scholarly journals Operational Simulation of LC Ladder Filter Using VDTA

2017 ◽  
Vol 2017 ◽  
pp. 1-8
Author(s):  
Praveen Kumar ◽  
Neeta Pandey ◽  
Sajal Kumar Paul
Keyword(s):  
Experimental Verification ◽  
Close Agreement ◽  
Systematic Approach ◽  
Cmos Technology ◽  
Experimental Results ◽  
Pspice Simulation ◽  
Filter Structure ◽  
Transconductance Amplifier ◽  
Theoretical Predictions

In this paper, a systematic approach for implementing operational simulation of LC ladder filter using voltage differencing transconductance amplifier is presented. The proposed filter structure uses only grounded capacitor and possesses electronic tunability. PSPICE simulation using 180 nm CMOS technology parameter is carried out to verify the functionality of the presented approach. Experimental verification is also performed through commercially available IC LM13700/NS. Simulations and experimental results are found to be in close agreement with theoretical predictions.

Minimum Component All Pass Filters Using a New Versatile Active Element

2019 ◽  
Vol 29 (05) ◽  
pp. 2050078 ◽  
Author(s):  
Mohammad Faseehuddin ◽  
Jahariah Sampe ◽  
Sadia Shireen ◽  
Sawal Hamid Md Ali
Keyword(s):  
Integrated Circuits ◽  
Fourth Order ◽  
Active Element ◽  
Cmos Technology ◽  
Current Conveyor ◽  
Experimental Results ◽  
Pass Filter ◽  
Differential Input ◽  
Filter Structure ◽  
Transconductance Amplifier

In this paper, a new active element namely Dual-X current conveyor differential input transconductance amplifier (DXCCDITA) is proposed. The DXCCDITA is utilized in designing four minimum component fully cascadable all pass filter (APF) structures. The designed all pass filters require only single active element and one/two passive elements for realization thus making them a minimum component implementation. Two among the four presented all pass structures require only a single capacitor for implementation. A scheme for realizing nth order all pass filter is also suggested and a fourth order voltage mode (VM) filter is developed from the proposed scheme. The effect of non-idealities on the proposed all pass filters is also studied. A simple oscillator is also developed using one of the all pass filter structure. The oscillator required only one DXCCDITA, two capacitors and one resistor for implementation. The DXCCDITA is implemented in 0.35[Formula: see text][Formula: see text]m TSMC CMOS technology parameters and tested in Tanner EDA. Sufficient numbers of simulations are provided to establish the functionality of all pass structures. The experimental results using commercially available integrated circuits (ICs) are also provided.

scholarly journals Classical quantum mechanics – particle is the pulse of matter waves

2020 ◽  
Vol 5 (4) ◽  
Author(s):  
Dimosthenis Michopoulos
Keyword(s):  
Quantum Mechanics ◽  
Experimental Verification ◽  
Experimental Results ◽  
Classical Physics ◽  
Matter Waves ◽  
Theoretical Predictions ◽  
Classical Quantum ◽  
New Interpretation

Since the very first development of Quantum Mechanics there are many scientists who, despite the fact that everything seems to work perfectly and the experimental results verify the theoretical predictions, do not understand what is really going on. That is why there are many different interpretations of this subject nowadays. This paper provides a new interpretation, aiming to illustrate the fact that Quantum Mechanics is actually an extension of Classical Physics, and in contrast to other interpretations we illustrate a possible experimental verification of theoretical wording.

scholarly journals CMOS CDBA-Based Inverse Filter Structure

2020 ◽  
Vol 9 (3) ◽  
pp. 2226-2231
Keyword(s):  
Cmos Technology ◽  
Experimental Results ◽  
Band Pass Filter ◽  
Inverse Filter ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Filter Structure ◽  
Low Pass ◽  
Band Pass ◽  
High Pass

This paper presents a voltage-mode(VM) tunable multifunction inverse filter configuration employing current differencing buffered amplifiers (CDBA). The presented structure utilizes two CDBAs, two/three capacitors and four/five resistors to realize inverse low pass filter (ILPF), inverse high pass filter (IHPF), inverse band pass filter (IBPF), and inverse band reject filter(IBRF) from the same circuit topology by suitable selection(s) of the branch admittances(s). PSPICE simulations have been performed with 0.18µm TSMC CMOS technology to validate the theory. Some sample experimental results have also been provided using off-the-shelf IC AD844 based CDBA.

