High Speed, Low Power Programming in 0.17µm Channel Length NOR-type Floating Gate Flash Memory Cell Free of Drain Turn-On Effects

2004 ◽  
Vol 43 (No. 2A) ◽  
pp. L224-L226
Author(s):  
Chang-Ki Baek ◽  
Yunheub Song ◽  
Bomsoo Kim ◽  
Wu-yun Quan ◽  
Young June Park ◽  
...  
Keyword(s):  
Low Power ◽  
Flash Memory ◽  
High Speed ◽  
Memory Cell ◽  
Channel Length ◽  
Floating Gate ◽  
Turn On ◽  
Flash Memory Cell

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Effect of Asymmetric Channel on Charging Behavior of 22-nm Quantum-Dot Floating-Gate Flash Memory Cell

2012 ◽  
Vol 59 (9) ◽  
pp. 2550-2554 ◽  
Author(s):  
Ashwini Shrirao ◽  
Rashmi Gautam ◽  
Rajendra M. Patrikar
Keyword(s):  
Quantum Dot ◽  
Flash Memory ◽  
Memory Cell ◽  
Floating Gate ◽  
Asymmetric Channel ◽  
Flash Memory Cell

A new floating gate compact model applied to flash memory cell

2003 ◽  
Vol 322 (1-3) ◽  
pp. 250-255 ◽  
Author(s):  
R. Laffont ◽  
P. Masson ◽  
S. Bernardini ◽  
R. Bouchakour ◽  
J.M. Mirabel
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Floating Gate ◽  
Compact Model ◽  
Flash Memory Cell
Sign in / Sign up

Export Citation Format

Share Document