Accurate Determination of Dislocation Density in GaN Using Chemical Mechanical Polishing

ABSTRACTWe discuss applications of optoacoustic film thickness metrology for characterization of copper chemical-mechanical polishing (CMP). We highlight areas where the use of optoacoustics for CMP characterization provides data complementary to that obtained by other techniques because of its ability to directly measure film thickness with high spatial resolution in a rapid, non-destructive manner. Examples considered include determination of planarization length, measurement of film thickness at intermediate stages of polish, and measurement of arrays of metal lines.

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High Quality Germanium Photodiodes on Silicon Substrates Using an Intermediate Chemical Mechanical Polishing Step

MRS Proceedings ◽

10.1557/proc-486-187 ◽

1997 ◽

Vol 486 ◽

Cited By ~ 1

Author(s):

Srikanth B. Samavedam ◽

Matthew T. Currie ◽

Thomas A. Langdo ◽

Steve M. Ting ◽

Eugene A. Fitzgerald

Keyword(s):

Dislocation Density ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Quantum Yields ◽

Threading Dislocation ◽

Thermal Mismatch ◽

High Quality ◽

Si Substrates ◽

Threading Dislocation Density ◽

Graded Layers

AbstractGermanium (Ge) photodiodes are capable of high quantum yields and can operate at gigahertz frequencies in the 1–1.6 μm wavelength regime. The compatibility of SiGe alloys with Si substrates makes Ge a natural choice for photodetectors in Si-based optoelectronics applications. The large lattice mismatch (≈4%) between Si and Ge, however, leads to the formation of a high density of misfit and associated threading dislocations when uniform Ge layers are grown on Si substrates. High quality Ge layers were grown on relaxed graded SiGe/Si layers by ultra-high vacuum chemical vapor deposition (UHVCVD). Typically, as the Ge concentration in the graded layers increases, strain fields from underlying misfit dislocations result in increased surface roughness and the formation of dislocation pile-ups. The generation of pile-ups increases the threading dislocation density in the relaxed layers. In this study the pileup formation was minimized by growing on miscut (001) substrates employing a chemical mechanical polishing (CMP) step within the epitaxial structure. Other problems such as the thermal mismatch between Si and Ge, results in unwanted residual tensile stresses and surface microcracks when the substrates are cooled from the growth temperature. Compressive strain has been incorporated into the graded layers to overcome the thermal mismatch problem, resulting in crack-free relaxed cubic Ge on Si at room temperature. The overall result of the CMP step and the growth modifications have eliminated dislocation pile-ups, decreased gas-phase nucleation of particles, and eliminated the increase in threading dislocation density that occurs when grading to Ge concentrations greater than 70% Ge. The threading dislocation density in the Ge layers determined through plan view transmission electron microscopy (TEM) and etch pit density (EPD) was found to be in the range of 2 × 106/cm2. Ge p-n diodes were fabricated to assess the electronic quality and prove the feasibility of high quality photodetectors on Si substrates.

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Acid etching for accurate determination of dislocation density in GaN

Journal of Electronic Materials ◽

10.1007/s11664-002-0091-x ◽

2002 ◽

Vol 31 (5) ◽

pp. 402-405 ◽

Cited By ~ 26

Author(s):

Xueping Xu ◽

R. P. Vaudo ◽

J. Flynn ◽

G. R. Brandes

Keyword(s):

Dislocation Density ◽

Accurate Determination ◽

Acid Etching

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A quantitative approach to inner shell losses

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010977x ◽

1978 ◽

Vol 36 (1) ◽

pp. 526-527 ◽

Cited By ~ 2

Author(s):

R.D. Leapman ◽

P. Rez ◽

D.F. Mayers

Keyword(s):

