Advanced Application of Resistivity and Hall Effect Measurements to Characterization of Silicon

2009 ◽  
Keyword(s):  
Hall Effect ◽  
Hall Effect Measurements

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

The characterization of pure and niobium-doped crystals of strontium titanate using Hall, electrical conductivity, and optical absorption data

1978 ◽  
Vol 56 (4) ◽  
pp. 453-467 ◽  
Author(s):  
G. Perluzzo ◽  
J. Destry
Keyword(s):  
Heat Treatment ◽  
Electrical Conductivity ◽  
Optical Absorption ◽  
Hall Effect ◽  
Strontium Titanate ◽  
Defect States ◽  
Absorption Data ◽  
Niobium Doped ◽  
Hall Effect Measurements

A description is given of the heat treatment, under controlled conditions, of crystals of strontium titanate, both pure and niobium-doped, and of the effect of this treatment on the defect states in this material. Our analysis is based on evaluation of the results of electrical conductivity and Hall effect measurements, and those of optical absorption.

scholarly journals Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

2017 ◽  
Vol 10 (4) ◽  
pp. 046601 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Yuji Kiuchi ◽  
Mitsuru Sometani ◽  
Shinsuke Harada ◽  
Dai Okamoto ◽  
...  
Keyword(s):  
Hall Effect ◽  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Hall Effect Measurements

Characterization of unintentionally or lightly doped polysilicon films by improved Hall effect measurements

1997 ◽  
Vol 301 (1-2) ◽  
pp. 230-235 ◽  
Author(s):  
F. Le Bihan ◽  
B. Fortin ◽  
S. Cauneau ◽  
D. Briand ◽  
O. Bonnaud
Keyword(s):  
Hall Effect ◽  
Polysilicon Films ◽  
Hall Effect Measurements

Synthesis, Characterization and Hall Effect Measurements of Nanocrystalline ZnO Thin Films

2012 ◽  
Vol 510-511 ◽  
pp. 186-193 ◽  
Author(s):  
Ashari Maqsood ◽  
M. Islam ◽  
M. Ikram ◽  
S. Salam ◽  
S. Ameer
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Morphological Studies ◽  
Hall Effect Measurements ◽  
Scherrer Formula

ZnO thin films were prepared by sol-gel method. Prepared thin films were then characterized by SEM, XRD, EDX and Hall effect measurements. SEM confirmed the morphological studies of ZnO thin films. Crystallite size is calculated using the Scherrer formula. Crystallite and grain sizes are obtained through XRD and SEM. EDS analysis confirms mass percentage of ZnO deposited. Decreasing trend of magneto resistance with temperature is observed. The optical transmission spectra of the solgel deposited ZnO thin films showed high transmittance (>70%) in the visible region and indicates that the transmittance of ZnO films gradually decreased as the thickness increased. Decreasing trend of resistivity and sheet resistance with thickness are also observed. The IV characterization of ZnO thin films under influence of UV and dark conditions are reported. The dc electrical resistivity data follow the hoping model.

Advanced Application of Resistivity and Hall Effect Measurements to Characterization of Silicon

2019 ◽  
Vol 25 (3) ◽  
pp. 25-34 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Galina I. Voronkova ◽  
Anna V. Batunina ◽  
Robert Falster
Keyword(s):  
Hall Effect ◽  
Hall Effect Measurements

Defects Characterization of Arsenic Implanted Silicon by Ac Hall Effect Measurements

1986 ◽  
Vol 71 ◽  
Author(s):  
H. Jaouen ◽  
G. Ghibaudo ◽  
C. Christofides
Keyword(s):  
Hall Effect ◽  
Long Range ◽  
Silicon Films ◽  
Experimental Results ◽  
Isochronal Annealing ◽  
Transport Models ◽  
Hall Effects ◽  
Hall Effect Measurements

AbstractAC and DC Hall effects measurements as a function of temperature (77-300K) and frequency ( 1Hz-100KHz) have been performed to characterize Implanted Silicon films. This technique enables the determination of the annihilation processes of defects In such layers as a function of temperature of isochronal anneallngs (300°C to 1100°C during 1 hour). The experimental results are discussed with respect to proper transport models based on short and long range disorder considerations in order to find out the features of defects and Inhomogeneities arising from implantation and their thermal annihilation after isochronal annealing.

Characterization of hydrogen in metallic glasses by the use of Hall effect measurements

2003 ◽  
Vol 356-357 ◽  
pp. 575-578 ◽  
Author(s):  
P.E.V. de Miranda ◽  
J.S.F. Coutinho ◽  
A.C.F. Mesquita
Keyword(s):  
Hall Effect ◽  
Metallic Glasses ◽  
Hall Effect Measurements

Characterization of A-Axis-Oriented YBa2Cu3O7 Thin Films: Hall Effect Measurements

1994 ◽  
pp. 1015-1018
Author(s):  
N. A. Fortune ◽  
K. Murata ◽  
Y. Nishihara ◽  
W. Ito ◽  
T. Morishita
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Hall Effect Measurements

Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 483-486 ◽  
Author(s):  
Viktoryia Uhnevionak ◽  
Alex Burenkov ◽  
Christian Strenger ◽  
Vincent Mortet ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Hall Effect ◽  
Gate Voltage ◽  
Strong Dependence ◽  
Relaxation Times ◽  
Hall Factor ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Hall Effect Measurements ◽  
First Time

For the characterization ofn-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the respective scattering relaxation times. The results of the calculation reveal a strong dependence of the Hall factor on the gate voltage. Depending on the gate voltage applied, the values of the Hall factor vary between 1.3 and 1.5. Sheet carrier density and drift mobility values derived from the Hall-effect measurements using our new gate-voltage-dependent Hall factor show very good agreement with simulations performed with Sentaurus Device of Synopsys.

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