scholarly journals MOCCCDTA-based Current Mode Tunable Universal Biquad Filter for Bluetooth Applications

2016 ◽  
Vol 6 (4) ◽  
pp. 1499
Author(s):  
Jyoti Sharma ◽  
Shantanu Chakraborty
Keyword(s):  
Active Element ◽  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Biquad Filter ◽  
Transconductance Amplifier ◽  
Theoretical Predictions ◽  
Current Differencing Transconductance Amplifier ◽  
Mode Technique

<p>In the last decade, there has been much effort to reduce the supply voltage of electronic circuits due to the demand for portable and battery-powered equipment. Since a low-voltage operating circuit becomes necessary, the current-mode technique is ideally suited for this purpose more than the voltage-mode one. In this paper, performance of multi output current controlled current differencing transconductance amplifier (MOCCCDTA) is evaluated using 180nm, 90nm and 45nm CMOS technology. It is found that the 45nm CMOS-based<br />MOCCCDTA provides highest frequency i.e. 33GHz. Further a Universal biquad filter has been designed using a single MOCCCDTA as an active element and two capacitors. Filter offers high frequency in GHz. Tunability of all the filter outputs with respect to a bias current has been analyzed. The tunability of the filter circuit for Bluetooth applications is also shown in this work. The performances of MOCCCDTA circuit and Universal biquad filter are illustrated by HSPICE. The simulation results are found to be in agreement with the theoretical predictions.</p>

MOCCCDTA-based Current Mode Tunable Universal Biquad Filter for Bluetooth Applications

2016 ◽  
Vol 6 (4) ◽  
pp. 1499
Author(s):  
Jyoti Sharma ◽  
Shantanu Chakraborty
Keyword(s):  
Active Element ◽  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Biquad Filter ◽  
Transconductance Amplifier ◽  
Theoretical Predictions ◽  
Current Differencing Transconductance Amplifier ◽  
Mode Technique

<p>In the last decade, there has been much effort to reduce the supply voltage of electronic circuits due to the demand for portable and battery-powered equipment. Since a low-voltage operating circuit becomes necessary, the current-mode technique is ideally suited for this purpose more than the voltage-mode one. In this paper, performance of multi output current controlled current differencing transconductance amplifier (MOCCCDTA) is evaluated using 180nm, 90nm and 45nm CMOS technology. It is found that the 45nm CMOS-based<br />MOCCCDTA provides highest frequency i.e. 33GHz. Further a Universal biquad filter has been designed using a single MOCCCDTA as an active element and two capacitors. Filter offers high frequency in GHz. Tunability of all the filter outputs with respect to a bias current has been analyzed. The tunability of the filter circuit for Bluetooth applications is also shown in this work. The performances of MOCCCDTA circuit and Universal biquad filter are illustrated by HSPICE. The simulation results are found to be in agreement with the theoretical predictions.</p>

scholarly journals Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Speed ◽  
Low Voltage ◽  
Supply Voltage ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Current Mode ◽  
Cmos Technology ◽  
Oxide Semiconductor

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.

scholarly journals Gm-Realization of Controlled-Gain Current Follower Transconductance Amplifier

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Worapong Tangsrirat
Keyword(s):  
Current Mode ◽  
Cmos Technology ◽  
Current Transfer ◽  
Biquad Filter ◽  
Transconductance Amplifier ◽  
Current Follower ◽  
Dc Bias ◽  
Simulation Results ◽  
Supply Voltages ◽  
A Current

This paper describes the conception of the current follower transconductance amplifier (CFTA) with electronically and linearly current tunable. The newly modified element is realized based on the use of transconductance cells (Gms) as core circuits. The advantage of this element is that the current transfer ratios (iz/ipandix/iz) can be tuned electronically and linearly by adjusting external DC bias currents. The circuit is designed and analyzed in 0.35 μm TSMC CMOS technology. Simulation results for the circuit with ±1.25 V supply voltages show that it consumes only 0.43 mw quiescent power with 70 MHz bandwidth. As an application example, a current-mode KHN biquad filter is designed and simulated.