Energy Transfer ◽

Cross Section ◽

Cross Sections ◽

Accurate Determination ◽

Background Intensity ◽

Core Excitation ◽

Quantitative Basis ◽

Cross Section Differential ◽

Bound Electrons

Microanalysis by EELS has been developing rapidly and though the general form of the spectrum is now understood there is a need to put the technique on a more quantitative basis (1,2). Certain aspects important for microanalysis include: (i) accurate determination of the partial cross sections, σx(α,ΔE) for core excitation when scattering lies inside collection angle a and energy range ΔE above the edge, (ii) behavior of the background intensity due to excitation of less strongly bound electrons, necessary for extrapolation beneath the signal of interest, (iii) departures from the simple hydrogenic K-edge seen in L and M losses, effecting σx and complicating microanalysis. Such problems might be approached empirically but here we describe how computation can elucidate the spectrum shape.The inelastic cross section differential with respect to energy transfer E and momentum transfer q for electrons of energy E0 and velocity v can be written as

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Fast calibration of CBED patterns for quantitative analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100149209 ◽

1993 ◽

Vol 51 ◽

pp. 674-675

Author(s):

M.A. Gribelyuk ◽

M. Rühle

Keyword(s):

Reciprocal Lattice ◽

Accurate Determination ◽

Incident Beam ◽

Crystal Thickness ◽

Structure Model ◽

Beam Direction ◽

Transmitted Beam ◽

Reciprocal Vector ◽

On Line

A new method is suggested for the accurate determination of the incident beam direction K, crystal thickness t and the coordinates of the basic reciprocal lattice vectors V1 and V2 (Fig. 1) of the ZOLZ plans in pixels of the digitized 2-D CBED pattern. For a given structure model and some estimated values Vest and Kest of some point O in the CBED pattern a set of line scans AkBk is chosen so that all the scans are located within CBED disks.The points on line scans AkBk are conjugate to those on A0B0 since they are shifted by the reciprocal vector gk with respect to each other. As many conjugate scans are considered as CBED disks fall into the energy filtered region of the experimental pattern. Electron intensities of the transmitted beam I0 and diffracted beams Igk for all points on conjugate scans are found as a function of crystal thickness t on the basis of the full dynamical calculation.

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Computer-Assisted High-Re Solution TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100179567 ◽

1990 ◽

Vol 48 (1) ◽

pp. 162-163

Author(s):

F.A. Ponce ◽

H. Hikashi

Keyword(s):

Signal To Noise Ratio ◽

Accurate Determination ◽

Computer Software ◽

Video Camera ◽

Image Contrast ◽

Objective Lens ◽

Computer Assisted ◽

Optical Parameters ◽

Astigmatism Correction

The determination of the atomic positions from HRTEM micrographs is only possible if the optical parameters are known to a certain accuracy, and reliable through-focus series are available to match the experimental images with calculated images of possible atomic models. The main limitation in interpreting images at the atomic level is the knowledge of the optical parameters such as beam alignment, astigmatism correction and defocus value. Under ordinary conditions, the uncertainty in these values is sufficiently large to prevent the accurate determination of the atomic positions. Therefore, in order to achieve the resolution power of the microscope (under 0.2nm) it is necessary to take extraordinary measures. The use of on line computers has been proposed [e.g.: 2-5] and used with certain amount of success.We have built a system that can perform operations in the range of one frame stored and analyzed per second. A schematic diagram of the system is shown in figure 1. A JEOL 4000EX microscope equipped with an external computer interface is directly linked to a SUN-3 computer. All electrical parameters in the microscope can be changed via this interface by the use of a set of commands. The image is received from a video camera. A commercial image processor improves the signal-to-noise ratio by recursively averaging with a time constant, usually set at 0.25 sec. The computer software is based on a multi-window system and is entirely mouse-driven. All operations can be performed by clicking the mouse on the appropiate windows and buttons. This capability leads to extreme friendliness, ease of operation, and high operator speeds. Image analysis can be done in various ways. Here, we have measured the image contrast and used it to optimize certain parameters. The system is designed to have instant access to: (a) x- and y- alignment coils, (b) x- and y- astigmatism correction coils, and (c) objective lens current. The algorithm is shown in figure 2. Figure 3 shows an example taken from a thin CdTe crystal. The image contrast is displayed for changing objective lens current (defocus value). The display is calibrated in angstroms. Images are stored on the disk and are accessible by clicking the data points in the graph. Some of the frame-store images are displayed in Fig. 4.

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