Characterization of Ferroelectric PZT Thin Films - Line Broadening Study (Using Grazing Incidence Geometry)

1991 ◽  
Vol 35 (A) ◽  
pp. 601-605
Author(s):  
Michael O. Eatough ◽  
Raymond P. Goehner ◽  
Thomas J. Headley ◽  
Bruce A. Tuttle
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Incidence Angle ◽  
Incident Angle ◽  
Grazing Incidence ◽  
Processing Parameters ◽  
Phase Changes ◽  
Incidence Geometry ◽  
Line Broadening

AbstractFerroelectric polycrystalline thin films are being pursued as materials for use in the next generation of radiation hardened nonvolatile semiconductor memories, optical switches and optical computers. Of particular interest are PZT films with a composition near the morphotropic phase boundary. In order to fully understand the the difference in electrical properties as a function of processing parameters it is necessary to fully characterize phase composition and crystallographic properties of these films. Since some films are produced by either spinning or dipping successive layers to obtain the desired thickness it was necessary to compare the properties of each layer.X-ray diffraction techniques employing parallel beam optics with grazing incidence angle geometry were used to characterize the films. Experimental procedures using sealed tube xray diffraction systems to determine differences in crystallite size and microstrain as a function of depth into the films are a rather unique application of this technique. Discerning the contribution to line broadening due to phase changes, grazing incident angle geometry, crystallite size and microstrain are key to the success of this technique.This paper discusses the experimental techniques employed and will demonstrate how we were able to successfully determine microstrain as a function of depth into the film. We use transmission electron microscopy (TEM) to aid in the characterization of the films. A brief description of the processing procedures used to produce the films is also provided.

Anomalous peaks in grazing incidence thin film X-ray diffraction

1994 ◽  
Vol 9 (1) ◽  
pp. 44-49 ◽  
Author(s):  
Richard A. Vaia ◽  
Maura S. Weathers ◽  
William A. Bassett
Keyword(s):  
Thin Films ◽  
Incidence Angle ◽  
Incident Angle ◽  
Grazing Incidence ◽  
Sample Surface ◽  
X Ray ◽  
Polymeric Thin Films ◽  
Diffraction Geometry ◽  
Sample Orientation ◽  
Diffuse Surface

Numerous spurious X-ray peaks were encountered during grazing incidence angle diffractometer scans of ceramic and polymeric thin films on crystalline and amorphous substrate materials. At least three possible sources of spurious peaks are identified. (1) At (2θ) values greater than ∼ 10°, Laue reflections from characteristic and Bremsstrahlung continuum radiation produce spurious peaks with a (2θ) dependence on X-ray incident angle and sample orientation. At (2θ) values less than 10°, (2) specular X-ray reflection from a boundary between two media of different indices of refraction and (3) diffuse surface scattering produces spurious peaks with a dependence on X-ray incident angle and sample surface topography. From an understanding of the spurious peaks, improved experimental techniques may be developed. Because these peaks can interfere significantly with grazing incidence diffractometer scans, it is particularly important to those making studies of thin films by this asymmetric diffraction geometry to be aware of the existence and origins of these spurious peaks.

scholarly journals Resonant enhancement of grazing incidence neutron scattering for the characterization of thin films

2021 ◽  
Vol 103 (23) ◽  
Author(s):  
Adrien Perrichon ◽  
Anton Devishvili ◽  
Kristina Komander ◽  
Gunnar K. Pálsson ◽  
Alexei Vorobiev ◽  
...  
Keyword(s):  
Thin Films ◽  
Neutron Scattering ◽  
Grazing Incidence ◽  
Resonant Enhancement

Crystallite size and microstrain: XRD line broadening analysis of AgSiN thin films

2019 ◽  
Vol 48 (6) ◽  
pp. 473-480 ◽  
Author(s):  
Umi Zalilah Mohamad Zaidi ◽  
A.R. Bushroa ◽  
Reza Rahbari Ghahnavyeh ◽  
Reza Mahmoodian
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Crystallite Size ◽  
Approximation Method ◽  
Ti6al4v Alloy ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Content Type ◽  
Three Samples

Purpose This paper aims to determine the crystallite size and microstrain values of AgSiN thin films using potential approach called approximation method. This method can be used as a replacement for other determination methods such as Williamson-Hall (W-H) plot and Warren-Averbach analysis. Design/methodology/approach The monolayer AgSiN thin films on Ti6Al4V alloy were fabricated using magnetron sputtering technique. To evaluate the crystallite size and microstrain values, the thin films were deposited under different bias voltage (−75, −150 and −200 V). X-ray diffraction (XRD) broadening profile along with approximation method were used to determine the crystallite size and microstrain values. The reliability of the method was proved by comparing it with scanning electron microscopy graph and W-H plot method. The second parameters’ microstrain obtained was used to project the residual stress present in the thin films. Further discussion on the thin films was done by relating the residual stress with the adhesion strength and the thickness of the films. Findings XRD-approximation method results revealed that the crystallite size values obtained from the method were in a good agreement when it is compared with Scherer formula and W-H method. Meanwhile, the calculations for thin films corresponding residual stresses were correlated well with scratch adhesion critical loads with the lowest residual stress was noted for sample with lowest microstrain and has thickest thickness among the three samples. Practical implications The fabricated thin films were intended to be used in antibacterial applications. Originality/value Up to the knowledge from literature review, there are no reports on depositing AgSiN on Ti6Al4V alloy via magnetron sputtering to elucidate the crystallite size and microstrain properties using the approximation method.

