Deposition of Nano Fiber ZnO and Zn1-xCdxO Thin Films by a Simple Spray Pyrolysis and Characterizations for Optoelectronic Applications

2012 ◽  
Vol 545 ◽  
pp. 100-104 ◽  
Author(s):  
J. Podder ◽  
M.R Islam

ZnO and Zn1-xCdxO thin films have been deposited onto glass substrate using spray pyrolysis at 200°C. Cadmium-zinc alloy thin films have been prepared by taking different concentrations of cadmium (Cd). The elemental analysis and the surface morphology of the films were carried by the energy dispersive X-ray (EDX) and scanning electron microscopy (SEM). The EDX data show that the films are highly stoichiometric. The SEM images show that the film changes from nano fiber to grain with the increase of Cd concentrations. The X-ray diffraction pattern shows that the films are polycrystalline in nature. The crystal structure of the films changes from hexagonal-ZnO to cubic-CdO depending on the concentration of Zn and Cd in the Zn1-xCdxO films. The optical properties of these films were studied by UV-VIS spectroscopy. The optical band gap of the films was changed from 3.2 to 2.4 with the variation of cadmium.

2011 ◽  
Vol 15 (1) ◽  
pp. 37-42
Author(s):  
T. Mahalingam ◽  
V. Dhanasekaran ◽  
S. Rajendran ◽  
R. Chandramohan ◽  
Luis Ixtlilco ◽  
...  

Electrodeposited CdZnSe thin films have been prepared at various bath temperatures. The thickness of the films was estimated between 850 nm and 1500 nm by stylus method. The X-ray diffraction patterns revealed that the polycrystalline nature with cubic structure of CdZnSe alloy thin films. Microstructural properties such as, crystallite size, dislocation density, microstrain and number of crystallites per unit area were calculated using predominant orientation of the films. SEM images revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. The surface roughness of the film was estimated using topographical studies. Optical properties of the film were analyzed from absorption and transmittance studies. Optical band gap of the films increased from 1.67 to 1.72 eV with the increase of bath temperature from 30 to 90℃. The optical constants (refractive index (n) and extinction coefficient (k)) of CdZnSe thin films were evaluated using optical studies.


1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.


2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.


2017 ◽  
Vol 751 ◽  
pp. 825-830 ◽  
Author(s):  
Phuri Kalnaowakul ◽  
Tonghathai Phairatana ◽  
Aphichart Rodchanarowan

In this study, the photocatalytic properties and morphology of TiO2, ZnO, Ag-graphene-zinc oxide (Ag-G-ZnO) and Ag-graphene-titanium dioxide (Ag-G-TiO2) nanocomposite were compared. The Ag-G-ZnO and Ag-G-TiO2 nanocomposite were successfully prepared by thermal decomposition of colloidal solution. These prepared composites were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Vis spectroscopy and photocatalytic activities. The results from XRD patterns show that Ag-G-TiO2 composites and the Ag-G-ZnO nanocomposites were in the form of fcc and hcp crystal structure, respectively. The SEM images show that at calcination of 500 °C for 3 h, the composite thin film of Ag-G-ZnO and Ag-G-TiO2 were homogenous. In the case of the photocatalytic experiments using methylene blue dye (MB) under UV irradiation, the order of the photocatalytic activities from high to low performances are Ag-G-ZnO, Ag-G-TiO2, ZnO and TiO2, respectively.


2018 ◽  
Vol 32 (19) ◽  
pp. 1840044
Author(s):  
Aditya Dalal ◽  
Animesh Mandal ◽  
Shubhada Adhi ◽  
Kiran Adhi

Aluminum (0.5 at.%)-doped ZnO (AZO) thin films were deposited by pulsed laser deposition technique (PLD) in oxygen ambient of 10[Formula: see text] Torr. The deposited thin films were characterized by x-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and uv–visible spectroscopy (UV–vis). Next, graphene oxide (GO) was synthesized by Hummers method and was characterized by XRD, UV–vis spectroscopy, Raman spectroscopy and transmission electron microscopy (TEM). Thereafter, GO solution was drop-casted on AZO thin films. These films were then characterized by Raman Spectroscopy, UV–vis spectroscopy and PL. Attempt is being made to comprehend the modifications in properties brought about by integration.


