Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz rf-Biased Inductively Coupled Plasma

SPIN ◽  
2018 ◽  
Vol 08 (02) ◽  
pp. 1850002 ◽  
Author(s):  
Chuankun Han ◽  
Yiyong Yang ◽  
Weifeng Liu ◽  
Yijia Lu ◽  
Jia Cheng
Keyword(s):  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Deposition Process ◽  
Ion Flux ◽  
Etching Process ◽  
Current Ratio ◽  
Bias Power ◽  
Source Power ◽  
Inductively Coupled ◽  
Sputter Etching

Inductively coupled plasma (ICP) has been widely used in semiconductor manufacturing, especially in nanoscale etching and deposition process. It is important to understand the relationship among the 13.56[Formula: see text]MHz rf-biased power and the etching process. In this study, the effect of dual rf power on the SiO2 sputter etching is investigated by measuring the ion energy distributions (IEDs), ion flux and sputter etching rate. The results show that the IEDs transforms from uni-modal towards bi-modal distribution when rf-biased power is applied to electrode. The influence of source power, bias power, discharge pressure and current ratio on the ion flux, IEDs are investigated in detail. The energy separations measured by RFEA are in good agreement with analytical model. The ion flux can be modulated by the 13.56[Formula: see text]MHz rf-biased power. Moreover, the coil current ratio expands the control window of the ion bombardment energy for the ICP etch equipment while. Finally, an ion-enhanced etching model is introduced to obtain the sputter etching rate and reveals the influence of discharge conditions on the etch rate.

Effect of Dual Radio Frequency Bias Power on SiO2 Sputter Etching in Inductively Coupled Plasma

NANO ◽  
2017 ◽  
Vol 12 (02) ◽  
pp. 1750025 ◽  
Author(s):  
Haegyu Jang ◽  
Heeyeop Chae
Keyword(s):  
Radio Frequency ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Ion Bombardment ◽  
Ion Density ◽  
Source Power ◽  
Inductively Coupled ◽  
Bombardment Energy ◽  
The Relationship ◽  
Sputter Etching

Dual radio frequency (RF) powers are widely used with commercial plasma etchers for various nanoscale patterns. However, it is challenging to understand the relationship among the dual RF powers and the etching processes. In this work, the effect of the dual RF bias powers on SiO2 sputter etching was investigated in inductively coupled plasma (ICP). The relationship was studied among 2[Formula: see text]MHz and 27.12[Formula: see text]MHz RF bias powers, a 13.56[Formula: see text]MHz ICP source power, the ion bombardment energy, the ion density and the etching rate. The results show that the ion density of Ar plasma can be controlled in the region of 109–10[Formula: see text] ions/cm3, and DC self-bias can be controlled by controlling the ratio of dual RF bias powers while the ion density is maintained with the operation of source power. This work reveals that the dual RF bias powers expand the process window of the ion density and the ion bombardment energy independently in the ICP plasma source. The sputter etching rate is also modeled using the ion-enhanced etching model, and the model shows good agreement with the etching rate data.

Low Bias Dry Etching of Sic and Sicn in ICP NF3 Discharges

1998 ◽  
Vol 512 ◽  
Author(s):  
J. J. Wang ◽  
Hyun Cho ◽  
E. S. Lambers ◽  
S. J. Peartont ◽  
M. Ostling ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Flux ◽  
Pattern Transfer ◽  
Plasma Composition ◽  
Source Power ◽  
Ion Energy ◽  
Trade Off ◽  
Inductively Coupled ◽  
Extensive Surface ◽  
Etch Rates

ABSTRACTA parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.8N0.2 in Inductively Coupled Plasma NF3/O2 and NF3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power reaching 3500Å·min−1 for SiC and 7500 Å·min−1 for SiCN. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tinoxide( ITO) masks display relatively good etch selectivity over SiC(maximum of 70:1) while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions. The high ion flux available in the ICP tool allows etching even at very low dc self-biases, ≤ −10V, leading to very low damage pattern transfer.

Plasma Etching for the Application to Low-K Dielectrics Devices

2007 ◽  
Vol 555 ◽  
pp. 113-118
Author(s):  
Jong Woo Lee ◽  
Hyoun Woo Kim ◽  
Jeong Whan Han ◽  
Mok Soon Kim ◽  
Byung Don Yoo ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
Etching Rate ◽  
Flow Ratio ◽  
Ferrite Core ◽  
Bias Power ◽  
Inductively Coupled ◽  
Gas Flow Ratio ◽  
Dielectric Devices ◽  
Low K

We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.

