Investigation of A 450 V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal–Oxide– Semiconductor Fabrication by 12/25/5/40 V Bipolar-Complementary Metal–Oxide–Semiconductor Double-Diffused Metal–Oxide–Semiconductor Process on Bulk Silicon Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.4119 ◽

2004 ◽

Vol 43 (7A) ◽

pp. 4119-4123

Author(s):

Fang-Long Chang ◽

Ming-Jang Lin ◽

C. W. Liaw ◽

Ta-Chuan Liao ◽

Huang-Chung Cheng

Keyword(s):

Metal Oxide ◽

Silicon Substrate ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Bulk Silicon ◽

Semiconductor Fabrication ◽

Semiconductor Process

Download Full-text

Polarization-Independent Photodetectors With Enhanced Responsivity in a Standard Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Process

Journal of Lightwave Technology ◽

10.1109/jlt.2009.2030343 ◽

2009 ◽

Vol 27 (21) ◽

pp. 4892-4896 ◽

Author(s):

N. Moll ◽

T. Morf ◽

M. Fertig ◽

T. Stoferle ◽

B. Trauter ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Polarization Independent ◽

Semiconductor Process

Download Full-text

A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor process

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22626 ◽

2021 ◽

Author(s):

Cheng Cao ◽

Jiangfan Liu ◽

Yubing Li ◽

Tao Tan ◽

Zemeng Huang ◽

...

Keyword(s):

Metal Oxide ◽

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Bandwidth Expansion ◽

Semiconductor Process

Download Full-text

Wide Spectral Characteristics of Si Photonic Crystal Mach-Zehnder Modulator Fabricated by Complementary Metal-Oxide-Semiconductor Process

Photonics ◽

10.3390/photonics3020017 ◽

2016 ◽

Vol 3 (2) ◽

pp. 17 ◽

Author(s):

Yosuke Hinakura ◽

Yosuke Terada ◽

Takuya Tamura ◽

Toshihiko Baba

Keyword(s):

Photonic Crystal ◽

Metal Oxide ◽

Spectral Characteristics ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mach Zehnder Modulator ◽

Semiconductor Process

Download Full-text

Heterogeneous integration and precise alignment of InP-based photonic crystal lasers to complementary metal-oxide semiconductor fabricated silicon-on-insulator wire waveguides

Journal of Applied Physics ◽

10.1063/1.3319667 ◽

2010 ◽

Vol 107 (6) ◽

pp. 063103 ◽

Author(s):

T. J. Karle ◽

Y. Halioua ◽

F. Raineri ◽

P. Monnier ◽

R. Braive ◽

...

Keyword(s):

Photonic Crystal ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Heterogeneous Integration

Download Full-text

Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal–oxide–semiconductor fabrication

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1475984 ◽

2002 ◽

Vol 20 (3) ◽

pp. 918 ◽

Author(s):

Sam-Dong Kim ◽

In-Seok Hwang ◽

Hyung-Moo Park ◽

Jin-Koo Rhee ◽

Chul-Woo Nam

Keyword(s):

Metal Oxide ◽

Chemical Mechanical Polishing ◽

High Selectivity ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Mechanical Polishing ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Semiconductor Fabrication

Download Full-text

Floating zone silicon wafer bonded to Czochralski silicon substrate by surface-activated bonding at room temperature for infrared complementary metal-oxide-semiconductor image sensors

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abcdb4 ◽

2020 ◽

Vol 60 (1) ◽

pp. 015502

Author(s):

Yoshihiro Koga ◽

Kazunari Kurita

Keyword(s):

Metal Oxide ◽

Silicon Wafer ◽

Silicon Substrate ◽

Room Temperature ◽

Complementary Metal Oxide Semiconductor ◽

Image Sensors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Floating Zone ◽

Czochralski Silicon

Download Full-text

Protecting against electrostatic discharge (ESD) in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) manufactured using silicon-on-insulator (SOI) technology

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.243 ◽

2014 ◽

pp. 243-271

Author(s):

M.G. Khazhinsky

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Electrostatic Discharge ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Cmos Integrated Circuits ◽

Download Full-text

Silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) circuits for ultralow power (ULP) applications

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.2.318 ◽

2014 ◽

pp. 318-357

Author(s):

N. Sugii

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Cmos Circuits ◽

Download Full-text

A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction

ACS Applied Materials & Interfaces ◽

10.1021/acsami.6b16173 ◽

2017 ◽

Vol 9 (15) ◽

pp. 13262-13268 ◽

Author(s):

Fabian Ambriz-Vargas ◽

Gitanjali Kolhatkar ◽

Maxime Broyer ◽

Azza Hadj-Youssef ◽

Rafik Nouar ◽

...

Keyword(s):

Metal Oxide ◽

Tunnel Junction ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ferroelectric Tunnel Junction ◽

Semiconductor Process

Download Full-text

Magnetotransistors sensitive to a magnetic field applied in two different directions

Canadian Journal of Physics ◽

10.1139/p91-026 ◽

1991 ◽

Vol 69 (3-4) ◽

pp. 170-173

Author(s):

M. Doan ◽

Lj. Ristic

Keyword(s):

Magnetic Field ◽

Metal Oxide ◽

Basic Principle ◽

Magnetic Induction ◽

Linear Response ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Base Region ◽

Semiconductor Process

A lateral magnetotransistor that is sensitive to a magnetic field applied either parallel or perpendicular to the chip's surface is reported. It is fabricated using the standard complementary metal oxide semiconductor process. The deflection of the carriers in the base region is considered as the basic principle of operation. The device shows a linear response to a magnetic field in both directions. The minimum magnetic induction to be detected is in the order of 10 μT at f = 1 kHz.

Download Full-text