ZrN Diffusion Barrier in Aluminum Metallization Schemes

1982 ◽  
Vol 18 ◽  
Author(s):  
L. Krusin-Elbaum ◽  
M. Wittmer ◽  
C.-Y. Ting ◽  
J. J. Cuomo
Keyword(s):  
Grain Size ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Barrier Properties ◽  
Metal Nitrides ◽  
X Ray ◽  
Annealing Temperatures ◽  
Fine Grain ◽  
Transmission Electron ◽  
Aluminum Metallization

We have studied reactively sputtered ZrN, the most thermally stable of the refractory metal nitrides, for its diffusion barrier properties in aluminum metallization schemes with Rutherford backscattering spectroscopy and transmission electron microscopy (TEM). We find this compound to be very effective against aluminum diffusion up to 500 °C, independently of substrate temperature during sputtering. The useful temperature range can be extended by 50 °C with proper preannealing prior to aluminum deposition. The TEM study of the ZrN grain size as a function of annealing temperature revealed that the grain size does not change significantly upon annealing and that the grains are relatively small even at the highest annealing temperatures (about 300 Å at 900 °C). In addition, for annealing temperatures of and below 500 °C large portions of ZrN films were found to be of either amorphous or extremely fine–grain material, thus inhibiting the diffusion along grain boundaries. The presence of Zr3Al4Si5 ternary compound in samples annealed at 600 °C, as determined by X-ray analysis, may suggest that the ZrN barrier fails by decomposition of the film by aluminum.

Aspects of microanalysis in a transmission electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 510-511
Author(s):  
R. Sinclair ◽  
B.E. Jacobson
Keyword(s):  
Grain Size ◽  
Electron Beam ◽  
Electron Microscope ◽  
Chemical Analysis ◽  
Transmission Electron Microscope ◽  
Vapor Deposition ◽  
Critical Currents ◽  
X Ray ◽  
Fine Grain ◽  
Transmission Electron

INTRODUCTIONThe prospect of performing chemical analysis of thin specimens at any desired level of resolution is particularly appealing to the materials scientist. Commercial TEM-based systems are now available which virtually provide this capability. The purpose of this contribution is to illustrate its application to problems which would have been intractable until recently, pointing out some current limitations.X-RAY ANALYSISIn an attempt to fabricate superconducting materials with high critical currents and temperature, thin Nb3Sn films have been prepared by electron beam vapor deposition [1]. Fine-grain size material is desirable which may be achieved by codeposition with small amounts of Al2O3 . Figure 1 shows the STEM microstructure, with large (∽ 200 Å dia) voids present at the grain boundaries. Higher quality TEM micrographs (e.g. fig. 2) reveal the presence of small voids within the grains which are absent in pure Nb3Sn prepared under identical conditions. The X-ray spectrum from large (∽ lμ dia) or small (∽100 Ǻ dia) areas within the grains indicates only small amounts of A1 (fig.3).

THE INVESTIGATION ON STABILITY AND STRUCTURAL PROPERTIES OF COHESION-BASED NANOSTRUCTURES MATERIAL

2013 ◽  
Vol 27 (27) ◽  
pp. 1350153 ◽  
Author(s):  
ALI BAHARI ◽  
REZA GHOLIPUR ◽  
MARYAM DERAKHSHI
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Growth Mode ◽  
X Ray Diffraction ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
X Ray ◽  
Annealing Temperatures ◽  
Atomic Force ◽  
Transmission Electron

Styrene-doped ZrLaO y nanostructures were obtained by sol–gel method low-temperature synthesis. The nanostructures were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and transmission electron microscopy (TEM) techniques. The observation using SEM and TEM revealed that the ring-shaped nanostructures were very uniform. Further characterization using XRD disclosed that the cohesion of the samples was controllable with annealing temperatures in the range of 800–1500°C. Cohesion property was investigated for the samples. The cohesion increased when increasing the annealing temperature. This was linked to the reinforcement of the oxygen bound on the ZrLaO y nanostructures The shape of nanostructures showed a transformation from a ring-shaped growth mode to a hole-surfaced growth mode with increasing annealing temperature. The styrene-doped ZrLaO y nanostructures with controllable crystallinity will have great potential for various applications in fuel, cells, batteries, electronics devices and chemical sensors.

