Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes

2002 ◽  
Vol 41 (Part 1, No. 11B) ◽  
pp. 6749-6753 ◽  
Author(s):  
Sang-Woo Lee ◽  
Suk-Ho Joo ◽  
Sung Lae Cho ◽  
Yoon-Ho Son ◽  
Kyu-Mann Lee ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Dry Etching ◽  
Memory Devices ◽  
Access Memory ◽  
Ferroelectric Capacitor ◽  
Ferroelectric Random Access Memory

An Optimized Process and Characterization of Pb(Zr,Ti)O3 Ferroelectric Capacitor for 1T/1C Ferroelectric RAM

1997 ◽  
Vol 493 ◽  
Author(s):  
Dong-Won Shin ◽  
Soo-Ho Shin ◽  
Jin-Woo Lee ◽  
Hong-Bae Park ◽  
Yoon-Soo Chun ◽  
...  
Keyword(s):  
Sol Gel ◽  
Pyrochlore Phase ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Pzt Thin Films ◽  
Ferroelectric Capacitor ◽  
Ferroelectric Random Access Memory ◽  
Pzt Thin Film ◽  
Coating Methods

ABSTRACTAn optimized process of Pb(Zr,Ti)O3(PZT) ferroelectric capacitor has been investigated in order to develop a highly scaleable 1T/1C ferroelectric random access memory. The PZT ferroelectric capacitor, Pt/PZT/Pt stack, was formed on the TiO2/SiO2/Si substrate. The PZT thin films were prepared by conventional sol-gel multi-coating method. Physical and electrical properties of the PZT ferroelectric capacitors were characterized by XRD, SEM, TEM and RT6000S, respectively.It was revealed that the microstructure of PZT thin film is strongly influenced by sol-gel coating process, especially depending on coating methods of the first PZT layer. The second phase was observed in the PZT thin films, which is found to be pyrochlore phase. The size and density of pyrochlore phase were significantly reduced by modifying the coating methods of first PZT layer. Microstructure of PZT thin film capacitors was evaluated in detail along with electrical properties such as remnant polarization, coercive electric field, and dielectric leakage. The sensing Pr window was also introduced for proper sensing margin in IT/1C ferroelectric random access memory. This concept is well verified by 64Kb 1T/1C ferroelectric random access memory.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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