Influence of partial pressure of oxygen on thermochromic performance of VO2 thin films by RF magnetron sputtering

2019 ◽  
Vol 33 (28) ◽  
pp. 1950349 ◽  
Author(s):  
Pengfei Guo ◽  
Caijuan Liu ◽  
Junhui Liu ◽  
Ruoping Li ◽  
Mingju Huang
Keyword(s):  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Solar Modulation ◽  
Partial Pressure Of Oxygen ◽  
Smart Windows ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Phase Surface ◽  
Vo2 Thin Films

In order to obtain a material with high solar modulation ability [Formula: see text] and crystalline quality, [Formula: see text] films were prepared on quartz glass substrates using RF magnetron sputtering under various oxygen partial pressures. Their phase, surface, transmittance, and film sheet resistance properties were analyzed. As the oxygen partial pressure increased, the luminous transmittance [Formula: see text] of the film increased to as high as 55.6%, while the [Formula: see text] first increased to a maximum of 10.8% and then decreased. This paper is a meaningful aid in the application of [Formula: see text] films to smart windows.

scholarly journals Growth of MoO3 Films by RF Magnetron Sputtering: Studies on the Structural, Optical, and Electrochromic Properties

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
S. Subbarayudu ◽  
V. Madhavi ◽  
S. Uthanna
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Silicon Substrates ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Vibrational Bands ◽  
The Fourier Transform

Molybdenum oxide (MoO3) films were deposited on glass and silicon substrates held at temperature 473 K by RF magnetron sputtering of molybdenum target at various oxygen partial pressures in the range 8×10-5–8×10-4 mbar. The deposited MoO3 films were characterized for their chemical composition, crystallographic structure, surface morphology, chemical binding configuration, and optical properties. The films formed at oxygen partial pressure of 4×10-4 mbar were nearly stoichiometric and nanocrystalline MoO3 with crystallite size of 27 nm. The Fourier transform infrared spectrum of the films formed at 4×10-4 mbar exhibited the characteristics vibrational bands of MoO3. The optical band gap of the films increased from 3.11 to 3.28 eV, and the refractive index increased from 2.04 to 2.16 with the increase of oxygen partial pressure from 8×10-5 to 8×10-4 mbar, respectively. The electrochromic performance of MoO3 films formed on ITO coated glass substrates was studied and achieved the optical modulation of about 13% with color efficiency of about 20 cm2/C.

OXYGEN PARTIAL PRESSURE AND SUBSTRATE BIAS VOLTAGE INFLUENCED STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF RF MAGNETRON SPUTTERED Ag2Cu2O3 FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 653-657 ◽  
Author(s):  
S. UTHANNA ◽  
M. HARI PRASAD REDDY ◽  
J. F. PIERSON
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Bias Voltage ◽  
Single Phase ◽  
Rf Magnetron Sputtering ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Glass Substrates ◽  
Partial Pressures ◽  
20 Nm

Ag2Cu2O3 films were deposited on glass substrates held at 303 K by RF magnetron sputtering of Ag70 Cu30 target at different oxygen partial pressures and substrate bias voltages. Single phase Ag2Cu2O3 films were formed at an oxygen partial pressure of 2 × 10-2 Pa . The films deposited at oxygen partial pressure 2 × 10-2 Pa and substrate bias voltage of -60 V were nanocrystalline with crystallite size of 20 nm, low electrical resistivity of 3.9 Ωcm and optical band gap of 2.02 eV.

scholarly journals Structural, Electrical, and Optical Properties of Reactively Sputtered Ag-Cu-O Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna
Keyword(s):  
Optical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Crystallographic Structure ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Partial Pressures ◽  
Effect Of Oxygen

Thin films of silver-copper-oxide were deposited on glass substrates by RF magnetron sputtering of Ag80Cu20 target under various oxygen partial pressures in the range 5×10−3–8×10−2 Pa. The effect of oxygen partial pressure on the crystallographic structure and surface morphology and electrical and optical properties was systematically studied and the results were reported. The oxygen content in the films was correlated with the oxygen partial pressure maintained during the growth of the films. The films which formed at low oxygen partial pressure of 5×10−3 Pa were mixed in phase of Ag2Cu2O3 and Ag while those deposited at 2×10−2 Pa were grown with Ag2Cu2O3 and Ag2Cu2O4 phases. The films which formed at oxygen partial pressure of 2×10−2 Pa showed electrical resistivity of 2.3 Ωcm and optical band gap of 1.47 eV.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Electrical and Optical Properties of Indium and Aluminium Doped Zinc Oxide Films Prepared by RF Magnetron Sputtering

