Influence of rapid thermal annealing on surface texture-etched Al-doped ZnO films prepared by various magnetron sputtering methods

2012 ◽  
Vol 520 (10) ◽  
pp. 3803-3807 ◽  
Author(s):  
Tadatsugu Minami ◽  
Tomoyasu Hirano ◽  
Toshihiro Miyata ◽  
Jun-ichi Nomoto
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Surface Texture ◽  
Zno Films ◽  
Doped Zno

Effect of Thermal Annealing on Ga-Doped ZnO Films Prepared by Magnetron Sputtering

2007 ◽  
Vol 154 (6) ◽  
pp. H521 ◽  
Author(s):  
J. K. Sheu ◽  
K. W. Shu ◽  
M. L. Lee ◽  
C. J. Tun ◽  
G. C. Chi
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Zno Films ◽  
Doped Zno

Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer deposition

2013 ◽  
Vol 577 ◽  
pp. 340-344 ◽  
Author(s):  
Shang-Bin Zhu ◽  
Yang Geng ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno

Effect of Rapid Thermal Annealing on Al Dopedn-ZnO Films Grown by RF-Magnetron Sputtering

2005 ◽  
Vol 44 (7A) ◽  
pp. 4776-4779 ◽  
Author(s):  
Kyoung-Kook Kim ◽  
Hitoshi Tampo ◽  
June-O Song ◽  
Tae-Yeon Seong ◽  
Seong-Ju Park ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Rf Magnetron Sputtering ◽  
Zno Films

Study on Al-Doped ZnO Films Prepared by Magnetron Sputtering with Rapid Thermal Annealing Process

2010 ◽  
Vol 97-101 ◽  
pp. 582-585
Author(s):  
Hua Wang ◽  
Ji Wen Xu ◽  
Ming Fang Ren ◽  
Ling Yang
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Sputtering Power ◽  
Thermal Annealing Process ◽  
Doped Zno

Transparent and conductive Al-doped ZnO (AZO) films were prepared by nonreactive DC magnetron sputtering with rapid thermal annealing process. The effects of sputtering power and annealing temperature on growth behavior, electrical rand optical properties of AZO films were investigated. The experimental results show that the sputtering power and annealing temperature had great influence on the electrical resistivity of AZO films due to the change of (002) orientation and grain size. The lowest electrical resistivity of AZO films was 5.3×10-4Ω•cm when the sputtering power was 100W and the annealing temperature was 200°C or above. The sputtering power and annealing temperature had little effect on optical transmittance, which was between 86% and 90%, but the absorption edge had a blue shift with the increase of sputtering power and annealing temperature.

scholarly journals Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Simeon Simeonov ◽  
Anna Szekeres ◽  
Dencho Spassov ◽  
Mihai Anastasescu ◽  
Ioana Stanculescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Transport Mechanism ◽  
Rf Magnetron Sputtering ◽  
Deep Levels ◽  
Nitrogen Doped ◽  
Doped Zno

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG
Keyword(s):  
Magnetron Sputtering ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Sputtering Pressure
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