(Invited) Equivalent Oxide Thickness Correction in the High-k/In0.53Ga0.47As/InP System

2019 ◽  
Vol 33 (3) ◽  
pp. 433-444 ◽  
Author(s):  
Paul K. Hurley ◽  
Rathnait Long ◽  
Terrance O'Regan ◽  
Eamon O'Connor ◽  
Scott Monaghan ◽  
...  
Keyword(s):  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K ◽  
Thickness Correction

Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness

2005 ◽  
Vol 87 (23) ◽  
pp. 232906 ◽  
Author(s):  
Jiang Lu ◽  
Yue Kuo
Keyword(s):  
Tantalum Oxide ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

2006 ◽  
Vol 88 (13) ◽  
pp. 132107 ◽  
Author(s):  
A. Ritenour ◽  
A. Khakifirooz ◽  
D. A. Antoniadis ◽  
R. Z. Lei ◽  
W. Tsai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Metal Gate ◽  
High K

Electrical Properties in High-k HfO[sub 2] Capacitors with an Equivalent Oxide Thickness of 9 Å on Ru Metal Electrode

2005 ◽  
Vol 8 (6) ◽  
pp. F17 ◽  
Author(s):  
Jeon-Ho Kim ◽  
Soon-Gil Yoon ◽  
Seung-Jin Yeom ◽  
Hyun-Kyung Woo ◽  
Deok-Sin Kil ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Electrode ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics

2013 ◽  
Vol 699 ◽  
pp. 422-425 ◽  
Author(s):  
K.C. Lin ◽  
C.H. Chou ◽  
J.Y. Chen ◽  
C.J. Li ◽  
J.Y. Huang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Property ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gate Dielectrics ◽  
Bottom Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y2O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon

2006 ◽  
Vol 917 ◽  
Author(s):  
H. Joerg Osten ◽  
Malte Czernohorsky ◽  
Eberhard Bugiel ◽  
Dirk Kuehne ◽  
Andreas Fissel
Keyword(s):  
Molecular Beam ◽  
Oxygen Supply ◽  
Oxide Thickness ◽  
Interface Structure ◽  
Equivalent Oxide Thickness ◽  
Lanthanide Oxides ◽  
Partial Pressures ◽  
High K ◽  
Current Densities ◽  
Optimized Conditions

AbstractWe investigated the influence of additional oxygen supply and temperature during the growth of thin Gd2O3 layers on Si(001) with molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly; however too high oxygen partial pressures lead to an increase in the lower permittivity interfacial layer thickness. The growth temperature mainly influences the dielectric gate stack properties due to changes of the Gd2O3/Si interface structure. Optimized conditions (600 °C, pO2 = 5·10-7 mbar) were found to achieve equivalent oxide thickness values below 1 nm accompanied by leakage current densities below 1 mA/cm2 at 1 V.

Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions

2009 ◽  
Vol 12 (5) ◽  
pp. G17 ◽  
Author(s):  
S. Van Elshocht ◽  
C. Adelmann ◽  
P. Lehnen ◽  
S. De Gendt
Keyword(s):  
Rare Earth ◽  
Oxide Thickness ◽  
Thickness Reduction ◽  
Equivalent Oxide Thickness ◽  
Gate Stacks ◽  
High K

Electrical Characteristics of Crystalline Gd2O3 Film on Si (111): Impacts of Growth Temperature and Post Deposition Annealing

2010 ◽  
Vol 1252 ◽  
Author(s):  
Gang Niu ◽  
Bertrand Vilquin ◽  
Nicolas Baboux ◽  
Guillaume Saint-Girons ◽  
Carole Plossu ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Defect Density ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
Optimal Temperature ◽  
Post Deposition Annealing ◽  
High K ◽  
Electrical Characterizations ◽  
Post Deposition

AbstractThis work reports on the epitaxial growth of crystalline high-k Gd2O3 on Si (111) by Molecular Beam Epitaxy (MBE) for CMOS gate application. Epitaxial Gd2O3 films of different thicknesses have been deposited on Si (111) between 650°C~750°C. Electrical characterizations reveal that the sample grown at the optimal temperature (700°C) presents an equivalent oxide thickness (EOT) of 0.73nm with a leakage current density of 3.6×10-2 A/cm2 at |Vg-VFB|=1V. Different Post deposition Annealing (PDA) treatments have been performed for the samples grown under optimal condition. The Gd2O3 films exhibit good stability and the PDA process can effectively reduce the defect density in the oxide layer, which results in higher performances of the Gd2O3/Si (111) capacitor.

Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

2009 ◽  
Vol 94 (26) ◽  
pp. 262904 ◽  
Author(s):  
S. Abermann ◽  
O. Bethge ◽  
C. Henkel ◽  
E. Bertagnolli
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
Layer Deposition ◽  
High K

Electrical Characteristics of TaOxNy for High-k MOS Gate Dielectric Applications

2000 ◽  
Vol 611 ◽  
Author(s):  
Kiju Im ◽  
Hyungsuk Jung ◽  
Sanghun Jeon ◽  
Dooyoung Yang ◽  
Hyunsang Hwang
Keyword(s):  
Electron Spectroscopy ◽  
Gate Dielectric ◽  
Tantalum Oxide ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Electrical Characteristics ◽  
Equivalent Oxide Thickness ◽  
Ammonia Treatment ◽  
High K ◽  
Mos Gate

ABSTRACTIn this paper, we report a process for the preparation of high quality amorphous tantalum oxynitride (TaOxNy) via ammonia annealing of Ta2O5 followed by wet reoxidation for use in gate dielectric applications. Compared with tantalum oxide(Ta2O5), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We confirmed nitrogen incorporation in the tantalum oxynitride (TaOxNy) by Auger Electron Spectroscopy. By optimizing the nitridation and reoxidation process, we obtained an equivalent oxide thickness of less than 1.6nm and a leakage current of less than 10mA/cm2 at -1.5V. Compared with NH3 nitridation, nitridation of Ta2O5 in ND3 improve charge trapping and charge-to-breakdown characteristics of tantalum oxynitride.

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