Investigations on Chemo-Mechano Stabilities of the Molybdenum Thin Films Deposited by DC-Sputter Technique

2015 ◽  
Vol 229 (3) ◽  
Author(s):  
Ganesh L. Agawane ◽  
Seung W. Shin ◽  
Sharadrao A. Vanalakar ◽  
Mahesh P. Suryawanshi ◽  
Annasaheb V. Moholkar ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
High Speed ◽  
Mechanical Stability ◽  
Soda Lime ◽  
Ammonia Solution ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Gas Pressures

AbstractThis paper reports the chemical and mechanical stability of Molybdenum (Mo) thin films deposited by direct current magnetron sputtering technique onto soda lime glass substrates. Mo thin films were deposited at various Ar (working) gas pressures to get optimized structural, morphological, adhesive and electrical properties. Mo thin films were further characterized by field emission scanning electron microscope (FE-SEM), X-ray diffraction, Hall measurements and the cross hatch tape test. To study their chemical stability the prepared Mo thin films were further dipped in acetic acid and ammonia solution for 6 h. Mechanical stability of Mo thin films was tested by high speed ultrasonication for an hour. Both the chemical and mechanical stability studies showed that Mo thin films were highly stable since morphology, adhesion and electrical properties did not alter significantly. FE-SEM results showed that the grain size of the chemo-mechano stability tested Mo thin films remained significantly similar with an unimportant effect on the film thickness. Electrical properties showed that electrical resistivity and hall mobility for as-deposited Mo thin films were 2.7 · 10

scholarly journals Preparation and Characterization of Molybdenum Thin Films by Direct-Current Magnetron Sputtering

2017 ◽  
Vol 2 (1) ◽  
pp. 54-59 ◽  
Author(s):  
Shih-Fan Chen ◽  
Shea-Jue Wang ◽  
Win-Der Lee ◽  
Ming-Hong Chen ◽  
Chao-Nan Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Direct Current ◽  
Hall Effect Measurement ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Low Resistivity ◽  
Glass Substrates ◽  
Deposition Conditions

The back contact electrode with molybdenum (Mo) thin film is crucial to the performance of Cu(In, Ga)Se2 solar cells. In this research, Mo thin films were fabricated by direct current sputtering to attain low-resistivity molybdenum films on soda-lime glass substrates with good adhesion. The films were sputtered onto substrates in 500 nm thickness and nominally held at room temperature with deposition conditions of power and working pressure. Low resistivity (17-25 μΩ∙cm) of bi-layer molybdenum thin films were achieved with combination of top layer films deposited at 300 W with different working pressure, and bottom fixing layer film deposited at 300 W with 2.5 mTorr which adhered well on glass. Films were characterized the electrical properties, structure, residual stress, morphology by using the Hall-effect Measurement, X-ray Diffraction, and Field-Emission Scanning Electron Microscopy, respectively, to optimize the deposition conditions.

Preparation of TiFe thin Films by Pulsed Ion Beam Evaporation

2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulse Width ◽  
Ion Beam ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
A Current

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.

scholarly journals Effect of Ga/Cu Ratio on Polycrystalline Thin Film Solar Cell

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
M. M. Islam ◽  
A. Yamada ◽  
T. Sakurai ◽  
S. Ishizuka ◽  
K. Matsubara ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Soda Lime ◽  
Chalcopyrite Structure ◽  
Soda Lime Glass ◽  
Secondary Phases ◽  
Polycrystalline Thin Film ◽  
Glass Substrates ◽  
Structural And Electrical Properties ◽  
Related Phase

Structural and electrical properties of polycrystalline CuGaSe2 thin films have been studied by changing the Ga/Cu ratio in the films. CuGaSe2 thin films with various Ga/Cu ratio were grown over Mo-coated soda-lime glass substrates. With the increase of Ga content in CuGaSe2, morphology of the films was found to deteriorate which is associated with the smaller grain size and the appearance of impurity phases presumably due to the phase transition from the chalcopyrite structure to the defect-related phase on the surface of the films. Properties of the Ga poor films were affected by the Cu rich secondary phases. Electrical properties of the films were strongly influenced by the structural properties and degraded with increasing the Ga/Cu ratio in the film. Device performances, fabricated with the corresponding CuGaSe2 films, were found to be correlated with the Ga/Cu ratio in the films and consistent with the observed structural and electrical properties.

scholarly journals ZnO:Al Grown by Sputtering from Two Different Target Sources: A Comparison Study

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Abdalla A. Alnajjar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Transparent Conductive Oxide ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ceramic Targets

Al-doped ZnO thin films were deposited from two different targets. Ceramic targets were used in RF magnetron sputtering, whereas pulsed magnetron sputtering was used to grow films from powder targets. ZnO:Al films with different thicknesses were sputtered directly on soda-lime glass substrates. The film thickness was in the 0.04–2.0 μm range. The microstructure, such as the grain size and the texture, of the two differently grown ZnO:Al transparent conductive oxide films of different thickness, was studied using X-ray diffractionθ/2θscans. The optical properties, such as the transmittance and reflectance, were measured using a UV-Vis-NIR spectrometer. Further, the sheet resistance, resistivity, carrier concentration, and Hall mobility of these ZnO:Al thin films were measured as a function of film thickness. These results obtained from the two different deposition techniques were compared and contrasted.

