Instability of Threshold Voltage of Single-Crystalline Si Thin-Film Transistors on Flexible Substrate

2006 ◽  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Flexible Substrate ◽  
Single Crystalline ◽  
Si Thin Film

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

2013 ◽  
Vol 103 (20) ◽  
pp. 203501 ◽  
Author(s):  
Uio-Pu Chiou ◽  
Jia-Min Shieh ◽  
Chih-Chao Yang ◽  
Wen-Hsien Huang ◽  
Yo-Tsung Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Metal Gate ◽  
Si Thin Film ◽  
Nanocrystalline Si

Threshold-Voltage Instability of Single-Crystal Si Thin-Film Transistors Fabricated on Plastic Substrate

2019 ◽  
Vol 3 (8) ◽  
pp. 81-85
Author(s):  
Hao-Chih Yuan ◽  
Zhenqiang Ma ◽  
Max G. Lagally ◽  
George E. Celler
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Plastic Substrate ◽  
Voltage Instability ◽  
Si Thin Film

Effect of Dynamic Bias Stress (AC) In Short-Channel (L=1.5μm) p-Type polycrystalline Silicon (poly-Si) Thin Film Transistors (TFTs) on the glass substrate

2011 ◽  
Vol 1321 ◽  
Author(s):  
Sung-Hwan Choi ◽  
Yeon-Gon Mo ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Glass Substrate ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Short Channel ◽  
Bias Stress ◽  
P Type ◽  
Long Channel ◽  
Si Thin Film

ABSTRACTWe have investigated the stability of short channel (1.5μm) p-Type polycrystalline silicon (poly-Si) Thin Film Transistors (TFTs) on the glass substrate under AC bias stress. The variation of threshold voltage in short channel poly-Si TFT was considerably higher than that of long channel poly-Si TFT. Threshold voltage of the short channel TFT was considerably moved to the positive direction during AC bias stress, whereas the threshold voltage of a long channel was rarely moved. The variation of threshold voltage in the short channel p-type TFT under AC bias stess was more compared to that under DC bias stress. The threshold voltage of short channel (L=1.5μm) poly-Si TFT was increased about -7.44V from -0.305V to -7.745V when VGS = 5 (base value) ~ -15V (peak value), VDS = -15V was applied for 3,000 seconds. This positive shift of threshold voltage and significantly degraded s-swing value in the short channel TFT under dynamic stress (AC) may be due to the increase of the stress-induced trap state density at gate insulator / channel interface region.

Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors

2010 ◽  
Vol 57 (11) ◽  
pp. 3186-3189 ◽  
Author(s):  
Hung-Chang Sun ◽  
Ching-Fang Huang ◽  
Yen-Ting Chen ◽  
Ting-Yun Wu ◽  
Chee Wee Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Si Thin Film

Low Temperature Poly-Si on Flexible Polymer Substrates for Active Matrix Displays and Other Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Nigel D. Young ◽  
Michael J. Trainor ◽  
Soo-Young Yoon ◽  
David J. McCulloch ◽  
Richard W. Wilks ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Polymer Materials ◽  
Polymer Substrates ◽  
Active Matrix ◽  
Flexible Polymer ◽  
Active Matrix Displays ◽  
Si Thin Film

AbstractA variety of polymer materials including polyimide (PI), polyarylate (PAR), polynorbonene (PNB) and polyethersulphone (PES) have been studied for use as substrates in the formation of active matrix displays based upon polycrystalline silicon (poly-Si) thin film transistors (TFTs). A process used to fabricate transflective mobile phone displays at 250°C on such substrates is described in detail. The NMOS TFTs show a mobility of 100cm2/Vs, and a threshold voltage of 3.9V; the PMOS devices have a mobility of 52cm2/Vs, and a threshold voltage of -6V. Issues relating to performance of these devices, yield of the arrays, and manufacturability are discussed.

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