Modified current differencing transconductance amplifier – new versatile active element

2012 ◽  
Vol 60 (4) ◽  
pp. 739-750 ◽  
Author(s):  
A. Malcher
Keyword(s):  
Signal Processing ◽  
Active Element ◽  
Current Mode ◽  
Input Resistance ◽  
Analog Signal ◽  
Output Stage ◽  
Spice Simulation ◽  
Transconductance Amplifier ◽  
Simulation Results ◽  
Current Differencing Transconductance Amplifier

Abstract This paper introduces a new current mode component called Modified Current Differencing Transconductance Amplifier (MCDTA). Important parameters of the circuit i.e. input resistance, z terminal resistance and transconductance of the output stage can be tuned electrically. The circuit can be implemented in linear and non-linear analog signal processing. The paper presents an example of the MCDTA application - a complete quadrature oscillator with the amplitude regulation. The functionality of the example circuit and its tuning capability were proved by the SPICE simulation results.

LOW VOLTAGE, LOW POWER CHEBYSHEV FILTER IN 0.18 μm CMOS TECHNOLOGY

2013 ◽  
Vol 22 (07) ◽  
pp. 1350053 ◽  
Author(s):  
S. REKHA ◽  
T. LAXMINIDHI
Keyword(s):  
Low Power ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Transconductance Amplifier ◽  
Low Pass ◽  
Unity Gain ◽  
Design Centering ◽  
Low Supply Voltage

This paper presents an active-RC continuous time filter in 0.18 μm standard CMOS technology intended to operate on a very low supply voltage of 0.5 V. The filter designed, has a 5th order Chebyshev low pass response with a bandwidth of 477 kHz and 1-dB passband ripple. A low-power operational transconductance amplifier (OTA) is designed which makes the filter realizable. The OTA uses bulk-driven input transistors and feed-forward compensation in order to increase the Dynamic Range and Unity Gain Bandwidth, respectively. The paper also presents an equivalent circuit of the OTA and explains how the filter can be modeled using descriptor state-space equations which will be used for design centering the filter in the presence of parasitics. The designed filter offers a dynamic range of 51.3 dB while consuming a power of 237 μW.

scholarly journals 1.5-V CMOS Current Multiplier/Divider

2018 ◽  
Vol 8 (3) ◽  
pp. 1478 ◽  
Author(s):  
Jetsdaporn Satansup ◽  
Worapong Tangsrirat
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Signal Frequency ◽  
Total Power ◽  
Total Power Consumption ◽  
Linearity Error ◽  
Low Supply Voltage ◽  
Circuit Technique

A circuit technique for designing a compact low-voltage current-mode multiplier/divider circuit in CMOS technology is presented.  It is based on the use of a compact current quadratic cell able to operate at low supply voltage.  The proposed circuit is designed and simulated for implementing in TSMC 0.25-m CMOS technology with a single supply voltage of 1.5 V.  Simulation results using PSPICE, accurately agreement with theoretical ones, have been provided, and also demonstrate a maximum linearity error of 1.5%, a THD less than 2% at 100 MHz, a total power consumption of 508 W, and -3dB small-signal frequency of about 245 MHz.

High Gain and High CMRR Two-Stage Folded Cascode OTA with Nested Miller Compensation

2015 ◽  
Vol 24 (04) ◽  
pp. 1550057 ◽  
Author(s):  
Meysam Akbari ◽  
Omid Hashemipour
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
High Gain ◽  
Open Loop ◽  
Two Stage ◽  
Miller Compensation ◽  
Transconductance Amplifier ◽  
Dc Gain ◽  
Folded Cascode

By using Gm-C compensation (GCC) technique, a two-stage recycling folded cascode (FC) operational transconductance amplifier (OTA) is designed. The proposed configuration consists of recycling structure, positive feedback and feed-forward compensation path. In comparison with the typical folded cascode CMOS Miller amplifier, this design has higher DC gain, unity-gain frequency (UGF), slew rate and common mode rejection ratio (CMRR). The presented OTA is simulated in 0.18-μm CMOS technology and the simulation results confirm the theoretical analyses. Finally, the proposed amplifier has a 111 dB open-loop DC gain, 20 MHz UGF and 145 dB CMRR @ 1.2 V supply voltage while the power consumption is 400 μW which makes it suitable for low-voltage applications.

