Dopant Diffusion Barrier Properties of Ultrathin, Chemically Grown Oxide Films

2006 ◽  
Vol 9 (2) ◽  
pp. G34-G36
Author(s):  
S. B. Herner ◽  
V. L. Eckert
Keyword(s):  
Diffusion Barrier ◽  
Oxide Films ◽  
Barrier Properties ◽  
Dopant Diffusion

Adhesion and Cu Diffusion Barrier Properties of a MnOx Barrier Layer Formed with Thermal MOCVD

2009 ◽  
Vol 1156 ◽  
Author(s):  
Koji Neishi ◽  
Vijay Kumar Dixit ◽  
S. Aki ◽  
Junichi Koike ◽  
K. Matsumoto ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Valence State ◽  
Dielectric Layer ◽  
Barrier Properties ◽  
Barrier Property ◽  
Adhesion Property ◽  
Composition Analysis ◽  
Good Adhesion ◽  
Deposition Chamber

AbstractA thin-amorphous MnOx layer using self-forming barrier process with a Cu-Mn alloy shows good adhesion and diffusion barrier properties between copper and dielectric layer, resulting in excellent reliability for stress and electromigration. Meanwhile, chemical vapor deposition (CVD) can be employed for conformal deposition of the barrier layer in narrow trenches and vias for future technology node. In our previous research, a thin and uniform amorphous MnOx layer could be formed on TEOS-oxide by thermal metal-organic CVD (MOCVD), showing a good diffusion barrier property. In addition, a good adhesion strength is necessary between a Cu line and a dielectric layer not only to ensure good SM and EM resistance but also to prevent film delamination under mechanical or thermal stress conditions during fabrication process such as chemical mechanical polishing or high temperature annealing. To date, no information is available with regard to the adhesion property of CVD-MnOx. In this work, we report diffusion barrier property in further detail and adhesion property in PVD-Cu/CVD-MnOx/SiO2/Si. The temperature dependence of the adhesion property is correlated with the chemical composition and valence state of Mn investigated with SIMS and Raman spectroscopy.Substrates were p-type Si wafers having a plasma-TEOS oxide of 100nm in thickness. CVD was carried out in a deposition chamber. A manganese precursor was vaporized and introduced into the deposition chamber with H2 carrier gas. After the CVD, a Cu overlayer was deposited on some samples using a sputtering system in load lock chamber of the CVD machine. The diffusion barrier property of the MnOx film was investigated in annealed samples at 400 oC for 100 hours in a vacuum of better than 1.0×10-5 Pa. The Adhesion property of Mn oxide was investigated by Scotch tape test in the as-deposited and in the annealed Cu/CVD-MnOx/TEOS samples. The obtained samples were analyzed for thickness and microstructure with TEM, chemical bonding states of the MnOx layer with XPS, and composition of each layer with SIMS.In the CVD deposition below 300 °C, no Cu delamination was observed both in the as-deposited and in the annealed Cu/CVD-MnOx/SiO2 samples. On the other hand, in the CVD deposition at 400 °C, the Cu films were delaminated from the CVD-MnOx/TEOS substrates. The XPS peak position of Mn 2p and Mn 3s spectra indicated that the valence state of Mn in the as-deposited barrier layer below 400 °C was 2+. Composition analysis with SIMS as well as Raman also indicated the presence of a larger amount of carbon at 400 °C than at less than 300 °C. The good adhesion between Cu and MnO could be attributed to an amount of carbon inclusion in the CVD barrier layer.

scholarly journals Diffusion barrier properties of molybdenum back contacts for Cu(In,Ga)Se2solar cells on stainless steel foils

2013 ◽  
Vol 113 (5) ◽  
pp. 054506 ◽  
Author(s):  
P. Blösch ◽  
F. Pianezzi ◽  
A. Chirilă ◽  
P. Rossbach ◽  
S. Nishiwaki ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Diffusion Barrier ◽  
Barrier Properties ◽  
Stainless Steel Foils ◽  
Steel Foils

Diffusion barrier properties of metallorganic chemical vapor deposited NbN O C films for Cu metallization

2003 ◽  
Vol 163-164 ◽  
pp. 214-219 ◽  
Author(s):  
C.W Wu ◽  
W.C Gau ◽  
J.C Hu ◽  
T.C Chang ◽  
C.H Chen ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Cu Metallization ◽  
Chemical Vapor Deposited

