Two-Dimensional Layered Materials-Based Spintronics

The recent emergence of two-dimensional (2D) layered materials — graphene and transition metal dichalcogenides — opens a new avenue for exploring the internal quantum degrees of freedom of electrons and their potential for new electronics. Here, we provide a brief review of experimental achievements concerning electrical spin injection, spin transport, graphene nanoribbons spintronics and transition metal dichalcogenides spin and pseudospins. Future research in 2D layered materials spintronics will need to address the development of applications such as spin transistors and spin logic devices, as well as exotic physical properties including pseudospins-valley phenomena in graphene and other 2D materials.

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Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides

Philosophical Transactions of The Royal Society A Mathematical Physical and Engineering Sciences ◽

10.1098/rsta.2015.0318 ◽

2016 ◽

Vol 374 (2076) ◽

pp. 20150318 ◽

Cited By ~ 42

Author(s):

Manoj K. Jana ◽

C. N. R. Rao

Keyword(s):

Transition Metal ◽

Transition Metal Dichalcogenides ◽

Single Layer ◽

Layered Materials ◽

Two Dimensional ◽

2D Layered Materials ◽

Wide Range ◽

Buckminster Fullerene ◽

Metal Dichalcogenides ◽

Layered Transition Metal

The discovery of graphene marks a major event in the physics and chemistry of materials. The amazing properties of this two-dimensional (2D) material have prompted research on other 2D layered materials, of which layered transition metal dichalcogenides (TMDCs) are important members. Single-layer and few-layer TMDCs have been synthesized and characterized. They possess a wide range of properties many of which have not been known hitherto. A typical example of such materials is MoS 2 . In this article, we briefly present various aspects of layered analogues of graphene as exemplified by TMDCs. The discussion includes not only synthesis and characterization, but also various properties and phenomena exhibited by the TMDCs. This article is part of the themed issue ‘Fullerenes: past, present and future, celebrating the 30th anniversary of Buckminster Fullerene’.

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Mechanochemical preparation of piezoelectric nanomaterials: BN, MoS2 and WS2 2D materials and their glycine-cocrystals

Nanoscale Horizons ◽

10.1039/c9nh00494g ◽

2020 ◽

Vol 5 (2) ◽

pp. 331-335 ◽

Cited By ~ 2

Author(s):

Viviana Jehová González ◽

Antonio M. Rodríguez ◽

Ismael Payo ◽

Ester Vázquez

Keyword(s):

Transition Metal ◽

Boron Nitride ◽

2D Materials ◽

Transition Metal Dichalcogenides ◽

Layered Materials ◽

Molybdenum Disulphide ◽

2D Layered Materials ◽

Metal Dichalcogenides

Different 2D-layered materials of transition metal dichalcogenides (TMDCs) such as boron nitride (BN) or molybdenum disulphide (MoS2) have been theorised to have piezoelectric behaviour.

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An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides

Chemical Society Reviews ◽

10.1039/c4cs00265b ◽

2015 ◽

Vol 44 (9) ◽

pp. 2629-2642 ◽

Cited By ~ 110

Author(s):

Hualing Zeng ◽

Xiaodong Cui

Keyword(s):

Transition Metal ◽

Spectroscopic Study ◽

Electronic Devices ◽

Transition Metal Dichalcogenides ◽

Layered Materials ◽

Two Dimensional ◽

Group Vi ◽

Intensive Research ◽

Dimensional Group ◽

Metal Dichalcogenides

The ultimate goal of making atomically thin electronic devices stimulates intensive research on layered materials, in particular the group-VI transition metal dichalcogenides (TMDs).

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Robust synthesis of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply

10.21203/rs.3.rs-411823/v1 ◽

2021 ◽

Author(s):

Kaihui Liu ◽

Yonggang Zuo ◽

Can Liu ◽

Liping Ding ◽

Ruixi Qiao ◽

...

