(Invited) In-Situ Study of Electric Double Layer and Ionic Transport at the Solid/Liquid Interface Using Scanning Probe Microscopy

2017 ◽  
Vol 19 (43) ◽  
pp. 29047-29052 ◽  
Author(s):  
Jiří Škvarla ◽  
Mária Kaňuchová ◽  
Andrey Shchukarev ◽  
Ivan Brezáni ◽  
Juraj Škvarla

We introduce a new method of evaluating the structure of electric double layer (EDL) at the native solid/liquid interface using cryogenic X-ray photoelectron spectroscopy technique.


Author(s):  
Sebastien Groh ◽  
Holger-dietrich Sassnick ◽  
Victor Ruiz ◽  
Joachim Dzubiella

The hydroxylation state of an oxide surface is a central property of its solid/liquid interface and its corresponding electrical double layer. This study integrated both a reactive force field (ReaxFF)...


2020 ◽  
Vol 10 (16) ◽  
pp. 5362-5385
Author(s):  
Leila Negahdar ◽  
Christopher M. A. Parlett ◽  
Mark A. Isaacs ◽  
Andrew M. Beale ◽  
Karen Wilson ◽  
...  

Many industrially important chemical transformations occur at the interface between a solid catalyst and liquid reactants. In situ and operando spectroscopies offer unique insight into the reactivity of such catalytically active solid–liquid interfaces.


1991 ◽  
Vol 237 ◽  
Author(s):  
Richard D. Robinson ◽  
Ioannis N. Miaoulis

ABSTRACTThis paper presents a new experimental method to investigate solid-liquid interface morphologies during Zone-Melting-Recrystallization at lower than the typical processing temperatures. Gallium films were used as a substitute for silicon films. In situ preliminary investigation identified three phenomena typically occurring during ZMR of silicon films: a) Transition from planar to dendritic to cellular morphologies was observed for different processing conditions; b) cell period proved to be dependant on scanning velocity; c) instabilities at the solidification interface at low heating strip temperatures were caused by supercooling and optical property variations as the material changed phase.


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