Thin Film Growth of YBa2Cu3O7-xby ECR Oxygen Plasma Assisted Reactive Evaporation

1989 ◽  
Vol 28 (Part 2, No. 4) ◽  
pp. L635-L638 ◽  
Author(s):  
Toshiyuki Aida ◽  
Akira Tsukamoto ◽  
Kazushige Imagawa ◽  
Tokuumi Fukazawa ◽  
Sakae Saito ◽  
...  
2013 ◽  
Vol 113 (21) ◽  
pp. 214102 ◽  
Author(s):  
Bo Xiao ◽  
Qiguang Yang ◽  
Brandon Walker ◽  
Casey A. Gonder ◽  
Gari C. Romain ◽  
...  

1990 ◽  
Vol 8 (6) ◽  
pp. 3938-3940 ◽  
Author(s):  
P. Luzeau ◽  
X. Z. Xu ◽  
M. Laguës ◽  
N. Hess ◽  
J. P. Contour ◽  
...  

2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  

2021 ◽  
Author(s):  
Kristina Ashurbekova ◽  
Karina Ashurbekova ◽  
Iva Saric ◽  
Evgeny Modin ◽  
Mladen Petravic ◽  
...  

We developed a thin film growth with a radical-initiated cross-linking of vinyl groups in a layer-by-layer manner via molecular layer deposition (MLD). The cross-linked film exhibited improved properties like 12% higher density and enhanced stability compared to the non-cross-linked film.


Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...


2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita

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