Integration of Ferroelectric Random Access Memory Devices with Ir/IrO2/Pb(ZrxTi1-x)\barO3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(ZrxTi1-x)O3

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Preparation of (Pb0.88La0.12)TiO3 thin films for dynamic random access memory by low pressure-metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02652977 ◽

1995 ◽

Vol 24 (8) ◽

pp. 1023-1027 ◽

Cited By ~ 7

Author(s):

Seaung-Suk Lee ◽

Ho-Gi Kim

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Electrical Properties for Capacitors of Dynamic Random Access Memory on(Pb,La)(Zr,Ti)O3Thin Films by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.5139 ◽

1994 ◽

Vol 33 (Part 1, No. 9B) ◽

pp. 5139-5142 ◽

Cited By ~ 17

Author(s):

Hiroshi Nakasima ◽

Sigeki Hazumi ◽

Tadashi Kamiya ◽

Kouji Tominaga ◽

Masaru Okada

Keyword(s):

Electrical Properties ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Access Memory ◽

Liquid Delivery Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3Thin Films for High-Density Ferroelectric Random Access Memory Application

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.6690 ◽

2002 ◽

Vol 41 (Part 1, No. 11B) ◽

pp. 6690-6694 ◽

Cited By ~ 30

Author(s):

June Key Lee ◽

Moon-Sook Lee ◽

Sungho Hong ◽

Wanin Lee ◽

Yong Kyun Lee ◽

...

Keyword(s):

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Organic Chemical ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/48/26/265203 ◽

2015 ◽

Vol 48 (26) ◽

pp. 265203 ◽

Cited By ~ 9

Author(s):

M Aoukar ◽

P D Szkutnik ◽

D Jourde ◽

B Pelissier ◽

P Michallon ◽

...

Keyword(s):

Phase Change ◽

Carbon Content ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Access Memory ◽

Memory Applications

Hot wire chemical vapor deposition of germanium selenide thin films for nonvolatile random access memory applications

Applied Physics Letters ◽

10.1063/1.3579192 ◽

2011 ◽

Vol 98 (15) ◽

pp. 151901 ◽

Cited By ~ 4

Author(s):

D. Reso ◽

M. Silinskas ◽

M. Lisker ◽

A. Schubert ◽

E. P. Burte

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Hot Wire ◽

Access Memory ◽

Germanium Selenide ◽

Memory Applications

Mechanism of hemispherical-grained Si formation for dynamic random access memory cells by rapid thermal chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/s11664-001-0170-4 ◽

2001 ◽

Vol 30 (12) ◽

pp. 1532-1536 ◽

Cited By ~ 1

Author(s):

S. Berger ◽

A. Captain ◽

H. Spiellberg ◽

E. Iskevitch ◽

S. Levi

Keyword(s):

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Dynamic Random Access Memory ◽

Memory Cells ◽

Access Memory ◽

Thermal Chemical Vapor Deposition

Preparation of ferroelectric YMnO3 thin films for nonvolatile memory devices by metalorganic chemical vapor deposition

Integrated Ferroelectrics ◽

10.1080/10584589808202073 ◽

1998 ◽

Vol 21 (1-4) ◽

pp. 319-329 ◽

Cited By ~ 5

Author(s):

Woong-Chul Shin ◽

Kyu-Jeong Choi ◽

Cheol-Hoon Yang ◽

Jong-Bong Park ◽

Soon-Gil Yoon

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Nonvolatile Memory ◽

Chemical Vapor ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Chemical vapor deposition synthesis of sp2-BN film on 2-inch Si substrates for bipolar resistive random access memory device

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2019.104614 ◽

2019 ◽

Vol 103 ◽

pp. 104614

Author(s):

Hongwei Liang ◽

Qasim Abbas ◽

Yuanpeng Chen ◽

Jianjun Shi ◽

Xiaochuan Xia ◽

...

Keyword(s):

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Memory Device ◽

Resistive Random Access Memory ◽

Access Memory ◽

Si Substrates

Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process

Advanced Electronic Materials ◽

10.1002/aelm.202100375 ◽

2021 ◽

pp. 2100375

Author(s):

Jaejoong Jeong ◽

Min Ju Kim ◽

Wan Sik Hwang ◽

Byung Jin Cho

Keyword(s):

Initiated Chemical Vapor Deposition

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Deposition Process ◽

Resistive Random Access Memory ◽

Chemical Vapor Deposition Process ◽

Access Memory ◽

Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process (Adv. Electron. Mater. 10/2021)

Advanced Electronic Materials ◽

10.1002/aelm.202170048 ◽

2021 ◽

Vol 7 (10) ◽

pp. 2170048

Author(s):

Jaejoong Jeong ◽

Min Ju Kim ◽

Wan Sik Hwang ◽

Byung Jin Cho

Keyword(s):

Initiated Chemical Vapor Deposition

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

Deposition Process ◽

Resistive Random Access Memory ◽

Chemical Vapor Deposition Process ◽

Access Memory ◽