Single Photon Sources in Atomically Thin Materials

2019 ◽  
Vol 70 (1) ◽  
pp. 123-142 ◽  
Author(s):  
Milos Toth ◽  
Igor Aharonovich
Keyword(s):  
Light Emission ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Transition Metal Dichalcogenides ◽  
Proof Of Concept ◽  
Scientific Discussion ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
On Chip ◽  
Potential Use

Layered materials are very attractive for studies of light–matter interactions at the nanoscale. In particular, isolated quantum systems such as color centers and quantum dots embedded in these materials are gaining interest due to their potential use in a variety of quantum technologies and nanophotonics. Here, we review the field of nonclassical light emission from van der Waals crystals and atomically thin two-dimensional materials. We focus on transition metal dichalcogenides and hexagonal boron nitride and discuss the fabrication and properties of quantum emitters in these systems and proof-of-concept experiments that provide a foundation for their integration in on-chip nanophotonic circuits. These experiments include tuning of the emission wavelength, electrical excitation, and coupling of the emitters to waveguides, dielectric cavities, and plasmonic resonators. Finally, we discuss current challenges in the field and provide an outlook to further stimulate scientific discussion.

scholarly journals Exciton-dielectric mode coupling in MoS2 nanoflakes visualized by cathodoluminescence

Nanophotonics ◽  
2022 ◽  
Vol 0 (0) ◽  
Author(s):  
Dung Thi Vu ◽  
Nikolaos Matthaiakakis ◽  
Hikaru Saito ◽  
Takumi Sannomiya
Keyword(s):  
Light Emission ◽  
Single Photon ◽  
Transition Metal Dichalcogenides ◽  
High Refractive Index ◽  
Scanning Transmission Electron Microscope ◽  
Optical Responses ◽  
Single Photon Emitters ◽  
Scanning Transmission ◽  
Metal Dichalcogenides ◽  
Energy Conversion Devices

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs), possessing unique exciton luminescence properties, have attracted significant attention for use in optical and electrical devices. TMDCs are also high refractive index materials that can strongly confine the electromagnetic field in nanoscale dimensions when patterned into nanostructures, thus resulting in complex light emission that includes exciton and dielectric resonances. Here, we use cathodoluminescence (CL) to experimentally visualize the emission modes of single molybdenum disulfide (MoS2) nanoflakes and to investigate luminescence enhancement due to dielectric resonances in nanoscale dimensions, by using a scanning transmission electron microscope. Specifically, we identify dielectric modes whose resonant wavelength is sensitive to the shape and size of the nanoflake, and exciton emission peaks whose energies are insensitive to the geometry of the flakes. Using a four-dimensional CL method and boundary element method simulations, we further theoretically and experimentally visualize the emission polarization and angular emission patterns, revealing the coupling of the exciton and dielectric resonant modes. Such nanoscopic observation provides a detailed understanding of the optical responses of MoS2 including modal couplings of excitons and dielectric resonances which play a crucial role in the development of energy conversion devices, single-photon emitters, and nanophotonic circuits with enhanced light-matter interactions.

scholarly journals Optical properties of atomically thin transition metal dichalcogenides: observations and puzzles

Nanophotonics ◽  
2017 ◽  
Vol 6 (6) ◽  
pp. 1289-1308 ◽  
Author(s):  
Maciej Koperski ◽  
Maciej R. Molas ◽  
Ashish Arora ◽  
Karol Nogajewski ◽  
Artur O. Slobodeniuk ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Optical Pumping ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Transition Metal Dichalcogenides ◽  
Wide Band ◽  
Open Questions ◽  
Single Photon Emitters ◽  
Metal Dichalcogenides

AbstractRecent results on the optical properties of monolayer and few layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits of our understanding in this emerging field of research. We first introduce the representative band structure of these systems and their interband optical transitions. The effect of an external magnetic field is then considered to discuss Zeeman spectroscopy and optical pumping experiments, both revealing phenomena related to the valley degree of freedom. Finally, we discuss the observation of single photon emitters in different types of layered materials, including wide band gap hexagonal boron nitride. While going through these topics, we try to focus on open questions and on experimental observations, which do not yet have a clear explanation.

scholarly journals Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Frédéric Peyskens ◽  
Chitraleema Chakraborty ◽  
Muhammad Muneeb ◽  
Dries Van Thourhout ◽  
Dirk Englund
Keyword(s):  
Silicon Nitride ◽  
Integrated Circuits ◽  
Large Scale ◽  
Single Photon ◽  
Transition Metal Dichalcogenides ◽  
Building Blocks ◽  
Single Photon Emitters ◽  
Metal Dichalcogenides ◽  
On Chip ◽  
Scale Integration

