Effect of Rapid Thermal Annealing on Al Dopedn-ZnO Films Grown by RF-Magnetron Sputtering

Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering under different powers. The XRD results showed that ZnO crystallite size along c-axis decreased by 43% with deposition power increased from 60 W to 300 W, increased 36% with annealing temperature rising to400∘C. TDS measurement revealed that the desorption peaks of both atomic Zn (60 W-deposited) and oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were originated from300∘C. When annealing temperature was higher than300∘C, the sheet resistance dramatically decreased, and compressive stress in the (002) plane changed to tensile stress as well. The comparison measurements of ZnO films crystallinity strongly suggested that both lower deposition power and certain thermal annealing temperature over300∘Cwould contribute to the formation of high quality ZnO films.

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Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealing

Applied Physics Letters ◽

10.1063/1.2896642 ◽

2008 ◽

Vol 92 (14) ◽

pp. 141911 ◽

Cited By ~ 35

Author(s):

N. A. Suvorova ◽

I. O. Usov ◽

L. Stan ◽

R. F. DePaula ◽

A. M. Dattelbaum ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Magnetron Sputtering ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Structural And Optical Properties

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Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Nanomaterials ◽

10.3390/nano12010019 ◽

2021 ◽

Vol 12 (1) ◽

pp. 19

Author(s):

Simeon Simeonov ◽

Anna Szekeres ◽

Dencho Spassov ◽

Mihai Anastasescu ◽

Ioana Stanculescu ◽

...

Keyword(s):

Thin Films ◽

Electron Transport ◽

Magnetron Sputtering ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Transport Mechanism ◽

Rf Magnetron Sputtering ◽

Deep Levels ◽

Nitrogen Doped ◽

Doped Zno

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.

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Effect of Rapid Thermal Annealing Temperature on Oxygen-Deficient TiO2-x-based Thin-Film Transistors Deposited by RF Magnetron Sputtering

Korean Journal of Metals and Materials ◽

10.3365/kjmm.2019.57.7.438 ◽

2019 ◽

Vol 57 (7) ◽

pp. 438-446

Author(s):

Han-Sang Kim ◽

Jae-Yun Lee ◽

Sung-Jin Kim

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Thin Film Transistors ◽

Annealing Temperature ◽

Rf Magnetron Sputtering ◽

Rapid Thermal Annealing Temperature

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Influence of Thermal Annealing on Microstructures of Zinc Oxide Films Deposited by RF Magnetron Sputtering

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3319 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3319-3323 ◽

Cited By ~ 39

Author(s):

Takahiro Hiramatsu ◽

Mamoru Furuta ◽

Hiroshi Furuta ◽

Tokiyoshi Matsuda ◽

Takashi Hirao

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Thermal Annealing ◽

Oxide Films ◽

Rf Magnetron Sputtering ◽

Zinc Oxide Films

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Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

MRS Proceedings ◽

10.1557/proc-1035-l05-16 ◽

2007 ◽

Vol 1035 ◽

Cited By ~ 1

Author(s):

Seol Hee Choi ◽

Chan Hyoung Kang

Keyword(s):

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Silicon Wafers ◽

Center Frequency ◽

High Resistivity ◽

Chemical Vapor Deposition Method ◽

Zno Films ◽

Optimum Process ◽

Optimum Conditions ◽

Saw Devices

AbstractHighly c-axis oriented, dense, and fine-grained polycrystalline ZnO films with smooth surface and high resistivity were deposited on 4 inch silicon wafers by employing ZnO targets in a radio-frequency (RF) magnetron sputtering system. By changing applied RF power, substrate temperature and O2/Ar gas ratio, the optimum process parameters were found to be 150 W, 200 °C and 30/70, respectively. Applying the ZnO films deposited under these optimum conditions, surface acoustic wave (SAW) devices of ZnO/IDT/SiO2/Si structure were fabricated by conventional photolithography and etching processes. The interdigital transducers (IDT), made of the aluminum deposited by DC magnetron sputter, were patterned as 2.5/2.5 μm of finger width/spacing. Another type of SAW filter of IDT/ZnO/diamond/Si structure was fabricated. In this structure, high-quality nanocrystalline diamond (NCD) films were deposited on 4 inch silicon wafers by direct current (DC) plasma assisted chemical vapor deposition method using H2-CH4 mixture as precursor gas. On the top of the diamond films, ZnO films were deposited under the optimum conditions. The aluminum IDT pattern was fabricated on the ZnO/diamond layered films. The characteristics of the fabricated SAW devices were evaluated in terms of center frequency, insertion loss, and wave propagation velocity.

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