scholarly journals Ultra-Low-Voltage Low-Power Bulk-Driven Quasi-Floating-Gate Operational Transconductance Amplifier

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Ziad Alsibai ◽  
Salma Bay Abo Dabbous
Keyword(s):  
Signal Processing ◽  
Power Consumption ◽  
Low Power ◽  
Low Voltage ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Bias Current ◽  
Floating Gate ◽  
Operational Transconductance Amplifier ◽  
Transconductance Amplifier

A new ultra-low-voltage (LV) low-power (LP) bulk-driven quasi-floating-gate (BD-QFG) operational transconductance amplifier (OTA) is presented in this paper. The proposed circuit is designed using 0.18 μm CMOS technology. A supply voltage of ±0.3 V and a quiescent bias current of 5 μA are used. The PSpice simulation result shows that the power consumption of the proposed BD-QFG OTA is 13.4 μW. Thus, the circuit is suitable for low-power applications. In order to confirm that the proposed BD-QFG OTA can be used in analog signal processing, a BD-QFG OTA-based diodeless precision rectifier is designed as an example application. This rectifier employs only two BD-QFG OTAs and consumes only 26.8 μW.

scholarly journals A Low-Voltage, Low-Power Reconfigurable Current-Mode Softmax Circuit for Analog Neural Networks

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1004
Author(s):  
Massimo Vatalaro ◽  
Marco Lanuzza ◽  
Felice Crupi ◽  
Tatiana Moposita ◽  
Lionel Trojman ◽  
...  
Keyword(s):  
Low Power ◽  
Modular Design ◽  
Low Voltage ◽  
Supply Voltage ◽  
Current Mode ◽  
Cmos Technology ◽  
Chip Area ◽  
Analog Implementation ◽  
Efficient Option ◽  
P Type

This paper presents a novel low-power low-voltage analog implementation of the softmax function, with electrically adjustable amplitude and slope parameters. We propose a modular design, which can be scaled by the number of inputs (and of corresponding outputs). It is composed of input current–voltage linear converter stages (1st stages), MOSFETs operating in a subthreshold regime implementing the exponential functions (2nd stages), and analog divider stages (3rd stages). Each stage is only composed of p-type MOSFET transistors. Designed in a 0.18 µm CMOS technology (TSMC), the proposed softmax circuit can be operated at a supply voltage of 500 mV. A ten-input/ten-output realization occupies a chip area of 2570 µm2 and consumes only 3 µW of power, representing a very compact and energy-efficient option compared to the corresponding digital implementations.

An Ultra-Low-Voltage Low-Power Current-Mode True RMS-to-DC Converter

2016 ◽  
Vol 25 (06) ◽  
pp. 1650066 ◽  
Author(s):  
Pantre Kompitaya ◽  
Khanittha Kaewdang
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
High Performance ◽  
Dynamic Range ◽  
Low Voltage ◽  
Supply Voltage ◽  
Circuit Complexity ◽  
Current Mode ◽  
Cmos Technology ◽  
Low Supply Voltage

A current-mode CMOS true RMS-to-DC (RMS: root-mean-square) converter with very low voltage and low power is proposed in this paper. The design techniques are based on the implicit computation and translinear principle by using CMOS transistors that operate in the weak inversion region. The circuit can operate for two-quadrant input current with wide input dynamic range (0.4–500[Formula: see text]nA) with an error of less than 1%. Furthermore, its features are very low supply voltage (0.8[Formula: see text]V), very low power consumption ([Formula: see text]0.2[Formula: see text]nW) and low circuit complexity that is suitable for integrated circuits (ICs). The proposed circuit is designed using standard 0.18[Formula: see text][Formula: see text]m CMOS technology and the HSPICE simulation results show the high performance of the circuit and confirm the validity of the proposed design technique.

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