scholarly journals Characterization of Cobalt Sulfide Thin Films Synthesized from Acidic Chemical Baths

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Tizazu Abza ◽  
Dereje Gelanu Dadi ◽  
Fekadu Gashaw Hone ◽  
Tesfaye Chebelew Meharu ◽  
Gebremeskel Tekle ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Deposition Time ◽  
Average Crystallite Size ◽  
Cobalt Sulfide ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
Face Centered

Cobalt sulfide thin films were synthesized from acidic chemical baths by varying the deposition time. The powder X-ray diffraction studies indicated that there are hexagonal CoS, face-centered cubic Co3S4, and cubic Co9S8 phases of cobalt sulfide. The crystallite size of the hexagonal CoS phase decreased from 52.8 nm to 22.5 nm and that of the cubic Co9S8 phase increased from 11 nm to 60 nm as the deposition time increased from 2 hrs to 3.5 hrs. The scanning electron microscopic images revealed crack and pinhole free thin films with uniform and smooth background and few large polygonal grains on the surface. The band gap of the cobalt sulfide thin films decreased from 1.75 eV to 1.3 eV as the deposition time increased from 2 hrs to 3.5 hrs. The photoluminescence (PL) spectra of the films confirmed the emission of ultraviolet, violet, and blue lights. The intense PL emission of violet light at 384 nm had red shifted with increasing deposition time that could be resulted from the increase in the average crystallite size. The FTIR spectra of the films indicated the presence of OH, C-O-H, C-O, double sulfide, and Co-S groups. As the deposition time increased, the electrical resistivity of the cobalt sulfide thin films decreased due to the increase in both the crystallite size and the films’ thickness.

Grazing-incidence X-Ray Analysis of Surfaces and Thin Films

1991 ◽  
Vol 35 (A) ◽  
pp. 143-150 ◽  
Author(s):  
T. C. Huang
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Bragg Diffraction ◽  
Interface Roughness ◽  
Phase Identification ◽  
X Ray ◽  
Types Of Information

AbstractGrazing-incidence X-ray analysis techniques which are commonly used for the nondestructive characterization of surfaces and thin films are reviewed. The X-ray reflectivity technicue is used to study surface uniformity and oxidation, layer thickness and density, interface roughness and diffusion, etc. The grazing-incidence in-plane diffraction technique is used to determine in-plane crystallography of epitaxial films. The grazing-incidence asymmetric-Bragg diffraction is used for surface phase identification and structural depth profiling determination of polycrystalline films. Typical examples to illustrate the types of information that can be obtained by the techniques are presented.

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

Determination of Strain Distributions in Aluminum Thin Films as a Function of Temperature by the use of Synchrotron Grazing Incidence X-Ray Scattering

1991 ◽  
Vol 239 ◽  
Author(s):  
Ramnath Venkatraman ◽  
Paul R. Besser ◽  
Sean Brennan ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Surface Relaxation ◽  
Line Broadening ◽  
X Ray ◽  
Relaxation Effects ◽  
X Ray Scattering ◽  
Ray Scattering

ABSTRACTWe have measured elastic strain distributions with depth as a function of temperature in Al thin films of various thicknesses on oxidized silicon using synchrotron grazing incidence X-ray scattering (GIXS). Disregarding minor surface relaxation effects that depend on the film thickness, it is shown that there are no gross strain gradients in these films in the range of temperatures (between room temperature and 400°C) considered. We also observe X-ray line broadening effects, suggesting an accumulation of dislocations on cooling the films, and their annealing out as the films are reheated.

Growth and Characterization of Chalcopyrite Nanocrystals: Beyond Conventional Thin Films

2007 ◽  
Vol 1012 ◽  
Author(s):  
David Fuertes Marrón ◽  
Sebastian Lehmann ◽  
Justyna Kosk ◽  
Sascha Sadewasser ◽  
Martha Ch. Lux-Steiner
Keyword(s):  
Thin Films ◽  
Material Characterization ◽  
Processing Parameters ◽  
Scanning Probe ◽  
Vapor Liquid Solid ◽  
Embedded Structures ◽  
Solid Substrates ◽  
Growth Method ◽  
Chalcogenide Compound

AbstractA dry method for the growth of highly-structured Cu-containing chalcopyrite material on solid substrates, based on the use of metallic precursors, is described. Nanocrystals, sub-micrometer polycrystalline dots, and macroscopic clusters have be grown, either as isolated units or alternatively as embedded structures in a matrix of a binary chalcogenide compound, by adjusting processing parameters. Vapor-liquid-solid (VLS) induced growth has been used for the growth of chalcopyrite nanowires. Examples of material characterization by scanning probe techniques are shown, demonstrating the suitability of the proposed growth method.

Sign in / Sign up

Export Citation Format

Share Document