Photoluminescence and Electroluminescence from Polymer-Like Organic Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Para-Xylene as Precursor

1999 ◽  
Vol 38 (Part 2, No. 1A/B) ◽  
pp. L84-L86 ◽  
Author(s):  
Donggeun Jung ◽  
Heesuk Pang ◽  
Jung-Ho Park ◽  
Yung Woo Park ◽  
Yongkeun Son
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Thin Films ◽  
Para Xylene

Fabrication of Diazocine-Based Photochromic Organic Thin Films via Initiated Chemical Vapor Deposition

2020 ◽  
Vol 53 (4) ◽  
pp. 1164-1170
Author(s):  
Maximilian H. Burk ◽  
Stefan Schröder ◽  
Widukind Moormann ◽  
Daniel Langbehn ◽  
Thomas Strunskus ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Thin Films ◽  
Initiated Chemical Vapor Deposition

Optical Properties of Polymer-like Organic Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Toluene as the Precursor

1999 ◽  
Vol 38 (Part 1, No. 4A) ◽  
pp. 2150-2151
Author(s):  
Jongryang Joo ◽  
Yong Chun Quan ◽  
Donggeun Jung ◽  
Sang Jun Kim ◽  
Sang Youl Kim
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Thin Films

Effects of plasma power on the properties of low-k polymerlike organic thin films deposited by plasma-enhanced chemical vapor deposition using the toluene precursor

2000 ◽  
Vol 15 (1) ◽  
pp. 228-230 ◽  
Author(s):  
Jongryang Joo ◽  
Yong Chun Quan ◽  
Donggeun Jung
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Applied Field ◽  
Chemical Vapor ◽  
Relative Dielectric Constant ◽  
Organic Thin Films ◽  
Plasma Power ◽  
Low K

Effects of plasma power on the properties of polymerlike organic thin films deposited by plasma-enhanced chemical vapor deposition using the toluene precursor were studied. As the plasma power was increased from 5 to 60 W, the relative dielectric constant increased from 2.53 to 2.85. The film deposited at higher plasma power showed higher thermal stability. The film deposited at 60 W was stable up to 400 °C. All the films were insulating under applied field ≤1 MV/cm.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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