510 ◽  
Author(s):  
T. Maeda ◽  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias

AbstractThe effects of Inductively Coupled Plasma (ICP) and Electron Cyclotron Resonance (ECR) H2 plasmas on GaAs metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have been measured as a function of ion flux, ion energy and process pressure. The chemical effects of hydrogenation have been compared to direct physical bombardment by Ar plasmas under the same conditions. Si dopant passivation in MESFETs and HEMTs and C base-dopant passivation in HBTs produces much larger changes in sheet resistance, breakdown voltage and device gain or transconductance than Ar ion bombardment and suggests that H2-containing plasma chemistries (CH4/H2 for semiconductor etching, SiH4 for dielectric deposition, CHF3 for dielectric etching) should be avoided, or at least the exposure of the surface minimized. In some cases the device degradation is less for higher source power conditions, due to the suppression of cathode dc self-bias and hence ion energy.

Unitary Micro-Patterning Structure-Induced Hydrophobic Silicon Surface

2011 ◽  
Vol 239-242 ◽  
pp. 2524-2527
Author(s):  
Si Si Liu ◽  
Chao Hui Zhang ◽  
Han Bing Zhang
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Surface ◽  
Scale Effects ◽  
Silicon Surfaces ◽  
Functional Surface ◽  
Inductively Coupled ◽  
Cassie State ◽  
Micro Patterning ◽  
Pillar Arrays ◽  
The Relationship

The relationship between the wettability and the roughness structure on silicon surface is studied. The unitary microscale square pillar arrays are fabricated by the way of inductively coupled plasma (ICP). The wettability of water droplets on the silicon surface is changed from hydrophilic to hydrophobic only by introducing microscale pillarlike structure. Furthermore, the scale effects of the unitary rough structure on hydrophobicity are investigated. For those silicon surfaces with a fixed pillar height, the relatively larger scale of grooves leads the droplets wettability state to unstable Cassie state and the contact angle will initially get larger and then decrease with the increase of groove width. The research could provide further insights into the design of functional surface with controllable roughness-induced hydrophobic.

scholarly journals Revisiting carbonate chemistry controls on planktic foraminifera Mg /  Ca: implications for sea surface temperature and hydrology shifts over the Paleocene–Eocene Thermal Maximum and Eocene–Oligocene transition

2016 ◽  
Vol 12 (4) ◽  
pp. 819-835 ◽  
Author(s):  
David Evans ◽  
Bridget S. Wade ◽  
Michael Henehan ◽  
Jonathan Erez ◽  
Wolfgang Müller
Keyword(s):  
Laser Ablation ◽  
Inductively Coupled Plasma ◽  
Data Sets ◽  
Carbonate Chemistry ◽  
Surface Hydrology ◽  
Planktic Foraminifera ◽  
Inductively Coupled ◽  
Accurate Picture ◽  
Thermal Maximum ◽  
The Relationship

Abstract. Much of our knowledge of past ocean temperatures comes from the foraminifera Mg / Ca palaeothermometer. Several nonthermal controls on foraminifera Mg incorporation have been identified, of which vital effects, salinity, and secular variation in seawater Mg / Ca are the most commonly considered. Ocean carbonate chemistry is also known to influence Mg / Ca, yet this is rarely examined as a source of uncertainty, either because (1) precise pH and [CO32−] reconstructions are sparse or (2) it is not clear from existing culture studies how a correction should be applied. We present new culture data of the relationship between carbonate chemistry and Mg / Ca for the surface-dwelling planktic species Globigerinoides ruber and compare our results to data compiled from existing studies. We find a coherent relationship between Mg / Ca and the carbonate system and argue that pH rather than [CO32−] is likely to be the dominant control. Applying these new calibrations to data sets for the Paleocene–Eocene Thermal Maximum (PETM) and Eocene–Oligocene transition (EOT) enables us to produce a more accurate picture of surface hydrology change for the former and a reassessment of the amount of subtropical precursor cooling for the latter. We show that pH-adjusted Mg / Ca and δ18O data sets for the PETM are within error of no salinity change and that the amount of precursor cooling over the EOT has been previously underestimated by  ∼ 2 °C based on Mg / Ca. Finally, we present new laser-ablation data of EOT-age Turborotalia ampliapertura from St. Stephens Quarry (Alabama), for which a solution inductively coupled plasma mass spectrometry (ICPMS) Mg / Ca record is available (Wade et al., 2012). We show that the two data sets are in excellent agreement, demonstrating that fossil solution and laser-ablation data may be directly comparable. Together with an advancing understanding of the effect of Mg / Casw, the coherent picture of the relationship between Mg / Ca and pH that we outline here represents a step towards producing accurate and quantitative palaeotemperatures using this proxy.

Comparison of external and internal planar radio frequency antennae for inductively coupled plasma

1997 ◽  
Vol 68 (6) ◽  
pp. 2381-2383 ◽  
Author(s):  
K. Eng ◽  
K. Strohmaier ◽  
R. Palmer ◽  
B. Stoner ◽  
S. Washburn
Keyword(s):  
Radio Frequency ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled

Plasma and electrical characteristics depending on an antenna position in an inductively coupled plasma with a passive resonant antenna

2021 ◽  
Author(s):  
Ju Ho Kim ◽  
Chin-Wook Chung
Keyword(s):  
Inductively Coupled Plasma ◽  
Metal Plate ◽  
Electrical Characteristics ◽  
Coupling Loss ◽  
Rf Power ◽  
Ion Density ◽  
Electron Kinetics ◽  
Inductively Coupled ◽  
Cylindrical Reactor ◽  
Antenna Position

Abstract We investigated the plasma and electrical characteristics depending on the antenna position in an inductively coupled plasma with a passive resonant antenna. When the powered antenna and passive resonant antenna are installed near the top plate and in the middle of the cylindrical reactor (Setup A), respectively, the ion density at the resonance is about 2.4 times to 9 times higher than that at non-resonance. This is explained by the reduction in power loss in the powered antenna (including the matching circuits) and the increase in power absorbed by the plasma discharge. However, when the powered antenna and passive resonant antenna are interchanged (Setup B), the ion density at the resonance is not significantly different from that at the non-resonance. When RF power is changed from 50 W to 200 W, the ion density at the resonance of Setup B is 1.6 times to 5.4 times higher than at the non-resonance of Setup A. To analyse this difference, the profile of the z-axis ion density is measured and the electric and magnetic field simulations are investigated. The results are discussed along with the electron kinetics effect and the coupling loss between the antenna and the metal plate.

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