Abstract Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.

scholarly journals Strain Induced Phase Transition of WS2 by Local Dewetting of Au/Mica Film upon Annealing

Surfaces ◽  
2020 ◽  
Vol 4 (1) ◽  
pp. 1-8
Author(s):  
Tomasz Kosmala ◽  
Pawel Palczynski ◽  
Matteo Amati ◽  
Luca Gregoratti ◽  
Hikmet Sezen ◽  
...  
Keyword(s):  
Phase Transition ◽  
Transition Metal ◽  
Thermal Annealing ◽  
Tensile Strain ◽  
Structural Phase ◽  
Transition Metal Dichalcogenides ◽  
Proof Of Concept ◽  
Threshold Strain ◽  
Metal Dichalcogenides ◽  
Phase Engineering

Here, we present a proof-of-concept experiment where phase engineering at the nanoscale of 2D transition metal dichalcogenides (TMDC) flakes (from semiconducting 2H phase to metallic 1T phase) can be achieved by thermal annealing of a TMDC/Au/mica system. The local dewetting of Au particles and resulting tensile strain produced on the TMDC flakes, strongly bound to the Au surface through effective S-Au bonds, can induce a local structural phase transition. An important role is also played by the defects induced by the thermal annealing: when vacancies are present, the threshold strain needed to trigger the phase transition is significantly reduced. Scanning photoelectron microscopy (SPEM) was revealed to be the perfect tool to monitor the described phenomena.

Strong coupling in two-dimensional materials-based nanostructures: a review

2022 ◽  
Author(s):  
Ye Ming Qing ◽  
Yongze Ren ◽  
Dangyuan Lei ◽  
Hui Feng Ma ◽  
Tie Jun Cui
Keyword(s):  
Strong Coupling ◽  
Coupling Effect ◽  
Transition Metal Dichalcogenides ◽  
Hybrid Nanostructures ◽  
Two Dimensional ◽  
Strong Light ◽  
Two Dimensional Materials ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Emission Behavior

Abstract Strong interaction between electromagnetic radiation and matter leads to the formation of hybrid light-matter states, making the absorption and emission behavior different from those of the uncoupled states. Strong coupling effect results in the famous Rabi splitting and the emergence of new polaritonic eigenmodes, exhibiting spectral anticrossing behavior and unique energy-transfer properties. In recent years, there has been a rapidly increasing number of works focusing on strong coupling between nanostructures and two-dimensional materials (2DMs), because of the exceptional properties and applications they demonstrate. Here, we review the significant recent advances and important developments of strong light-matter interactions in 2DMs-based nanostructures. We adopt the coupled oscillator model to describe the strong coupling and give an overview of various hybrid nanostructures to realize this regime, including graphene-based nanostructures, black phosphorus-based nanostructures, transition-metal dichalcogenides-based nanostructures, etc. In addition, we discuss potential applications that can benefit from these effects and conclude our review with a perspective on the future of this rapidly emerging field.

scholarly journals Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Snežana Lazić ◽  
André Espinha ◽  
Sergio Pinilla Yanguas ◽  
Carlos Gibaja ◽  
Félix Zamora ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Information Technologies ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
Theoretical Calculations ◽  
Optical Emission ◽  
Spectral Tuning ◽  
Spectral Detection ◽  
On Chip

Abstract Luminescent defects in hexagonal boron nitride (h-BN) have recently emerged as a promising platform for non-classical light emission. On-chip solutions, however, require techniques for controllable in-situ manipulation of quantum light. Here, we demonstrate the dynamic spectral and temporal tuning of the optical emission from h-BN via moving acousto-mechanical modulation induced by stimulated phonons. When perturbed by the propagating acoustic phonon, the optically probed radiative h-BN defects are periodically strained and their sharp emission lines are modulated by the deformation potential coupling. This results in an acoustically driven spectral tuning within a 2.5-meV bandwidth. Our findings, supported by first-principles theoretical calculations, reveal exceptionally high elasto-optic coupling in h-BN of ~50 meV/%. Temporal control of the emitted photons is achieved by combining the acoustically mediated fine-spectral tuning with spectral detection filtering. This study opens the door to the use of sound for scalable integration of h-BN emitters in nanophotonic and quantum information technologies.

scholarly journals A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1245 ◽  
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wei Li ◽  
Tao Han
Keyword(s):  
Carrier Mobility ◽  
Transition Metal Dichalcogenides ◽  
Image Force ◽  
Drain Current ◽  
Equivalent Model ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
New Generation

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.

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