The Effect of Bias Power on the Etching Rate and Uniformity of Silicon Dioxide for N-Slot Inductively Coupled Plasma in TFT Application

2007 ◽  
Vol 124-126 ◽  
pp. 291-294
Author(s):  
Che Hung Wei ◽  
Yu Hung Chen
Keyword(s):  
Inductively Coupled Plasma ◽  
Film Growth ◽  
Etching Rate ◽  
Thin Film Transistor ◽  
Large Area ◽  
Bias Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
High Etching Rate ◽  
Moderate Range

The etching in SiO2 is a crucial step in fabricating thin film transistor. For large area etching, high density plasma which independently controls ion energy and ion flux is preferable than conventional RIE etcher for its high etching capability. In an attempt to understand how the bias power of N-slot ICP affects the etching rate and uniformity, we study the correlation among bias power, inductive power, etching rate and uniformity. The results show that the etching rate is proportional to the bias power up to 800 W which has the best uniformity. Beyond that power, the etching rate enters the different slope and the uniformity become worse. This phenomenon might be attributed to the combined effects of resist etching and polymer film growth. For N-slot ICP system, high etching rate and good uniformity can be obtained only when the bias power is in the moderate range.

scholarly journals Selective and Anisotropic Dry Etching of Ge over Si

2013 ◽  
Vol 8 (2) ◽  
pp. 104-109 ◽  
Author(s):  
Marcelo S. B. Castro ◽  
Sebastien Barnola ◽  
Barbara Glück
Keyword(s):  
Inductively Coupled Plasma ◽  
Gas Flow ◽  
High Selectivity ◽  
Zero Bias ◽  
Bias Power ◽  
Source Power ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Reactive Gases ◽  
Etch Profile

Inductively coupled plasma (ICP) etching of Ge with high selectivity over Si and anisotropic etched profiles using CF4, HBr, SF6, and Cl2 reactive gases has been studied. Because pressure and biased power should be the most important parameters to drive selectivity and etch profile, they were varied from 4 to 50 mTorr and from 0 to 50 W, respectively, so as to investigate their influence on process. Total gas flow (100 sccm) and source power (350 W) were initially held constant. Selectivity greater than 100:1 of Ge over Si was achieved using 100 % Cl2 etch gas at 50 mTorr and zero bias power but the profile of the etched features was isotropic. With the addition of N2 to the feed gas (Cl2) the profile became more anisotropic. A three steps ICP etch process was developed with a final Ge/Si etch selectivity of 5:1 and anisotropic profiles.

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing

1998 ◽  
Vol 510 ◽  
Author(s):  
T. Maeda ◽  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias

AbstractThe effects of Inductively Coupled Plasma (ICP) and Electron Cyclotron Resonance (ECR) H2 plasmas on GaAs metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have been measured as a function of ion flux, ion energy and process pressure. The chemical effects of hydrogenation have been compared to direct physical bombardment by Ar plasmas under the same conditions. Si dopant passivation in MESFETs and HEMTs and C base-dopant passivation in HBTs produces much larger changes in sheet resistance, breakdown voltage and device gain or transconductance than Ar ion bombardment and suggests that H2-containing plasma chemistries (CH4/H2 for semiconductor etching, SiH4 for dielectric deposition, CHF3 for dielectric etching) should be avoided, or at least the exposure of the surface minimized. In some cases the device degradation is less for higher source power conditions, due to the suppression of cathode dc self-bias and hence ion energy.

Improved Deposition Process of CVD-(Ba,Sr)TiO3 on Ru

2000 ◽  
Vol 655 ◽  
Author(s):  
M. Tarutani ◽  
T. Sato ◽  
M. Yamamuka ◽  
T. Kawahara ◽  
T. Horikawa ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Inductively Coupled Plasma ◽  
Deposition Process ◽  
Molar Ratio ◽  
Inductively Coupled ◽  
Icp Ms ◽  
Plasma Mass Spectrometry ◽  
Bst Films ◽  
20 Nm ◽  
Uniform Composition

Abstract(Ba,Sr)TiO3 [BST] films were deposited by the flash vaporization CVD method with a unique liquid delivery system. An inductively coupled plasma mass spectrometry [ICP-MS] analysis revealed the decline of (Ba+Sr)/Ti molar ratio of the initial BST-layer on Ru. By readjusting the flow ratio of liquid sources and using a two-step deposition method, we obtained 30-nm-thick BST films with uniform composition profile, exhibiting good electrical properties. The leakage property, however, was severely deteriorated in BST films less than 24 nm thick. A SEM observation showed the presence of micro-roughness or micro-hillocks in these films, which were confirmed to be caused by Ru oxidation. Therefore, an annealing process of the Ru electrode was added for its planarization, and the CVD process was also improved. As a result, we obtained smooth and finely crystallized ∼ 20-nm-thick BST films with good electrical properties of equivalent SiO2 thickness (teq) ∼ 0.45 nm and leakage current < 1 × 10−7 A/cm2. We also measured properties of BST films deposited on the 3-D Ru electrode. The results are briefly discussed.

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