scholarly journals THE CONTRIBUTION OF ELECTRICAL CONDUCTIVITY, DIELECTRIC PERMITTIVITY AND DOMAIN SWITCHING IN FERROELECTRIC HYSTERESIS LOOPS

2011 ◽  
Vol 01 (01) ◽  
pp. 107-118 ◽  
Author(s):  
HAIXUE YAN ◽  
FAWAD INAM ◽  
GIUSEPPE VIOLA ◽  
HUANPO NING ◽  
HONGTAO ZHANG ◽  
...  
Keyword(s):  
Dielectric Permittivity ◽  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Domain Switching ◽  
Ferroelectric Properties ◽  
Electric Displacement ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Ferroelectric Hysteresis ◽  
Current Electric Field

Triangular voltage waveform was employed to distinguish the contributions of dielectric permittivity, electric conductivity and domain switching in current-electric field curves. At the same time, it is shown how those contributions can affect the shape of the electric displacement — electric field loops (D–E loops). The effects of frequency, temperature and microstructure (point defects, grain size and texture) on the ferroelectric properties of several ferroelectric compositions is reported, including: BaTiO 3; lead zirconate titanate (PZT); lead-free Na 0.5 K 0.5 NbO 3; perovskite-like layer structured A 2 B 2 O 7 with super high Curie point (T c ); Aurivillius phase ferroelectric Bi 3.15 Nd 0.5 Ti 3 O 12; and multiferroic Bi 0.89 La 0.05 Tb 0.06 FeO 3. This systematic study provides an instructive outline in the measurement of ferroelectric properties and the analysis and interpretation of experimental data.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

A polycrystal hysteresis model for ferroelectric ceramics

2006 ◽  
Vol 462 (2069) ◽  
pp. 1573-1592 ◽  
Author(s):  
Y Su ◽  
G.J Weng
Keyword(s):  
Electric Field ◽  
Hysteresis Loop ◽  
Ferroelectric Properties ◽  
Electric Displacement ◽  
Hysteresis Loops ◽  
Ferroelectric Ceramics ◽  
Domain Growth ◽  
Thermodynamic Approach ◽  
Hysteresis Model ◽  
Self Consistent

Most key elements of ferroelectric properties are defined through the hysteresis loops. For a ferroelectric ceramic, its loop is contributed collectively by its constituent grains, each having its own hysteresis loop when the ceramic polycrystal is under a cyclic electric field. In this paper, we propose a polycrystal hysteresis model so that the hysteresis loop of a ceramic can be calculated from the loops of its constituent grains. In this model a micromechanics-based thermodynamic approach is developed to determine the hysteresis behaviour of the constituent grains, and a self-consistent scheme is introduced to translate these behaviours to the polycrystal level. This theory differs from the classical phenomenological ones in that it is a micromechanics-based thermodynamic approach and it can provide the evolution of new domain concentration among the constituent grains. It also differs from some recent micromechanics studies in its secant form of self-consistent formulation and in its application of irreversible thermodynamics to derive the kinetic equation of domain growth. To put this two-level micromechanics theory in perspective, it is applied to a ceramic PLZT 8/65/35, to calculate its hysteresis loop between the electric displacement and the electric field ( D versus E ), and the butterfly-shaped longitudinal strain versus the electric field relation ( ϵ versus E ). The calculated results are found to be in good quantitative agreement with the test data. The corresponding evolution of new domain concentration c 1 and the individual hysteresis loops of several selected grains—along with those of the overall polycrystal—are also illustrated.

Uniaxial Compressive Stress Dependence of the High-Field Dielectric and Piezoelectric Performance of Soft PZT Piezoceramics

2004 ◽  
Vol 19 (3) ◽  
pp. 834-842 ◽  
Author(s):  
Dayu Zhou ◽  
Marc Kamlah ◽  
Dietrich Munz
Keyword(s):  
Electric Field ◽  
Lead Zirconate Titanate ◽  
Domain Switching ◽  
Lead Zirconate ◽  
Transverse Strain ◽  
Dissipation Energy ◽  
Depolarization Effect ◽  
Uniaxial Compressive Stress ◽  
Piezoelectric Performance ◽  
Electromechanical Load

