Behaviors of gate induced drain leakage stress in lightly doped drain n-channel metal-oxide-semiconductor field-effect transistors

Oxide Semiconductor ◽

Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling

10.1143/jjap.43.918 ◽

2004 ◽

Vol 43 (3) ◽

pp. 918-924 ◽

Cited By ~ 1

Author(s):

Kenshi Tada ◽

Toshimasa Matsuoka ◽

Kenji Taniguchi ◽

Kazuhiro Maeda ◽

Tamotsu Sakai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Device Modeling ◽

Characteristic Extraction ◽

Novel Method ◽

Lightly Doped Drain ◽

Intrinsic Characteristic

A Physics-Based Short-Channel Current-Voltage Model for Lightly-Doped-Drain Metal-Oxide-Semiconductor Field-Effect-Transistors

10.1143/jjap.36.3448 ◽

1997 ◽

Vol 36 (Part 1, No. 6A) ◽

pp. 3448-3459 ◽

Cited By ~ 5

Author(s):

Man-Chun Hu ◽

Sheng-Lyang Jang ◽

Chwan-Gwo Chyau

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Short Channel ◽

Channel Current ◽

Current Voltage ◽

Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal–Oxide–Semiconductor Field-Effect Transistors on SiC Substrate

10.1143/jjap.49.014104 ◽

2010 ◽

Vol 49 (1) ◽

pp. 014104

Author(s):

Tsu Chang ◽

Hsuan-ling Kao ◽

S. L. Liu ◽

Joseph D. S. Deng ◽

K. Y. Horng ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Performance Enhancement ◽

Oxide Semiconductor ◽

Power Performance ◽

Lightly Doped Drain ◽

Frequency Power

Physical Analysis for Saturation Behavior of Hot-Carrier Degradation in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field Effect Transistors

10.1143/jjap.33.606 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 606-611 ◽

Cited By ~ 18

Author(s):

Jung-Suk Goo ◽

Hyungsoon Shin ◽

Hyunsang Hwang ◽

Dae-Gwan Kang ◽

Dong-Hyuk Ju

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Physical Analysis ◽

Hot Carrier ◽

Lightly Doped Drain ◽

Hot Carrier Degradation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal–oxide–semiconductor field effect transistors

10.1116/1.589873 ◽

1998 ◽

Vol 16 (2) ◽

pp. 628 ◽

Cited By ~ 9

Author(s):

W. S. Kwan

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Scattering Parameters ◽

Hot Carrier ◽

Hot Carrier Effects ◽

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Cost Effective ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Electrical Characteristics

Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Inversion Channel

Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Heterostructure Field Effect Transistors

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