1996 ◽  
Vol 441 ◽  
Author(s):  
D. R. Acosta ◽  
E. Zironi ◽  
W. Estrada ◽  
E. Montoya

AbstractFluorine doped tin oxide thin films were prepared from solutions with high fluorine contents using the spray pyrolysis technique; the resulting films were studied by electron and X-ray diffraction methods; the resonant nuclear reaction (RNR) method was used to determine the final concentration of fluorine atoms in our films for different doping levels. Also, electrical and optical properties of SnO2:F films were measured and correlated with deposition and structural parameters obtained from X-Ray diffraction and electron microscopy studies.


2008 ◽  
Vol 43 (21) ◽  
pp. 6848-6852 ◽  
Author(s):  
M. Calixto-Rodriguez ◽  
A. Tiburcio-Silver ◽  
A. Sanchez-Juarez ◽  
M. E. Calixto

2013 ◽  
Vol 652-654 ◽  
pp. 563-566
Author(s):  
Xia Wang ◽  
Chang Cheng Liu ◽  
Zhen Hua Liang ◽  
Gui Hua Peng ◽  
Xiao Bao Han

Hollow spherical CaMoO4:Eu3+, Li+red phosphors have been successfully synthesized by spray pyrolysis method. The crystalline phase, morphology and luminescent properties of the obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence emission spectra (PL). The XRD results demonstrated that all the diffraction peaks of the samples can be well indexed to the tetragonal phase of CaMoO4. The SEM images showed that the particles were composed of hollow spheres, whose diameters are about 1.4 μm. The as-prepared CaMoO4:Eu3+, Li+hollow spheres show a strong red emission corresponding to the5D0-7F2transition of the Eu3+ ions under ultraviolet light.


2014 ◽  
Vol 32 (4) ◽  
pp. 688-695 ◽  
Author(s):  
Munirah Munirah ◽  
Ziaul Khan ◽  
Mohd. Khan ◽  
Anver Aziz

AbstractThis paper describes the growth of Cd doped ZnO thin films on a glass substrate via sol-gel spin coating technique. The effect of Cd doping on ZnO thin films was investigated using X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy, I–V characteristics and field emission scanning electron microscopy (FESEM). X-ray diffraction patterns showed that the films have preferred orientation along (002) plane with hexagonal wurtzite structure. The average crystallite sizes decreased from 24 nm to 9 nm, upon increasing of Cd doping. The films transmittance was found to be very high (92 to 95 %) in the visible region of solar spectrum. The optical band gap of ZnO and Cd doped ZnO thin films was calculated using the transmittance spectra and was found to be in the range of 3.30 to 2.77 eV. On increasing Cd concentration in ZnO binary system, the absorption edge of the films showed the red shifting. Photoluminescence spectra of the films showed the characteristic band edge emission centred over 377 to 448 nm. Electrical characterization revealed that the films had semiconducting and light sensitive behaviour.


2012 ◽  
Vol 534 ◽  
pp. 156-159 ◽  
Author(s):  
Dong Hua Fan ◽  
Rong Zhang ◽  
Hui Ren Peng

Cu2ZnSnS4 (CZTS) thin films are prepared by sulfurizing the precursors deposited by vacuum evaporation methods. The samples sulfurized at 500°C for 3h shows the strong (112) diffraction peak at 28.45˚, suggesting the successful synthesis of CZTS thin films. The X-ray diffraction shows that CZTS thin film prepared in Sn-poor condition have the best crystallinity. The Sn-dependent crystallite size was calculated to be 19.53-21.03 nm. In addition, we found that the optical band gap with various Sn contents can be modulated at 1.48-1.85 eV


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