Copper Filling of Deep Submicrometer Trenches with Ruthenium-Lined Barrier Metal by High-Vacuum Magnetron Sputtering Using Argon Gas with Added Oxygen

2012 ◽  
Vol 51 ◽  
pp. 025701 ◽  
Author(s):  
Masatoshi Itoh ◽  
Shigeru Saito
Keyword(s):  
Magnetron Sputtering ◽  
High Vacuum ◽  
Argon Gas ◽  
Deep Submicrometer ◽  
Barrier Metal

Copper Filling of Deep Sub-µm Through-Holes by High-Vacuum Planar Magnetron Sputtering Using Argon Gas with Added Nitrogen: Optimum Quantity of Nitrogen in Argon Gas

2006 ◽  
Vol 45 (2A) ◽  
pp. 736-738 ◽  
Author(s):  
Shigeru Saito ◽  
Yoshio Uhara ◽  
Takahide Uenosono ◽  
Jyunichi Nagata ◽  
Minemasa Oyama ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Vacuum ◽  
Argon Gas ◽  
Optimum Quantity ◽  
Planar Magnetron

Copper filling of deep sub-μm through-holes by high-vacuum planar magnetron sputtering using argon gas with added oxygen

2009 ◽  
Vol 256 (4) ◽  
pp. 1240-1243 ◽  
Author(s):  
Yoshio Uhara ◽  
Tsubasa Urano ◽  
Masatoshi Itoh ◽  
Hideo Hayashi ◽  
Yousuke Manba ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Vacuum ◽  
Argon Gas ◽  
Planar Magnetron

TiO2/SiO2 multilayer as an antireflective and protective coating deposited by microwave assisted magnetron sputtering

2013 ◽  
Vol 21 (2) ◽  
Author(s):  
M. Mazur ◽  
D. Wojcieszak ◽  
J. Domaradzki ◽  
D. Kaczmarek ◽  
S. Song ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Vacuum ◽  
Visible Spectrum ◽  
Ultra High Vacuum ◽  
Protective Film ◽  
Wetting Properties ◽  
Microwave Assisted ◽  
Atomic Force ◽  
Packed Structure ◽  
Protective Performance

AbstractIn this paper designing, preparation and characterization of multifunctional coatings based on TiO2/SiO2 has been described. TiO2 was used as a high index material, whereas SiO2 was used as a low index material. Multilayers were deposited on microscope slide substrates by microwave assisted reactive magnetron sputtering process. Multilayer design was optimized for residual reflection of about 3% in visible spectrum (450–800 nm). As a top layer, TiO2 with a fixed thickness of 10 nm as a protective film was deposited. Based on transmittance and reflectance spectra, refractive indexes of TiO2 and SiO2 single layers were calculated. Ultra high vacuum atomic force microscope was used to characterize the surface properties of TiO2/SiO2 multilayer. Surface morphology revealed densely packed structure with grains of about 30 nm in size. Prepared samples were also investigated by nanoindentation to evaluate their protective performance against external hazards. Therefore, the hardness of the thin films was measured and it was equal to 9.34 GPa. Additionally, contact angle of prepared coatings has been measured to assess the wetting properties of the multilayer surface.

Effects of N 2 /O 2 flow rate on the surface properties and biocompatibility of nano-structured TiO x N y thin films prepared by high vacuum magnetron sputtering

2015 ◽  
Vol 24 (7) ◽  
pp. 075202 ◽  
Author(s):  
Sehrish Saleem ◽  
R. Ahmad ◽  
Uzma Ikhlaq ◽  
R. Ayub ◽  
Jin Wei Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface Properties ◽  
Flow Rate ◽  
High Vacuum

scholarly journals The Effects of Annealing Temperature on the Structural Properties of ZrB2 Films Deposited via Pulsed DC Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 253 ◽  
Author(s):  
Wei-Chun Chen ◽  
Chao-Te Lee ◽  
James Su ◽  
Hung-Pin Chen
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Film Structure ◽  
Dc Magnetron Sputtering ◽  
Cross Sectional ◽  
X Ray

Zirconium diboride (ZrB2) thin films were deposited on a Si(100) substrate using pulsed direct current (dc) magnetron sputtering and then annealed in high vacuum. In addition, we discussed the effects of the vacuum annealing temperature in the range of 750 to 870 °C with flowing N2 on the physical properties of ZrB2 films. The structural properties of ZrB2 films were investigated with X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The XRD patterns indicated that the ZrB2 films annealed at various temperatures exhibited a highly preferred orientation along the [0001] direction and that the residual stress could be relaxed by increasing the annealing temperature at 870 °C in a vacuum. The surface morphology was smooth, and the surface roughness slightly decreased with increasing annealing temperature. Cross-sectional TEM images of the ZrB2/Si(100) film annealed at 870 °C reveals the films were highly oriented in the direction of the c-axis of the Si substrate and the film structure was nearly stoichiometric in composition. The XPS results show the film surfaces slightly contain oxygen, which corresponds to the binding energy of Zr–O. Therefore, the obtained ZrB2 film seems to be quite suitable as a buffer layer for III-nitride growth.

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