On Structural Stability of Nanostructured Aluminium

2005 ◽  
Vol 475-479 ◽  
pp. 3501-3504 ◽  
Author(s):  
E.J. Van Der Kolff ◽  
M. Berkahn ◽  
Richard Wuhrer ◽  
Wing Yiu Yeung
Keyword(s):  
Electron Microscopy ◽  
Strain Energy ◽  
Equal Channel Angular Extrusion ◽  
Stress And Strain ◽  
X Ray ◽  
Annealing Temperatures ◽  
Fine Grain ◽  
Grain Structures ◽  
Transmission Electron ◽  
The Stability

Nano- and submicron-structured aluminium was produced by equal channel angular extrusion with a total strain of ~17. Large residual stress and strain energy were built up in the extruded metal and subsequent heat treatments were applied to investigate the stability of the nanostructures. X-ray diffractometry and transmission electron microscopy were performed to evaluate the microstructural changes in the nanograin metal. It was found that the nanostructures remained stable at temperatures up to 250oC. Above 250oC, changes in the major x-ray peak reflections became evident, suggesting substantial grain growth had occurred. Electron microscopy confirmed that at low annealing temperatures, the fine grain structures were stable and indeed became more equiaxed and well defined.

Characterization of Tib2/TISI2 Bilayer Structure Deposited by Sputtering

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg
Keyword(s):  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Effective Diffusion ◽  
Barrier Properties ◽  
Titanium Boride ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Structural And Electrical Properties

AbstractBilayer of TiB2/TiSi2 was deposited by magnetron co-sputtering on silicon and alumina substrates, and this structure was investigated for structural and electrical properties. Substrate bias and annealing in vacuum have been applied to vary the film properties. X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) were used to characterize the structure, and chemical composition was characterized by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Resistivity was measured by four probe method. Diffusion barrier properties were studied by AES. As deposited films are amorphous with resistivities of about 40 μΩcm. Post deposition annealing in vacuum shows that the amorphous titanium boride film is very stable. Crystallization starts above 1000°C as seen by XRD, and the crystallization temperature depends on the thickness of TiB2. TiSi2 C54 forms in the temperature range 586°C - 922°C, when TiB2 still remains in amorphous form. The TiSi2 sublayer serves as an additional effective diffusion barrier, preventing outdiffusion of boron from TiB2 into the Si substrate.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Texture and Microstructure Effects on Electromigration Behavior of Aluminum Metallization

1991 ◽  
Vol 225 ◽  
Author(s):  
D. B. Knorr ◽  
K. P. Rodbell ◽  
D. P. Tracy
Keyword(s):  
Grain Size ◽  
Standard Deviation ◽  
Pure Aluminum ◽  
Time To Failure ◽  
X Ray Diffraction ◽  
Aluminum Films ◽  
Failure Data ◽  
Transmission Electron ◽  
Aluminum Metallization ◽  
Microstructure Effects

ABSTRACTPure aluminum films are deposited under a variety of conditions to vary the crystallographic texture. After patterning and annealing at 400°C for 1 hour, electromigration tests are performed at several temperatures. Failure data are compared on the basis of t50 and standard deviation. Microstructure is quantified by transmission electron microscopy for grain size and grain size distribution and by X-ray diffraction for texture. A strong (111) texture significantly improves the electromigration lifetime and decreases the standard deviation in time to failure. This improvement correlates with both the fraction and sharpness of the (111) texture component.

scholarly journals A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Ruei-Cheng Lin ◽  
Tai-Kuang Lee ◽  
Der-Ho Wu ◽  
Ying-Chieh Lee
Keyword(s):  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
High Entropy Alloy ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
High Entropy ◽  
Transmission Electron ◽  
Thin Film Resistors

Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR).

The Evaluation of TiTe2 as a Diffusion Barrier in the Formation of Low Thermal Conductivity Nanolaminates with Bi2Te3 and Sb2Te3

2010 ◽  
Vol 74 ◽  
pp. 38-47
Author(s):  
Clay Mortensen ◽  
Paul Zschack ◽  
David C. Johnson
Keyword(s):  
Thermal Conductivity ◽  
Diffusion Barrier ◽  
Self Assembly ◽  
Low Temperatures ◽  
Annealing Temperature ◽  
The Self ◽  
High Angle ◽  
X Ray Diffraction ◽  
Amorphous Precursor ◽  
X Ray

