Plasma Enhanced Chemical Vapor Deposition of Manganese on Low-k Dielectrics for Copper Diffusion Barrier Application

2012 ◽  
Vol 2 (3) ◽  
pp. P25-P27 ◽  
Author(s):  
N. Jourdan ◽  
Y. Barbarin ◽  
K. Croes ◽  
Y. Kong Siew ◽  
S. Van Elshocht ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Diffusion ◽  
Low K

Consecutive Selective Chemical Vapor Deposition of Copper and Aluminum from Organometallic Precursors

1992 ◽  
Vol 282 ◽  
Author(s):  
Stephen M. Fine ◽  
Paul N. Dyer ◽  
John A. T. Norman
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rapid Thermal Anneal ◽  
Aluminum Metallization ◽  
Barrier Surface ◽  
Aluminum Deposition ◽  
Organometallic Precursors ◽  
Copper Aluminum

ABSTRACTFor the next generation of integrated microcircuits, there exists a need in the electronics industry for high conductivity, electromigration resistant metallization that can be deposited selectivity by chemical vapor deposition techniques. This paper describes a new process for depositing copper/aluminum metallization selectively onto diffusion barrier surfaces in two consecutive steps. First copper is selectively deposited by OMCVD ontoa patterned diffusion barrier surface using a Cu(I)(hfac)(olefin) precursor. Selective copper deposition onto tungsten or titanium nitride is achieved at 150°C and 100 mtorr. Aluminum is then selectively deposited onto copper using trimethylaminealane as the OMCVDprecursor. Trimethylaminealane gives good selectivity for aluminum deposition onto coppersurfaces over a temperature range of 100–120°C without the use of a surface activating agent. A small amount of copper diffuses into the as deposited aluminum layer atthe low deposition temperature. Complete diffusion of copper into aluminum is achieved by a rapid thermal anneal at a higher temperature. The selectivity of aluminum deposition onto copper surfaces is far superior to that observed for aluminum deposition onto other metal surfaces.

Wafer level microarcing model in 90nm chemical-vapor deposition low-k via etch on 300mm silicon-on-insulator substrate

2006 ◽  
Vol 24 (4) ◽  
pp. 1404-1409 ◽  
Author(s):  
Hai Cong ◽  
Chun Hui Low ◽  
Yelehanka Ramachandramurthy Pradeep ◽  
Xin Zhang ◽  
Perera Chandima ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Wafer Level ◽  
Low K ◽  
Insulator Substrate
Sign in / Sign up

Export Citation Format

Share Document