The influence of uniaxial prestress on dielectric and piezoelectric performance was studied for soft lead zirconate titanate piezoceramics. High electric field induced polarization and longitudinal/transverse strain were measured at different compression preload levels of up to −400 MPa. The parameters evaluated included polarization/strain outputs, dielectric permittivity, piezoelectric constants, and dissipation energy as a function of the mechanical preload and electric-field strength. The results indicate a significant enhancement of the dielectric and piezoelectric performance within a certain prestress loading range. At much higher stress levels, the predominant mechanical depolarization effect makes the material exhibit hardly any piezoeffect. However, the enhanced performance achieved by a small stress preload is accompanied by an unfavorable increased hysteresis, and consequently, increased energy loss, which is attributed to a larger extrinsic contribution due to more non-180° domain switching induced by the combined electromechanical load.

Crack tip 90° domain switching in tetragonal lanthanum-modified lead zirconate titanate under an electric field

1999 ◽  
Vol 14 (7) ◽  
pp. 2940-2944 ◽  
Author(s):  
Fei Fang ◽  
Wei Yang ◽  
Ting Zhu
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Lead Zirconate Titanate ◽  
Powder Processing ◽  
Domain Switching ◽  
Crack Tip ◽  
Lead Zirconate ◽  
Processing Technique ◽  
Ferroelectric Ceramics ◽  
Zirconate Titanate

Lanthanum-modified lead zirconate titanate ferroelectric ceramics (Pb0.96La0.04)(Zr0.40Ti0.60)0.99O3 were synthesized by the conventional powder processing technique. X-ray diffraction experiments revealed that the samples belong to the tetragonal phase with a = b = 0.4055 nm, c = 0.4109 nm, and c/a = 1.013. After being poled, the samples were indented with a 5-kg Vickers indenter, and lateral electric fields of 0.4 Ec, 0.5 Ec, and 0.6 Ec (Ec = 1100 V/mm) were applied, respectively. Field-emission scanning electron microscopy showed that 90° domain switching appeared near the tip of the indentation crack under a lateral electric field of 0.6 Ec. A mechanism of 90° domain switching near the crack tip under an electric field is discussed.

Variation of Material Properties of Piezoelectric Ceramics due to Electric Loading Evaluated by Resonance Frequency

2007 ◽  
Vol 345-346 ◽  
pp. 1521-1524 ◽  
Author(s):  
Mamoru Mizuno ◽  
Nozomi Odagiri ◽  
Mitsuhiro Okayasu
Keyword(s):  
Electric Field ◽  
Resonance Frequency ◽  
Lead Zirconate Titanate ◽  
Material Properties ◽  
Electromechanical Coupling ◽  
Domain Switching ◽  
Piezoelectric Ceramics ◽  
Lead Zirconate ◽  
Electromechanical Coupling Coefficient ◽  
Resonance Frequencies

In the present paper, lead zirconate titanate (PZT) and lead titanate (PT) piezoelectric ceramics were subjected to both high electric field (which is higher than the coercive electric field) with low frequency and low electric field with high frequency (which is the resonance frequency). After applying certain electric field systematically, resonance and anti-resonance frequencies and an electrostatic capacity were measured by means of an impedance analyzer, and an electromechanical coupling coefficient, a dielectric constant, an elastic coefficient and a piezoelectric constant were evaluated from the frequencies and capacity measured. Then variation of the material properties in process of time was investigated experimentally, and the dependence of the variation of the properties due to mainly domain switching on conditions of applied electric field was elucidated.

Modeling of electric field induced texture in lead zirconate titanate ceramics

2001 ◽  
Vol 16 (8) ◽  
pp. 2306-2313 ◽  
Author(s):  
Shan Wan ◽  
Keith Bowman
Keyword(s):  
Electric Field ◽  
Interaction Energy ◽  
Lead Zirconate Titanate ◽  
Domain Switching ◽  
Texture Evolution ◽  
Threshold Energy ◽  
Lead Zirconate ◽  
Ferroelectric Ceramics ◽  
Domain Orientation ◽  
Zirconate Titanate

