scholarly journals Effect of Ga/Cu Ratio on Polycrystalline Thin Film Solar Cell

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
M. M. Islam ◽  
A. Yamada ◽  
T. Sakurai ◽  
S. Ishizuka ◽  
K. Matsubara ◽  
...  

Structural and electrical properties of polycrystalline CuGaSe2 thin films have been studied by changing the Ga/Cu ratio in the films. CuGaSe2 thin films with various Ga/Cu ratio were grown over Mo-coated soda-lime glass substrates. With the increase of Ga content in CuGaSe2, morphology of the films was found to deteriorate which is associated with the smaller grain size and the appearance of impurity phases presumably due to the phase transition from the chalcopyrite structure to the defect-related phase on the surface of the films. Properties of the Ga poor films were affected by the Cu rich secondary phases. Electrical properties of the films were strongly influenced by the structural properties and degraded with increasing the Ga/Cu ratio in the film. Device performances, fabricated with the corresponding CuGaSe2 films, were found to be correlated with the Ga/Cu ratio in the films and consistent with the observed structural and electrical properties.

2015 ◽  
Vol 229 (3) ◽  
Author(s):  
Ganesh L. Agawane ◽  
Seung W. Shin ◽  
Sharadrao A. Vanalakar ◽  
Mahesh P. Suryawanshi ◽  
Annasaheb V. Moholkar ◽  
...  

AbstractThis paper reports the chemical and mechanical stability of Molybdenum (Mo) thin films deposited by direct current magnetron sputtering technique onto soda lime glass substrates. Mo thin films were deposited at various Ar (working) gas pressures to get optimized structural, morphological, adhesive and electrical properties. Mo thin films were further characterized by field emission scanning electron microscope (FE-SEM), X-ray diffraction, Hall measurements and the cross hatch tape test. To study their chemical stability the prepared Mo thin films were further dipped in acetic acid and ammonia solution for 6 h. Mechanical stability of Mo thin films was tested by high speed ultrasonication for an hour. Both the chemical and mechanical stability studies showed that Mo thin films were highly stable since morphology, adhesion and electrical properties did not alter significantly. FE-SEM results showed that the grain size of the chemo-mechano stability tested Mo thin films remained significantly similar with an unimportant effect on the film thickness. Electrical properties showed that electrical resistivity and hall mobility for as-deposited Mo thin films were 2.7 · 10


1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.


2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.


2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
Weimin Li ◽  
Xia Yan ◽  
Armin G. Aberle ◽  
Selvaraj Venkataraj

Molybdenum (Mo) thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS) solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP) deposited bottom layer and a low pressure (LP) deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.


2017 ◽  
Vol 2 (1) ◽  
pp. 54-59 ◽  
Author(s):  
Shih-Fan Chen ◽  
Shea-Jue Wang ◽  
Win-Der Lee ◽  
Ming-Hong Chen ◽  
Chao-Nan Wei ◽  
...  

The back contact electrode with molybdenum (Mo) thin film is crucial to the performance of Cu(In, Ga)Se2 solar cells. In this research, Mo thin films were fabricated by direct current sputtering to attain low-resistivity molybdenum films on soda-lime glass substrates with good adhesion. The films were sputtered onto substrates in 500 nm thickness and nominally held at room temperature with deposition conditions of power and working pressure. Low resistivity (17-25 μΩ∙cm) of bi-layer molybdenum thin films were achieved with combination of top layer films deposited at 300 W with different working pressure, and bottom fixing layer film deposited at 300 W with 2.5 mTorr which adhered well on glass. Films were characterized the electrical properties, structure, residual stress, morphology by using the Hall-effect Measurement, X-ray Diffraction, and Field-Emission Scanning Electron Microscopy, respectively, to optimize the deposition conditions.


2003 ◽  
Vol 763 ◽  
Author(s):  
S. Nishiwaki ◽  
S. Siebentritt ◽  
M. Ch. Lux-Steiner

AbstractCu-Ga-Se films with an orderd vacancy compound (OVC) structure were prepared at substrate temperature about 500 °C by thermal co-deposition. With a preparation under extremely Se excess condition, films of the OVC were synthesized within the compositional ratio of 0.73 ≤ [Ga]/([Cu]+[Ga]) ≤ 0.86 along Cu2Se-Ga2Se3 pseudo binary system. The growth on soda-lime glass substrates improves the crystallinity compared to that on alkali-free glass. An increase in the optical bandgaps of OVC films from 1.85 eV to 1.94 eV was observed with an increase in the Ga content of the films. The deposition of Cu and Se onto Ga2Se3 films resulted in a vertically inhomogeneous film: the bottom layer with the OVC structure and the top layer with the chalcopyrite structure. A solar cell using the CuGa5.0Se8.1 film within a ZnO/CdS/CuGa-Se/Mo/soda-lime glass substrate structure showed an open circuit voltage of 947 mV, an efficiency of 2.2 %, a short circuit current density of 4.5 mA/cm2, and a fill factor of 0.52 (Air Mass 1.5, 0.5 cm2, total area).


1996 ◽  
Vol 436 ◽  
Author(s):  
C. R. Ottermann ◽  
K. Bange ◽  
A. Braband ◽  
H. Haefke ◽  
W. Gutmannsbauer

AbstractAdhesion failures of Ti2 and Ta2O5 thin films deposited by reactive evaporation (RE), reactive ion plating (IP) and plasma impulse chemical vapour deposition (PICVD) on fused silica, AF 45, TEMPAX and soda-lime glass substrates are investigated by means of a micro-scratch tester. The oxide films possess thickness between 60 and 500 nm and show different mass densities depending on the deposition conditions. Scratch testing exhibits well pronounced detachment for thicker films on hard substrates. The clearance of the scratch signal is reduced with decreasing layer thickness or for softer substrate materials. The test results are also influenced by the various substrates and different chemical and mechanical properties of the films due to the alternate deposition techniques.


2014 ◽  
Vol 1603 ◽  
Author(s):  
Yong Yan ◽  
Shasha Li ◽  
Zhou Yu ◽  
Yong Zhang ◽  
Yong Zhao

ABSTRACTCu2ZnSnSe4 films were deposited on soda lime glass substrates at room temperature by one-step radio frequency magnetron-sputtering process. The effect of sputtering power on the properties of one-step deposited Cu2ZnSnSe4 thin films has been investigated. The deposited films might be suitable for the absorber layers in the solar cells. The chemical composition and the preferred orientation of the films can be optimized by the sputtering power.


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