Memristor Emulator Circuit Using Multiple-Output OTA and Its Experimental Results

2019 ◽  
Vol 28 (10) ◽  
pp. 1950166 ◽  
Author(s):  
Rajeev Kumar Ranjan ◽  
Pankaj Kumar Sharma ◽  
Sagar ◽  
Niranjan Raj ◽  
Bharti Kumari ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Experimental Results ◽  
Active Device ◽  
Pass Filter ◽  
Transconductance Amplifier ◽  
Pinched Hysteresis Loop ◽  
A Charge ◽  
Memristor Emulator ◽  
High Pass ◽  
Pinched Hysteresis

A charge-controlled memristor emulator circuit based on one kind of active device [operational transconductance amplifier (OTA)] using CMOS technology is introduced in this paper. The proposed circuit can be configured in both incremental and decremental types by using a simple switch. The memristor behavior can be electronically tuned by adjusting the transconductance of the OTAs. By changing the value of the capacitor, the pinched hysteresis loop observed in the current versus voltage plane can be held at higher frequencies. The proposed emulator circuit functions well up to 500 kHz. The experiment has been performed using commercially available OTA ICs (CA3080). The experimental demonstration has been carried out for 10, 20 and 120[Formula: see text]kHz. A simple high-pass filter is explained in both configurations to demonstrate the functionality of the proposed memristor emulator. The proposed circuit has been simulated in PSPICE using 0.5-[Formula: see text]m CMOS parameter. The simulated and experimental results validate the theoretical proposition.

scholarly journals MOCCCDTA-based Current Mode Tunable Universal Biquad Filter for Bluetooth Applications

2016 ◽  
Vol 6 (4) ◽  
pp. 1499
Author(s):  
Jyoti Sharma ◽  
Shantanu Chakraborty
Keyword(s):  
Active Element ◽  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Biquad Filter ◽  
Transconductance Amplifier ◽  
Theoretical Predictions ◽  
Current Differencing Transconductance Amplifier ◽  
Mode Technique

<p>In the last decade, there has been much effort to reduce the supply voltage of electronic circuits due to the demand for portable and battery-powered equipment. Since a low-voltage operating circuit becomes necessary, the current-mode technique is ideally suited for this purpose more than the voltage-mode one. In this paper, performance of multi output current controlled current differencing transconductance amplifier (MOCCCDTA) is evaluated using 180nm, 90nm and 45nm CMOS technology. It is found that the 45nm CMOS-based<br />MOCCCDTA provides highest frequency i.e. 33GHz. Further a Universal biquad filter has been designed using a single MOCCCDTA as an active element and two capacitors. Filter offers high frequency in GHz. Tunability of all the filter outputs with respect to a bias current has been analyzed. The tunability of the filter circuit for Bluetooth applications is also shown in this work. The performances of MOCCCDTA circuit and Universal biquad filter are illustrated by HSPICE. The simulation results are found to be in agreement with the theoretical predictions.</p>

MOCCCDTA-based Current Mode Tunable Universal Biquad Filter for Bluetooth Applications

2016 ◽  
Vol 6 (4) ◽  
pp. 1499
Author(s):  
Jyoti Sharma ◽  
Shantanu Chakraborty
Keyword(s):  
Active Element ◽  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Biquad Filter ◽  
Transconductance Amplifier ◽  
Theoretical Predictions ◽  
Current Differencing Transconductance Amplifier ◽  
Mode Technique