Diffusion barrier properties of amorphous TiB2 for application in Cu metallization

2002 ◽  
Vol 91 (9) ◽  
pp. 6099-6104 ◽  
Author(s):  
Joshua Pelleg ◽  
G. Sade
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Cu Metallization

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Design and characterization of a biocompatible packaging concept for implantable electronic devices

2011 ◽  
Vol 2011 (1) ◽  
pp. 000152-000160 ◽  
Author(s):  
Maaike Op de Beeck ◽  
Karen Qian ◽  
Paolo Fiorini ◽  
Karl Malachowski ◽  
Chris Van Hoof
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
The Body ◽  
Second Phase ◽  
Electronic Systems ◽  
Wafer Level ◽  
Packaging Process ◽  
Directional Diffusion ◽  
Chip Sealing

A biocompatible packaging process for implantable electronic systems is described, combining biocompatibility and hermeticity with extreme miniaturization. In a first phase of the total packaging sequence, all chips are encapsulated in order to realize a bi-directional diffusion barrier preventing body fluids to leach into the package causing corrosion, and preventing IC materials such as Cu to diffuse into the body, causing various adverse effects. For cost effectiveness, this hermetic chip sealing is performed as post-processing at wafer level, using modifications of standard clean room (CR) fabrication techniques. Well known conductive and insulating CR materials are investigated with respect to their biocompatibility, diffusion barrier properties and sensitivity to corrosion. In a second phase of the packaging process, all chips of the final device should be electrically connected, applying a biocompatible metallization scheme using eg. gold or platinum. For electrodes being in direct contact with the tissue after implantation, IrOx metallization is proposed. Device assembly is the final packaging step, during which all system components such as electronics, passives, a battery,… will be interconnected. To provide sufficient mechanical support, all these components are embedded using a biocompatible elastomer such as PDMS.

Diffusion Barrier Properties of Atomic Layer Deposited Ultrathin Ta[sub 2]O[sub 5] and TiO[sub 2] Films

2006 ◽  
Vol 153 (4) ◽  
pp. G304 ◽  
Author(s):  
Petra Alén ◽  
Marko Vehkamäki ◽  
Mikko Ritala ◽  
Markku Leskelä
Keyword(s):  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties

Diffusion barrier properties of nano-crystalline TiZrN films in Cu/Si contact systems

2003 ◽  
Vol 216 (1-4) ◽  
pp. 181-186 ◽  
Author(s):  
Mayumi B. Takeyama ◽  
Takaomi Itoi ◽  
Eiji Aoyagi ◽  
Atsushi Noya
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Nano Crystalline

ZrN Diffusion Barrier in Aluminum Metallization Schemes

1982 ◽  
Vol 18 ◽  
Author(s):  
L. Krusin-Elbaum ◽  
M. Wittmer ◽  
C.-Y. Ting ◽  
J. J. Cuomo
Keyword(s):  
Grain Size ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Barrier Properties ◽  
Metal Nitrides ◽  
X Ray ◽  
Annealing Temperatures ◽  
Fine Grain ◽  
Transmission Electron ◽  
Aluminum Metallization

We have studied reactively sputtered ZrN, the most thermally stable of the refractory metal nitrides, for its diffusion barrier properties in aluminum metallization schemes with Rutherford backscattering spectroscopy and transmission electron microscopy (TEM). We find this compound to be very effective against aluminum diffusion up to 500 °C, independently of substrate temperature during sputtering. The useful temperature range can be extended by 50 °C with proper preannealing prior to aluminum deposition. The TEM study of the ZrN grain size as a function of annealing temperature revealed that the grain size does not change significantly upon annealing and that the grains are relatively small even at the highest annealing temperatures (about 300 Å at 900 °C). In addition, for annealing temperatures of and below 500 °C large portions of ZrN films were found to be of either amorphous or extremely fine–grain material, thus inhibiting the diffusion along grain boundaries. The presence of Zr3Al4Si5 ternary compound in samples annealed at 600 °C, as determined by X-ray analysis, may suggest that the ZrN barrier fails by decomposition of the film by aluminum.

Diffusion barrier properties of carboxyl- and amine-terminated molecular nanolayers

2004 ◽  
Vol 85 (4) ◽  
pp. 579-581 ◽  
Author(s):  
P. G. Ganesan ◽  
A. P. Singh ◽  
G. Ramanath
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties
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