scholarly journals Synthesis and Characterization of System In(O,OH)S/i-ZnO/n+-ZnO

2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
William Vallejo ◽  
Carlos Diaz-Uribe ◽  
G. Gordillo
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Visible Radiation ◽  
Soda Lime Glass Substrate ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Cbd Method

In this work, we fabricated system In(O,OH)S/i-ZnO/n+-ZnO to be used as potential optical window in thin films solar cells. i-ZnO/n+-ZnO thin films were synthesized by reactive evaporation (RE) method and In(O,OH)S thin films were synthesized by chemical bath deposition (CBD) method; all thin films were deposited on soda lime glass substrates. Thin films were characterized through X-ray diffraction (XRD), atomic force microscopy (AFM), and spectral transmittance measurements. Structural results indicated that both thin films were polycrystalline; furthermore, morphological results indicated that both thin films coated uniformly soda lime glass substrate; besides, optical characterization indicated that system had more than 80% of visible radiation transmittance.

FABRICATION AND CHARACTERIZATION OF CuInSe2 THIN FILMS GROWN BY MEANS OF A TWO-STAGE PROCESS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1671-1674
Author(s):  
G. GORDILLO ◽  
F. LANDAZÁBAL
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Parameter Study ◽  
X Ray Diffraction ◽  
Two Stage ◽  
Glass Substrates ◽  
Deposition Parameters ◽  
Stage Process

CuInSe 2 thin films were deposited on soda lime glass substrates following a two-stage process which includes a chemical reaction between thin films of Cu and In x Se y, followed by thermal annealing in a Se environment. Initially, the Cu layer is deposited on the glass substrate by DC magnetron sputtering in the S-gun configuration, and subsequently the In x Se y layer is deposited by the closed spaced sublimation (CSS) method. The influence of the deposition method and of the main deposition parameters of the precursor layers (Cu and In x Se y) on the phases present in the resulting compound were studied by means of X-ray diffraction (XRD) and optical gap (Eg) measurements. The conditions for growing CuInSe 2 thin films in the chalcopyrite phase were determined through an exhaustive parameter study. The study revealed that the thickness of the precursor layers and the selenization conditions affect the phase in which the CuInSe 2 compound grows.

Influence of Deposition Time and Source-Substrate Distance on Properties of CdTe Thin Films Using Close-Spaced Sublimation at Higher Source Temperature

2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Near Infrared ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray ◽  
Source Temperature ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Cdte Thin Films

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.

THE INFLUENCE OF SYNTHESIZING TEMPERATURES ON THE PROPERTIES OF THE Cu/Sn/ZnS PRECURSOR THIN FILMS

2015 ◽  
Vol 22 (01) ◽  
pp. 1550009
Author(s):  
YA MING SUN ◽  
DONG LONG ◽  
XIANG CHENG MENG ◽  
ZHONG HUA ◽  
BO LI ◽  
...  
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Wave Band ◽  
X Ray Diffraction ◽  
Sem Images ◽  
Different Temperatures ◽  
Microstructure Morphology ◽  
Uv Visible ◽  
Precursor Thin Film

Cu 2 ZnSnS 4 thin films were prepared on soda-lime glass by sulfurization of the Cu / Sn / ZnS precursors. The microstructure, morphology and optical properties of the films were investigated by X-ray diffraction (XRD), Raman scattering (Raman), scanning electron microscopy (SEM) and UV-visible spectrophotometer (UV-Vis). The SEM images of the precursor and the thin films annealed at different temperatures are very different due to their different surface products. The absorption spectrum shifts to high-wave band region with increasing annealing temperatures. The precursor thin film annealed at 500°C for 2 h forms a single CZTS phase with kesterite structure and the bandgap is estimated to be 1.54 eV.

The Effects of Selenization Temperature on the Properties of CIGS Thin Film Prepared by Cu-In-Ga-Se Precursors

2012 ◽  
Vol 528 ◽  
pp. 214-218
Author(s):  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
Xue Yan Zhang ◽  
Xiao Yu Liu
Keyword(s):  
Thin Films ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
X Ray ◽  
Degree Of Reaction ◽  
N2 Atmosphere ◽  
Cigs Thin Film ◽  
Morphology Of Films ◽  
Selenization Temperature

CIGS thin films were prepared by selenization of Cu-In-Ga-Se precursors, as a new method, the effects of selenization temperature on the properties of CIGS thin films were studied. First, Cu-In-Ga-Se precursors were deposited onto Mo-coated soda lime glass by evaporation and sputtering method. Then, precursors were selenized at various temperatures in N2 atmosphere for 120 min to form CIGS thin films. The degree of reaction and morphology of films as a function of selenization temperature were analyzed. By means of field emission scanning electron microscope (SEM) and X-ray diffraction (XRD), it was found that CIGS thin films selenized at 450°C exhibit chalcopyrite phase with preferred orientation along the (112) plane.

Sign in / Sign up

Export Citation Format

Share Document