<p>In the last decade, there has been much effort to reduce the supply voltage of electronic circuits due to the demand for portable and battery-powered equipment. Since a low-voltage operating circuit becomes necessary, the current-mode technique is ideally suited for this purpose more than the voltage-mode one. In this paper, performance of multi output current controlled current differencing transconductance amplifier (MOCCCDTA) is evaluated using 180nm, 90nm and 45nm CMOS technology. It is found that the 45nm CMOS-based<br />MOCCCDTA provides highest frequency i.e. 33GHz. Further a Universal biquad filter has been designed using a single MOCCCDTA as an active element and two capacitors. Filter offers high frequency in GHz. Tunability of all the filter outputs with respect to a bias current has been analyzed. The tunability of the filter circuit for Bluetooth applications is also shown in this work. The performances of MOCCCDTA circuit and Universal biquad filter are illustrated by HSPICE. The simulation results are found to be in agreement with the theoretical predictions.</p>

scholarly journals Quantitative Experimental and Theoretical Investigations on the Interaction of Shock Waves with Magnetic Fields

1969 ◽  
Vol 24 (10) ◽  
pp. 1449-1457
Author(s):  
H. Klingenberg ◽  
F. Sardei ◽  
W. Zimmermann
Keyword(s):  
Magnetic Fields ◽  
Shock Waves ◽  
Physical Model ◽  
Spectroscopic Method ◽  
Experimental Results ◽  
Dimensional Theory ◽  
One Dimensional ◽  
Theoretical Investigations ◽  
Theoretical Predictions ◽  
Interaction Of Shock Waves

Abstract In continuation of the work on interaction between shock waves and magnetic fields 1,2 the experiments reported here measured the atomic and electron densities in the interaction region by means of an interferometric and a spectroscopic method. The transient atomic density was also calculated using a one-dimensional theory based on the work of Johnson3 , but modified to give an improved physical model. The experimental results were compared with the theoretical predictions.

scholarly journals Experimental study of the $ \gamma p \rightarrow K^{0}\Sigma^{+}$, $ \gamma n \rightarrow K^{0} \Lambda$, and $ \gamma n \rightarrow K^{0} \Sigma^{0}$ reactions at the Mainz Microtron

2019 ◽  
Vol 55 (11) ◽  
Author(s):  
C. S. Akondi ◽  
K. Bantawa ◽  
D. M. Manley ◽  
S. Abt ◽  
P. Achenbach ◽  
...  
Keyword(s):  
Experimental Study ◽  
Cross Sections ◽  
Differential Cross ◽  
Legendre Polynomials ◽  
Neutral Kaon ◽  
Experimental Results ◽  
Differential Cross Sections ◽  
Theoretical Predictions ◽  
Photoproduction Reactions ◽  
Insight Into

Abstract.This work measured $ \mathrm{d}\sigma/\mathrm{d}\Omega$dσ/dΩ for neutral kaon photoproduction reactions from threshold up to a c.m. energy of 1855MeV, focussing specifically on the $ \gamma p\rightarrow K^0\Sigma^+$γp→K0Σ+, $ \gamma n\rightarrow K^0\Lambda$γn→K0Λ, and $ \gamma n\rightarrow K^0 \Sigma^0$γn→K0Σ0 reactions. Our results for $ \gamma n\rightarrow K^0 \Sigma^0$γn→K0Σ0 are the first-ever measurements for that reaction. These data will provide insight into the properties of $ N^{\ast}$N* resonances and, in particular, will lead to an improved knowledge about those states that couple only weakly to the $ \pi N$πN channel. Integrated cross sections were extracted by fitting the differential cross sections for each reaction as a series of Legendre polynomials and our results are compared with prior experimental results and theoretical predictions.

Sign in / Sign up

Export Citation Format

Share Document