2011 ◽  
Vol 194-196 ◽  
pp. 2272-2275 ◽  
Author(s):  
Lu Ting Yan ◽  
Jatin Rath ◽  
Rudd Schropp
Keyword(s):  
Magnetron Sputtering ◽  
Elevated Temperatures ◽  
Light Transmission ◽  
Rf Magnetron Sputtering ◽  
Electrical And Optical Properties ◽  
Heater Temperature ◽  
Glass Substrates ◽  
Zinc Oxide Films ◽  
Corning Glass ◽  
Different Temperatures

ZnO: In (IZO, 10wt % In2O3) and ZnO: Al (AZO, 1wt % Al2O3) films were deposited on Corning glass substrates by RF magnetron sputtering. The samples were either prepared on unheated substrates and post annealed in N2 at different temperatures, or prepared at elevated temperatures. Electrical, optical and structural properties were investigated as a function of deposition temperature and annealing temperature. Increasing the substrate heater temperature would lead to a decline in the electrical conductivity of IZO films, while AZO films showed unchanged performance in the substrate heater temperature range of 150 - 300°C. Post annealing appears to be an effective way to improve the electrical properties of both IZO and AZO films without sacrificing transparency. In this work, AZO films have higher conductivity and light transmission than IZO films.

scholarly journals Nitrogen Assimilation and Transport by Ex Planta Nitrogen-Fixing Bradyrhizobium diazoefficiens Bacteroids Is Modulated by Oxygen, Bacteroid Density and l-Malate

2020 ◽  
Vol 21 (20) ◽  
pp. 7542
Author(s):  
James K. Waters ◽  
Thomas P. Mawhinney ◽  
David W. Emerich
Keyword(s):  
Amino Acid ◽  
Partial Pressure ◽  
Chemical Nature ◽  
Glutamate Uptake ◽  
Ammonium Uptake ◽  
Acid Excretion ◽  
Partial Pressure Of Oxygen ◽  
Partial Pressures ◽  
Branch Chain Amino ◽  
Rate Limiting

Symbiotic nitrogen fixation requires the transfer of fixed organic nitrogen compounds from the symbiotic bacteria to a host plant, yet the chemical nature of the compounds is in question. Bradyrhizobium diazoefficiens bacteroids were isolated anaerobically from soybean nodules and assayed at varying densities, varying partial pressures of oxygen, and varying levels of l-malate. Ammonium was released at low bacteroid densities and high partial pressures of oxygen, but was apparently taken up at high bacteroid densities and low partial pressures of oxygen in the presence of l-malate; these later conditions were optimal for amino acid excretion. The ratio of partial pressure of oxygen/bacteroid density of apparent ammonium uptake and of alanine excretion displayed an inverse relationship. Ammonium uptake, alanine and branch chain amino acid release were all dependent on the concentration of l-malate displaying similar K0.5 values of 0.5 mM demonstrating concerted regulation. The hyperbolic kinetics of ammonium uptake and amino acid excretion suggests transport via a membrane carrier and also suggested that transport was rate limiting. Glutamate uptake displayed exponential kinetics implying transport via a channel. The chemical nature of the compounds released were dependent upon bacteroid density, partial pressure of oxygen and concentration of l-malate demonstrating an integrated metabolism.

scholarly journals Process-Parameter-Dependent Structural, Electrical, and Optical Properties of Reactive Magnetron Sputtered Ag-Cu-O Films

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
P. Narayana Reddy ◽  
A. Sreedhar ◽  
M. Hari Prasad Reddy ◽  
S. Uthanna ◽  
J. F. Pierson
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rf Magnetron Sputtering ◽  
Low Oxygen ◽  
Electrical And Optical Properties ◽  
Partial Pressures ◽  
Effect Of Oxygen ◽  
Parameter Dependent

Silver-copper-oxide thin films were formed by RF magnetron sputtering technique using Ag80Cu20target at various oxygen partial pressures in the range 5 × 10−3–8 ×10−2 Pa and substrate temperatures in the range 303–523 K. The effect of oxygen partial pressure and substrate temperature on the structure and surface morphology and electrical and optical properties of the films were studied. The Ag-Cu-O films formed at room temperature (303 K) and at low oxygen partial pressure of 5 × 10−3 Pa were mixed phase of Ag2Cu2O3and Ag, while those deposited at 2 × 10−2 Pa were composed of Ag2Cu2O4and Ag2Cu2O3phases. The crystallinity of the films formed at oxygen partial pressure of 2 × 10−2Pa increased with the increase of substrate temperature from 303 to 423 K. Further increase of substrate temperature to 523 K, the films were decomposed in to Ag2O and Ag phases. The electrical resistivity of the films decreased from 0.8 Ωcm with the increase of substrate temperature from 303 to 473 K due to improvement in the crystallinity of the phase. The optical band gap of the Ag-Cu-O films increased from 1.47 to 1.83 eV with the increase of substrate temperature from 303 to 473 K.

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