The evolution of designed [(Ti-Te)]x[(Sb-Te)]y, [(Bi-Te)]x[(Sb-Te)]y, [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]y and [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors were followed as a function of annealing temperature and time using both low and high angle x-ray diffraction techniques to probe the self assembly into nanolaminate materials. The [(Bi-Te)]x[(Sb-Te)]y precursors were found to interdiffuse at low temperatures to form a (BixSb1-x)2Te3 alloy. The [(Ti-Te)]x[(Bi-Te)]y and [(Ti-Te)]x[(Sb-Te)]y precursors formed ordered nanolaminates [{(TiTe2)}1.35]x[Bi2Te3]y and [{(TiTe2)}1.35]x[Sb2Te3]y respectively. The [(Ti-Te)]w[(Bi-Te)]x[(Sb-Te)]x precursors formed [{(TiTe2)}1.35]w[(Bi0.5Sb0.5)2Te3]2x nanolaminates on annealing, as the bismuth and antimony layers interdiffused. Over the range of TiTe2 thicknesses used in [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors, Bi and Sb were found to interdiffuse through the 2-4 nm thick Ti-Te layers, resulting in the formation of (BixSb1-x)2Te3 alloy layers as part of the final nanolaminated products. When the Bi-Te and Sb-Te thicknesses were equal in the amorphous precursors, symmetric [{(TiTe2)}1.35]m[(Bi0.5Sb0.5)2Te3]n nanolamiantes were formed. When the thicknesses of Bi-Te and Sb-Te layers were not equal in the amorphous precursor, asymmetric [(TiTe2)1.35]m[(BixSb1-x)2Te3]n[(TiTe2)1.35]m[(BixSb1-x)2Te3]p nanolaminates were formed. These results imply that to form (A)w(B)x(C)y nanolaminates using designed layered precursors all three components must be immiscible. To form (A)x(B)y(A)x(C)z nanolaminates, the components must be immiscible or the precursor to the A component and the A component itself must be an effective interdiffusion barrier preventing B and C from mixing.

Void Morphology In NiAl

2000 ◽  
Vol 646 ◽  
Author(s):  
M. Zakaria ◽  
P.R. Munroe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Energy ◽  
Annealing Temperature ◽  
Void Formation ◽  
Dislocation Climb ◽  
Annealing Temperatures ◽  
Relative Incidence ◽  
Transmission Electron ◽  
Void Shape

ABSTRACTVoid formation in stoichiometric NiAl was studied through controlled heat treatments and transmission electron microscopy. Voids formed at temperatures as low as 400°C, but dissolved during annealing at 900°C. Both cuboidal and rhombic dodecahedral voids were observed, often at the same annealing temperature. At higher annealing temperatures (>800°C) extensive dislocation climb was noted. The relative incidence of void formation and dislocation climb can be related to the mobility of vacancies at each annealing temperature. Further, differences in void shape can be described in terms of their relative surface energy and mode of nucleation.

Effect of Nitridation Magnetic Properties of Nanocrystalline Fe-Co Alloy Powders

2010 ◽  
Vol 654-656 ◽  
pp. 1106-1109
Author(s):  
Ya Qiong He ◽  
Chang Hui Mao ◽  
Jian Yang
Keyword(s):  
Grain Size ◽  
Magnetic Properties ◽  
Alloy Powder ◽  
High Energy ◽  
X Ray Diffraction ◽  
Powder Mixtures ◽  
X Ray ◽  
Transmission Electron ◽  
Nitridation Temperature ◽  
Microstructure And Magnetic Properties

Nanocrystalline Fe-Co alloy powders, which were prepared by high-energy mechanical milling, were nitrided under the mixing gas of NH3/H2 in the temperature range from 380°C to 510°C. X-ray diffraction (XRD) was used to analyze the grain size and reaction during the processing. The magnetic properties of the nitrided powders were measured by Vibrating Sample Magnetometer (VSM). The results show that with the appearance of Fe4N phase after nitride treatment, and the grain-size of FeCo phase decreases with the increase of nitridation temperature between 380°C to 450°C.The saturation magnetization of nitrided alloy powder treated at 480°C is about 18% higher than that of the initial Fe-Co alloy powder, accompanied by the reduction of the coercivity. Transmission electron microscope (TEM) was used, attempting to further analyze the effect of Fe4N phase on microstructure and magnetic properties of the powder mixtures.

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