Preferred domain orientation of a piezoelectric ceramic develops through domain switching under electric poling. In previous investigations the critical free energy required for domain switching has been assumed as a constant. This assumption leads to overestimation of the poling-induced texture and provides no explanation for the switching reversal in ferroelectric ceramics after the poling field is removed. In this paper, the contribution of intergranular stress to critical energy for 90° domain switching is investigated. A criterion including intrinsic threshold energy and an interaction energy, which is related to the intergranular stress and the intergranular depolarization field, is proposed. The texture evolution during poling process is simulated using a computational model starting from an initial random domain orientation distribution. The resulted domain orientation distributions under and after poling are predicted. The remanent domain switching after poling is the result of the balance between the interaction energy and intrinsic threshold energy. The final texture is much weaker than that under the electric field. Pole figures of poled Navy VI lead zirconate titanate measured by x-ray diffraction are consistent with the predicted textures.

scholarly journals Ferroelectric and Dielectric Properties of ZnFe2O4-Pb(ZrTi)O3Multiferroic Nanocomposites

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Shrabanee Sen ◽  
Sk. Md. Mursalin ◽  
M. Maharajan
Keyword(s):  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
Nanosized Powders ◽  
X Ray ◽  
Magnetoelectric Composites ◽  
Gel Technique

Magnetoelectric composites of zinc ferrite and soft lead zirconate titanate (PZT) having formula 0.5 ZnFe2O4-0.5 PZT were synthesized by sol-gel technique. X-ray diffraction analysis was carried out to confirm the coexistence of individual phase. TEM micrographs were taken to confirm the formation of nanosized powders and SEM micrographs were taken to study the morphology of the sintered pellets. Dielectric and P-E hysteresis loops were recorded, respectively, to confirm the ferroelectric properties of the composites.

Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications

1999 ◽  
Vol 14 (6) ◽  
pp. 2476-2483 ◽  
Author(s):  
Seung-Hyun Kim ◽  
Dong-Joo Kim ◽  
S. K. Streiffer ◽  
A. I. Kingon
Keyword(s):  
Thin Films ◽  
Thin Layer ◽  
Lead Zirconate Titanate ◽  
Fatigue Testing ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Induced Voltage ◽  
Mixed Composition ◽  
Zirconate Titanate

Mixed composition layered lead zirconate titanate (PZT) films sZr/Ti ratio = 30/70 + 65/35d with stoichiometric lead containing PZT thin layer at the film/electrode interface were successfully fabricated by a modified chemical solution deposition method. These modified PZT thin films are highly (111) textured, and have square-shaped P-E hysteresis loops with large remanent polarization and low coercive field, as well as low saturation voltage. In addition, these films show good fatigue and imprint behavior with Pt electrodes; the retained polarization of the modified film was above 50% after fatigue testing to 109 cycles, and the thermally induced voltage shifts (ΔV) were 0.51 V after heating at 150 °C for 4410 s, two times lower than for films without a stoichiometric thin layer.

Microstructural Changes During Processing of Laser-Deposited BaTiO3 and Pzt Thin Films

1990 ◽  
Vol 202 ◽  
Author(s):  
L. P. Cook ◽  
M. D. Vaudin ◽  
P. K. Schenck ◽  
W. Wong-Ng ◽  
C. K. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Scanning Calorimetry ◽  
Microstructural Changes ◽  
X Ray ◽  
Substrate Heating ◽  
Ferroelectric Hysteresis

ABSTRACTThin films of BaTiO3 and PZT (lead zirconate titanate, 47%PbTiO3, 53%PbZrO3) have been produced by laser irradiation of the appropriate ceramic targets and deposition of the ejected and vaporized material on planar substrates. The microstructural changes during thermal processing of these films have been studied by scanning electron microscopy/energy dispersive x-ray spectrometry (SEM/EDX), transmission electron microscopy (TEM), differential scanning calorimetry (DSC), x-ray diffraction (XRD), and by measurement of electrical properties. Films have been deposited using both Nd/YAG and excimer lasers and on unheated as well as heated substrates. Excimer films are considerably smoother than the Nd/YAG films, and the uniformity of the as-deposited microstructures is promoted by substrate heating. However, ferroelectric hysteresis loops were only observed for the considerably less smooth Nd/YAG PZT films; thermal treatment did little to improve the smoothness of these films. An excimer BaTiO3 film deposited on a heated substrate showed crystallographic alignment and had a dielectric constant of −100. Efforts are underway to combine the best features of films produced by both methods.

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