Keyword(s):

Transition Metal ◽

Degrees Of Freedom ◽

Transition Metal Dichalcogenides ◽

Alloy Formation ◽

Metal Chalcogenides ◽

Two Dimensional ◽

Mechanism Study ◽

Metal Dichalcogenides ◽

Controllable Growth ◽

Feeding Control

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs), with their atomic thicknesses, high carrier mobility, fast charge transfer, and intrinsic spin-valley couplings, have been demonstrated one of the most appealing candidates for next-generation electronic and optoelectronic devices. The synthesis of TMDs with well-controlled crystallinity, quality and composition is essential to fully realize their promising applications. Similar to that in III-V semiconductor synthesis, the precise precursor supply is a precondition for controllable growth of TMDs. Although great efforts have been devoted to modulate the transition metal supply, few effective methods of chalcogen feeding control were developed. Herein we report a strategy of using active chalcogen monomer supply to grow TMDs and their alloys in a robust and controllable manner. It is found that at a high temperature, the active chalcogen monomers (such as S, Se, Te atoms or their mixtures) can be controllably released from metal chalcogenides and, thus, enable the synthesis of TMDs (MX2, M = Mo, W; X = S, Se, Te) with very high quality, e.g., MoS2 monolayers exhibit photoluminescent circular helicity of ~92%, comparable to the best exfoliated single-crystal flakes and close to the theoretical limit of unity. More intriguingly, a uniform quaternary TMD alloy with three different anions, i.e., MoS2(1-x-y)Se2xTe2y, was accomplished for the first time. Our mechanism study revealed that the active chalcogen monomers can bind and diffuse freely on a TMD surface, which enables the effective nucleation and reaction, quick chalcogen vacancy healing, and alloy formation during the growth. The chalcogen monomer supply strategy offers more degrees of freedom for the controllable synthesis of 2D compounds and their alloys, which will greatly benefit the development of high-end devices with desired 2D materials.

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The electronic structure calculations of two-dimensional transition-metal dichalcogenides in the presence of external electric and magnetic fields

Chemical Society Reviews ◽

10.1039/c4cs00276h ◽

2015 ◽

Vol 44 (9) ◽

pp. 2603-2614 ◽

Cited By ~ 109

Author(s):

Agnieszka Kuc ◽

Thomas Heine

Keyword(s):

Electronic Structure ◽

Transition Metal ◽

Transition Metal Dichalcogenides ◽

Electronic Structure Calculations ◽

Layered Materials ◽

Two Dimensional ◽

Two Dimensional Materials ◽

Electric And Magnetic Fields ◽

Metal Dichalcogenides ◽

Structure Calculations

Transition-metal dichalcogenides TX2 (T = W, Mo; X = S, Se, Te) are layered materials that are available in ultrathin forms such as mono-, bi- and multilayers, which are commonly known as two-dimensional materials.

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Optoelectronic Nanodevices

Nanomaterials ◽

10.3390/nano10030520 ◽

2020 ◽

Vol 10 (3) ◽

pp. 520 ◽

Cited By ~ 1

Author(s):

Minas M. Stylianakis

Keyword(s):

Metal Oxides ◽

Scientific Community ◽

Transition Metal Dichalcogenides ◽

Layered Materials ◽

Metal Nanostructures ◽

Two Dimensional ◽

2D Layered Materials ◽

Graphene Derivatives ◽

Metal Dichalcogenides ◽

Optoelectronic Nanodevices

Over the last decade, novel materials such as graphene derivatives, transition metal dichalcogenides (TMDs), other two-dimensional (2D) layered materials, perovskites, as well as metal oxides and other metal nanostructures have centralized the interest of the scientific community [...]

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Valley excitons in two-dimensional semiconductors

National Science Review ◽

10.1093/nsr/nwu078 ◽

2015 ◽

Vol 2 (1) ◽

pp. 57-70 ◽

Cited By ~ 143

Author(s):

Hongyi Yu ◽

Xiaodong Cui ◽

Xiaodong Xu ◽

Wang Yao

Keyword(s):

Transition Metal ◽

Bound States ◽

Degrees Of Freedom ◽

Transition Metal Dichalcogenides ◽

Visible Range ◽

Two Dimensional ◽

New Class ◽

Strong Coulomb ◽

Metal Dichalcogenides ◽

Direct Band

Abstract Monolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition-metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.

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Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices

Advances in Condensed Matter Physics ◽

10.1155/2017/9042823 ◽

2017 ◽

Vol 2017 ◽

pp. 1-6 ◽

Cited By ~ 7

Author(s):

Leilei Xu ◽

Jiafeng Feng ◽

Kangkang Zhao ◽

Weiming Lv ◽

Xiufeng Han ◽

...

Keyword(s):

Thin Film ◽

Room Temperature ◽

Transition Metal Dichalcogenides ◽

Spin Valve ◽

Layered Materials ◽

Two Dimensional ◽

Magnetoresistance Effect ◽

2D Layered Materials ◽

Metal Dichalcogenides ◽

Valve Effect

Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes. The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K. In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.

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