Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 483-486 ◽  
Author(s):  
Viktoryia Uhnevionak ◽  
Alex Burenkov ◽  
Christian Strenger ◽  
Vincent Mortet ◽  
Elena Bedel-Pereira ◽  
...  

For the characterization ofn-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the respective scattering relaxation times. The results of the calculation reveal a strong dependence of the Hall factor on the gate voltage. Depending on the gate voltage applied, the values of the Hall factor vary between 1.3 and 1.5. Sheet carrier density and drift mobility values derived from the Hall-effect measurements using our new gate-voltage-dependent Hall factor show very good agreement with simulations performed with Sentaurus Device of Synopsys.

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.


1978 ◽  
Vol 56 (4) ◽  
pp. 453-467 ◽  
Author(s):  
G. Perluzzo ◽  
J. Destry

A description is given of the heat treatment, under controlled conditions, of crystals of strontium titanate, both pure and niobium-doped, and of the effect of this treatment on the defect states in this material. Our analysis is based on evaluation of the results of electrical conductivity and Hall effect measurements, and those of optical absorption.


1982 ◽  
Vol 80 (3) ◽  
pp. 403-426 ◽  
Author(s):  
O S Andersen ◽  
R U Muller

Monazomycin (a positively charged, polyene-like antibiotic) induces voltage-dependent conductance changes in lipid bilayer membranes when added to one of the bathing solutions. These conductance changes have generally been attributed to the existence of channels spanning the membrane. In this article we characterize the behavior of the individual conductance events observed when adding small amounts of monazomycin to one side of a lipid bilayer. We find that there are several apparent channel types with one or sometimes two amplitudes predominating. We find further that these fairly similar amplitudes represent two different states of the same fundamental channel entity, presumed to be the monazomycin channel. The current-voltage characteristics of these channels are weakly hyperbolic functions of applied potential. The average lifetimes are essentially voltage independent (between 50 and 400 mV). The average channel intervals, on the other hand, can be strongly voltage dependent, and we can show that the time-averaged conductance of a membrane is proportional to the average channel frequency.


2017 ◽  
Vol 10 (4) ◽  
pp. 046601 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Yuji Kiuchi ◽  
Mitsuru Sometani ◽  
Shinsuke Harada ◽  
Dai Okamoto ◽  
...  

1997 ◽  
Vol 301 (1-2) ◽  
pp. 230-235 ◽  
Author(s):  
F. Le Bihan ◽  
B. Fortin ◽  
S. Cauneau ◽  
D. Briand ◽  
O. Bonnaud

Author(s):  
Mary-Anne Nguyen ◽  
Stephen A. Sarles

Our research focuses on creating smart materials that utilize synthetic cell membranes assembled at liquid interfaces for autonomic sensing, actuation, and energy conversion. Unlike single membrane assemblies, systems featuring many membranes have the potential to offer multi-functionality, greater transduction sensitivity, and even emergent behaviors in response to environmental stimuli, similar to living tissue, which utilizes networks of highly packed cells to accomplish tasks. Here, we present for the first time a novel microfluidic platform capable of generating a stream of alternating droplet compositions, i.e. A-B-A-B, and sequentially capturing these droplets in precise locations to enable the spontaneous formation of synthetic lipid bilayers between droplets of different compositions (i.e. A and B) in an enclosed substrate. This platform preserves a key feature of the droplet interface bilayer (DIB) method, which allows asymmetric conditions within and across the membrane to be prescribed by simply using droplets containing different species. In this work, we demonstrate the ability to assemble bilayers consisting of asymmetric lipid compositions and, separately, show that alternating droplets containing the same lipid type can also be used to control the direction of ion channel insertion. In the first study, A and B droplet types contain liposomes comprised of different lipid types, which are used to establish an asymmetric composition of the leaflets that make up the lipid bilayer. This asymmetry results in a dc, non-zero membrane potential, which we measure via membrane capacitance versus bias voltage. In the second study, alamethicin peptides are included in only one of the droplet types, which enable voltage-dependent insertion to occur only at one polarity. Cyclic voltammetry measurements are performed to confirm the direction of insertion of alamethicin channels in bilayers. Also, these results show the ability to perform simultaneously electrical measurements on multiple DIB, which increases the experimental capacity and efficiency of a microfluidic approach. The ability to produce alternating droplets in a high throughput manner with electrical access provides a system to investigate the effects of lipid asymmetry on the function of membrane proteins in a controlled model system.


2007 ◽  
Vol 995 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Li-Tao Yang ◽  
Kah-Wee Ang ◽  
Tsung-Yang Liow ◽  
Kian-Ming Tan ◽  
...  

AbstractIn this paper, the material and electrical characteristics of Nickel-Silicon-Carbon (NiSi:C) films were investigated for the first time to ascertain the compatibility of NiSi:C contacts to silicon-carbon (Si:C) source/drain stressors. The incorporation of 1 atomic percent of carbon was found to increase both the Ni2Si-to-NiSi and NiSi-to-NiSi2 transformation temperatures. Our results show that the incorporation of carbon stabilizes the interfacial and surface morphology of NiSi:C films. We speculate that the incorporated carbon segregates into the NiSi:C grain boundaries and suppresses film agglomeration and NiSi-to-NiSi2 phase transformation. X-ray diffraction analysis further revealed that the formed NiSi:C films possessed a preferred orientation. Current-voltage measurements for NiSi and NiSi:C n+/p junctions exhibit similar cumulative distribution for junction leakage indicating that carbon incorporation does not have a detrimental impact on the n+/p junction integrity. Our results suggest that NiSi:C is a suitable self-aligned contact metal silicide to n-channel MOSFETs with SiC S/D stressors in a similar manner to the way in which NiSiGe is used for p-channel MOSFETs with SiGe S/D stressors.


2012 ◽  
Vol 510-511 ◽  
pp. 186-193 ◽  
Author(s):  
Ashari Maqsood ◽  
M. Islam ◽  
M. Ikram ◽  
S. Salam ◽  
S. Ameer

ZnO thin films were prepared by sol-gel method. Prepared thin films were then characterized by SEM, XRD, EDX and Hall effect measurements. SEM confirmed the morphological studies of ZnO thin films. Crystallite size is calculated using the Scherrer formula. Crystallite and grain sizes are obtained through XRD and SEM. EDS analysis confirms mass percentage of ZnO deposited. Decreasing trend of magneto resistance with temperature is observed. The optical transmission spectra of the solgel deposited ZnO thin films showed high transmittance (>70%) in the visible region and indicates that the transmittance of ZnO films gradually decreased as the thickness increased. Decreasing trend of resistivity and sheet resistance with thickness are also observed. The IV characterization of ZnO thin films under influence of UV and dark conditions are reported. The dc electrical resistivity data follow the hoping model.


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